Tohru Nakamura
- Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 67
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- Ga2O3 and related materials 25
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- Semiconductor materials and devices 89
- Advancements in Semiconductor Devices and Circuit Design 43
- Silicon Carbide Semiconductor Technologies 36
- Radio Frequency Integrated Circuit Design 17
- Materials Chemistry top 5%
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- Semiconductor Quantum Structures and Devices 20
- Semiconductor materials and interfaces 16
- Co-authors
- Tomoyoshi MishimaKazuki NomotoNaoki KanedaHuili Grace XingDebdeep JenaZongyang HuWenshen LiHiroshi Ohta
- Cited by
- Condensed Matter PhysicsElectronic, Optical and Magnetic MaterialsElectrical and Electronic Engineering
- Journals
- Applied Physics Letters (5 papers)Journal of Applied Physics (1 paper)Journal of The Electrochemical Society (2 papers)
- Partner nations
- JapanUnited StatesUnited Kingdom
In The Last Decade
Tohru Nakamura
151 papers receiving 2.3k citations
Peers
Comparison fields: 5 of 66
- Condensed Matter Physics 1.3k
- Electronic, Optical and Magnetic Materials 1.1k
- Electrical and Electronic Engineering 1.7k
- Materials Chemistry 763
- Atomic and Molecular Physics, and Optics 462
Countries citing papers authored by Tohru Nakamura
This map shows the geographic impact of Tohru Nakamura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tohru Nakamura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tohru Nakamura more than expected).
Fields of papers citing papers by Tohru Nakamura
This network shows the impact of papers produced by Tohru Nakamura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tohru Nakamura. The network helps show where Tohru Nakamura may publish in the future.
Co-authorship network
The 25 scholars most cited alongside Tohru Nakamura, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2024 | 0 | |
| 2 | 2021 | 5 | |
| 3 | 2020 | 27 | |
| 4 | 2020 | 15 | |
| 5 | 2019 | 5 | |
| 6 | 1.6 kV Vertical Ga 2 O 3 FinFETs With Source-Connected Field Plates and Normally-off Operation | 2019 | 13 |
| 7 | 2018 | 254 | |
| 8 | 2018 | 142 | |
| 9 | 2015 | 4 | |
| 10 | 2014 | 4 | |
| 11 | 2012 | 2 | |
| 12 | STRENGTH MEASUREMENT OF CARBONACEOUS CHONDRITES AND MICROMETEORITES USING MICRO COMPRESSION TESTING MACHINE. A. Tsuchi | 2009 | 8 |
| 13 | 2009 | 0 | |
| 14 | Growth of GaSb single crystal in space | 2001 | 1 |
| 15 | Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors | 1996 | 2 |
| 16 | Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs) | 1996 | 1 |
| 17 | Single Voltage Supply High Efficiency InGaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates | 1995 | 0 |
| 18 | 1995 | 5 | |
| 19 | Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) (Special Issue on Quarter Micron Si Device and Process Technologies) | 1994 | 1 |
| 20 | Sicos - A High Performance Bipolar Structure for VLSI | 1982 | 3 |
About Tohru Nakamura
Tohru Nakamura is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 163 papers that have together received 2.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (89 papers), GaN-based semiconductor devices and materials (67 papers), Advancements in Semiconductor Devices and Circuit Design (43 papers), Silicon Carbide Semiconductor Technologies (36 papers), Ga2O3 and related materials (25 papers), Semiconductor Quantum Structures and Devices (20 papers), Radio Frequency Integrated Circuit Design (17 papers) and Semiconductor materials and interfaces (16 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (1.1k citations) and Electrical and Electronic Engineering (1.7k citations). Tohru Nakamura has collaborated with scholars based in Japan, United States and United Kingdom. Frequent co-authors include Tomoyoshi Mishima, Kazuki Nomoto, Naoki Kaneda, Huili Grace Xing, Debdeep Jena, Zongyang Hu, Wenshen Li, Hiroshi Ohta, Fumimasa Horikiri and Yoshitomo Hatakeyama. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.