S. Abermann

821 citations

39 papers · 686 indexed · h-index 16

Condensed Matter Physics top 10%
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 31
- Advancements in Semiconductor Devices and Circuit Design 10
- Ferroelectric and Negative Capacitance Devices 8
- Integrated Circuits and Semiconductor Failure Analysis 6
- Advanced Memory and Neural Computing 5
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides 9
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 9
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 7

Co-authors: E. Bertagnolli Ole Bethge Christoph Henkel G. Strasser G. Pozzovivo J. Kuzmı́k D. Pogány N. Grandjean
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry
Journals: Microelectronic Engineering (4 papers)Applied Physics Letters (3 papers)Journal of The Electrochemical Society (3 papers)
Partner nations: Austria Switzerland Germany

In The Last Decade

S. Abermann

39 papers receiving 664 citations

Peers

Countries citing papers authored by S. Abermann

Since Specialization

Citations

This map shows the geographic impact of S. Abermann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Abermann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Abermann more than expected).

Fields of papers citing papers by S. Abermann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Abermann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Abermann. The network helps show where S. Abermann may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Abermann, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Abermann Line = papers co-authored together S. Abermann links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	ALD Grown Rare-Earth High-k Oxides on Ge: Lowering of the Interface Trap Density and EOT Scalability ECS Transactions ·Ole Bethge,Shu Hsien Li,J Langhagel,Isaque P. de Freitas,S. Abermann,E. Bertagnolli	2014	2
2	ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell Solar Energy Materials and Solar Cells ·Ole Bethge,M. Nobile,S. Abermann,G. Taverna,E. Bertagnolli	2013	24
3	Fabrication of highly ordered nanopillar arrays and defined etching of ALD-grown all-around platinum films Journal of Micromechanics and Microengineering ·Ole Bethge,G. Pozzovivo,Christoph Henkel,S. Abermann,E. Bertagnolli	2012	3
4	Atomic layer deposition temperature dependent minority carrier generation in ZrO2/GeO2/Ge capacitors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Ole Bethge,S. Abermann,Christoph Henkel,J. Smoliner,E. Bertagnolli,Benhur Azambuja Possato,Herbert Hutter	2011	4
5	Electrochemical Growth and Characterization of ZnO Nanorods on ITO Substrates, for Solar Cell Applications EU PVSEC ·Sylvie Mangeney,H. J. Steabben,S. Abermann,Marcus Rennhofer,Johanna Akbarzadeh,Herwig Peterlik,Lourdes Irusta,Peter Ertl,Shokufeh Zamini,H. Brückl	2011	1
6	Layer-by-layer assembly of titania nanoparticles based ionic networks Chemical Communications ·B. Basnar,Marco Litschauer,S. Abermann,E. Bertagnolli,G. Strasser,Marie‐Alexandra Neouze	2010	15
7	Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics Microelectronic Engineering ·Christoph Henkel,S. Abermann,Ole Bethge,G. Pozzovivo,P. Klang,Michael Stöger‐Pollach,E. Bertagnolli	2010	17
8	Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium Applied Surface Science ·S. Abermann,Christoph Henkel,Ole Bethge,G. Pozzovivo,P. Klang,E. Bertagnolli	2010	21
9	Ge p-MOSFETs With Scaled ALD $\hbox{La}_{2} \hbox{O}_{3}/\hbox{ZrO}_{2}$ Gate Dielectrics IEEE Transactions on Electron Devices ·Christoph Henkel,S. Abermann,Ole Bethge,G. Pozzovivo,P. Klang,Manfred Reiche,E. Bertagnolli	2010	18
10	Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO ₂ high- k gate dielectrics Electronics Letters ·S. Abermann,G. Pozzovivo,J. Kuzmı́k,Clemens Ostermaier,Christoph Henkel,Ole Bethge,G. Strasser,D. Pogány,J.‐F. Carlin,N. Grandjean,E. Bertagnolli	2009	16
11	Atomic layer-deposited platinum in high-k/metal gate stacks Semiconductor Science and Technology ·Christoph Henkel,S. Abermann,Ole Bethge,E. Bertagnolli	2009	34
12	Impact of Germanium Surface Conditioning and ALD-growth Temperature on Al[sub 2]O[sub 3]/ZrO[sub 2] High-k Dielectric Stacks Journal of The Electrochemical Society ·Ole Bethge,S. Abermann,Christoph Henkel,Benhur Azambuja Possato,Herbert Hutter,E. Bertagnolli	2009	6
13	Impact of sputter deposited TaN and TiN metal gates on ZrO<inf>2</inf>/Ge and ZrO<inf>2</inf>/Si high-k dielectric gate stacks Christoph Henkel,S. Abermann,Ole Bethge,P. Klang,E. Bertagnolli	2009	2
14	Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$ IEEE Transactions on Electron Devices ·J. Kuzmı́k,浩丸川,S. Abermann,Oluwadamilola Adebayo,M. Gonschorek,E. Feltin,N. Grandjean,E. Bertagnolli,G. Strasser,D. Pogány	2008	86
15	Atomic Layer Deposited Lanthanum-(Zirconate/Aluminate) Based High-K Dielectric Stacks For Future CMOS-Technology ECS Meeting Abstracts ·S. Abermann,Christoph Henkel,Ole Bethge,E. Bertagnolli	2008	1
16	Atomic Layer Deposited Lanthanum-(Zirconate/Aluminate) Based High-K Dielectric Stacks For Future CMOS-Technology ECS Transactions ·S. Abermann,Christoph Henkel,Ole Bethge,E. Bertagnolli	2008	2
17	Process Integration of Pt-Metal-Gate High-k ALD Dielectrics on sSOI Christoph Henkel,S. Abermann,Ole Bethge,Manfred Reiche,E. Bertagnolli	2008	1
18	Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics Microelectronics Reliability ·S. Abermann,J.K. Efavi,A. L. Tataurov,Max C. Lemme,Jörgen Olsson,E. Bertagnolli	2007	8
19	Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-κ dielectric Microelectronic Engineering ·S. Abermann,J.K. Efavi,A. L. Tataurov,Max C. Lemme,Jörgen Olsson,E. Bertagnolli	2007	7
20	Processing and simulation of few nm thick high-κ dielectric films Microelectronic Engineering ·S. Abermann,Christian Jordan,Michael Harasek,E. Bertagnolli	2006	2

About S. Abermann

S. Abermann is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 39 papers that have together received 686 indexed citations. Recurring topics across this work include Semiconductor materials and devices (31 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), Copper Interconnects and Reliability (9 papers), Electronic and Structural Properties of Oxides (9 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Semiconductor materials and interfaces (7 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers) and Advanced Memory and Neural Computing (5 papers). The work is most often cited by research in Condensed Matter Physics (162 citations), Electrical and Electronic Engineering (545 citations), Materials Chemistry (368 citations), Electronic, Optical and Magnetic Materials (122 citations) and Atomic and Molecular Physics, and Optics (124 citations). S. Abermann has collaborated with scholars based in Austria, Switzerland and Germany. Frequent co-authors include E. Bertagnolli, Ole Bethge, Christoph Henkel, G. Strasser, G. Pozzovivo, J. Kuzmı́k, D. Pogány, N. Grandjean, Emil List and Théodoros Dimopoulos. Their work appears in journals such as Microelectronic Engineering, Applied Physics Letters, Journal of The Electrochemical Society, Applied Surface Science and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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