J. Ratajczak

1.2k total citations
126 papers, 927 citations indexed

About

J. Ratajczak is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Ratajczak has authored 126 papers receiving a total of 927 indexed citations (citations by other indexed papers that have themselves been cited), including 108 papers in Electrical and Electronic Engineering, 62 papers in Atomic and Molecular Physics, and Optics and 33 papers in Materials Chemistry. Recurrent topics in J. Ratajczak's work include Semiconductor materials and interfaces (31 papers), Semiconductor materials and devices (30 papers) and Semiconductor Quantum Structures and Devices (27 papers). J. Ratajczak is often cited by papers focused on Semiconductor materials and interfaces (31 papers), Semiconductor materials and devices (30 papers) and Semiconductor Quantum Structures and Devices (27 papers). J. Ratajczak collaborates with scholars based in Poland, France and Belgium. J. Ratajczak's co-authors include A. Czerwiński, J. Kątcki, Magdalena Skompska, Agata Skwarek, W. Rzodkiewicz, Paweł Borowicz, M. Wzorek, Nicolas Reckinger, A. Misiuk and Guilhem Larrieu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. Ratajczak

119 papers receiving 890 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Ratajczak Poland 15 685 389 331 132 93 126 927
M. Herrera Spain 15 459 0.7× 346 0.9× 536 1.6× 174 1.3× 35 0.4× 97 964
Byoung‐Ho Cheong South Korea 14 620 0.9× 310 0.8× 488 1.5× 156 1.2× 29 0.3× 41 919
Frédéric Houzé France 18 465 0.7× 365 0.9× 343 1.0× 349 2.6× 121 1.3× 72 964
Shyam Bayya United States 17 654 1.0× 232 0.6× 614 1.9× 192 1.5× 45 0.5× 90 1.1k
Alberto Calloni Italy 19 611 0.9× 294 0.8× 653 2.0× 247 1.9× 45 0.5× 88 1.1k
Jean‐Luc Bubendorff France 21 533 0.8× 379 1.0× 549 1.7× 198 1.5× 50 0.5× 45 1000
H. Schmidt Germany 18 1.1k 1.6× 188 0.5× 536 1.6× 206 1.6× 39 0.4× 44 1.4k
F. Ajustron France 15 484 0.7× 655 1.7× 274 0.8× 271 2.1× 83 0.9× 42 1.0k
Daisuke Nakamura Japan 16 776 1.1× 186 0.5× 420 1.3× 113 0.9× 105 1.1× 72 1.2k
L.J. Balk Germany 16 640 0.9× 372 1.0× 487 1.5× 330 2.5× 41 0.4× 117 1.1k

Countries citing papers authored by J. Ratajczak

Since Specialization
Citations

This map shows the geographic impact of J. Ratajczak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Ratajczak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Ratajczak more than expected).

Fields of papers citing papers by J. Ratajczak

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Ratajczak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Ratajczak. The network helps show where J. Ratajczak may publish in the future.

Co-authorship network of co-authors of J. Ratajczak

This figure shows the co-authorship network connecting the top 25 collaborators of J. Ratajczak. A scholar is included among the top collaborators of J. Ratajczak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Ratajczak. J. Ratajczak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Jasik, A., et al.. (2023). The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays. Metrology and Measurement Systems. 809–819. 1 indexed citations
3.
Kozłowski, Pawel, et al.. (2021). Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing. Materials. 14(21). 6269–6269. 11 indexed citations
4.
Sankowska, Iwona, et al.. (2021). A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping. Materials. 14(17). 4940–4940. 5 indexed citations
5.
Gębski, Marcin, Maciej Dems, J. Muszalski, et al.. (2020). Tuning of reflection spectrum of a monolithic high-contrast grating by variation of its spatial dimensions. Optics Express. 28(14). 20967–20967. 8 indexed citations
6.
Jasik, A., et al.. (2020). On the Study of Dislocation Density in MBE GaSb-Based Structures. Crystals. 10(12). 1074–1074. 1 indexed citations
7.
Jasik, A., et al.. (2019). GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy. Current Applied Physics. 19(4). 542–547. 2 indexed citations
8.
Jasik, A., et al.. (2019). LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE. Crystals. 9(12). 628–628. 2 indexed citations
9.
Jasik, A., Iwona Sankowska, A. Wawro, et al.. (2018). Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system. Applied Physics A. 124(7). 13 indexed citations
10.
Jasik, A., et al.. (2018). Atomically smooth interfaces of type-II InAs/GaSb superlattice on metamorphic GaSb buffer grown in 2D mode on GaAs substrate using MBE. Current Applied Physics. 19(2). 120–127. 14 indexed citations
11.
Ratajczak, J.. (2013). Spectral distributions of halogen and xenon lamps. Pomiary Automatyka Kontrola. 1 indexed citations
12.
Ratajczak, J., et al.. (2013). Examination of spectral distribution of radiation emitted by halogen and xenon lamps. 11. 1 indexed citations
13.
Ratajczak, J., et al.. (2011). Efficiency of multi - source simulators built on a halogen and xenon lamp. Poznan University of Technology Academic Journals Electrical Engineering. 2 indexed citations
14.
Ratajczak, J., et al.. (2010). Comparison of sun simulators designed for tests of collectors and photovoltaic cell. Poznan University of Technology Academic Journals Electrical Engineering. 179–189. 3 indexed citations
15.
Ratajczak, J., et al.. (2010). The review of the light sources helpful for building the sun simulators. Poznan University of Technology Academic Journals Electrical Engineering. 199–208. 5 indexed citations
16.
Czerwiński, A., et al.. (2009). Dependence of cathodoluminescence on layer resistance applied for measurement of thin‐layer sheet resistance. Journal of Microscopy. 237(3). 304–307. 3 indexed citations
17.
Kątcki, J., et al.. (2006). TEM study of PtSi contact layers for low Schottky barrier MOSFETs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 253(1-2). 274–277. 3 indexed citations
18.
Misiuk, A., et al.. (2005). Effect of heat treatment at enhanced pressure on electrical and structural properties of silicon surface layer co-implanted with hydrogen and helium ions. Opto-Electronics Review. 31–34.
19.
Kamińska, E., E. Przeździecka, J. Kossut, et al.. (2005). ZnO-based p-n Junctions with p-type ZnO by ZnTe Oxidation. MRS Proceedings. 891. 1 indexed citations
20.
Tang, Xiaohui, et al.. (2003). Very low Schottky barrier to n-type silicon with PtEr-stack silicide. HAL (Le Centre pour la Communication Scientifique Directe). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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