Ole Bethge

1.4k total citations
56 papers, 1.1k citations indexed

About

Ole Bethge is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Ole Bethge has authored 56 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Ole Bethge's work include Semiconductor materials and devices (37 papers), Semiconductor materials and interfaces (13 papers) and Ferroelectric and Negative Capacitance Devices (11 papers). Ole Bethge is often cited by papers focused on Semiconductor materials and devices (37 papers), Semiconductor materials and interfaces (13 papers) and Ferroelectric and Negative Capacitance Devices (11 papers). Ole Bethge collaborates with scholars based in Austria, Germany and Japan. Ole Bethge's co-authors include Thomas Mueller, E. Bertagnolli, Dmitry K. Polyushkin, Stefan Wachter, S. Abermann, Christoph Henkel, Benedikt Schwarz, Simone Schuler, Daniel Schall and Michael Krall and has published in prestigious journals such as Nature Communications, Nano Letters and Applied Physics Letters.

In The Last Decade

Ole Bethge

56 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ole Bethge Austria 17 793 659 247 239 160 56 1.1k
Hau-Vei Han Taiwan 18 636 0.8× 718 1.1× 198 0.8× 160 0.7× 137 0.9× 37 1.1k
Mariano A. Zimmler United States 8 575 0.7× 736 1.1× 493 2.0× 263 1.1× 284 1.8× 9 1.1k
Kuo-Ju Chen Taiwan 15 562 0.7× 546 0.8× 167 0.7× 183 0.8× 130 0.8× 20 922
Eduard Monaico Moldova 15 522 0.7× 707 1.1× 276 1.1× 123 0.5× 181 1.1× 70 887
Maxime Berthe France 17 510 0.6× 569 0.9× 335 1.4× 474 2.0× 64 0.4× 49 930
Mingqiang Bao United States 11 717 0.9× 1.2k 1.8× 413 1.7× 452 1.9× 285 1.8× 19 1.5k
S.P. Wilks United Kingdom 19 730 0.9× 508 0.8× 234 0.9× 333 1.4× 131 0.8× 94 1.0k
Pascal Turban France 16 429 0.5× 456 0.7× 138 0.6× 335 1.4× 191 1.2× 52 847
M. Chudzik United States 17 703 0.9× 326 0.5× 112 0.5× 113 0.5× 115 0.7× 56 957
Sylvia Matzen France 18 923 1.2× 1.3k 1.9× 209 0.8× 218 0.9× 560 3.5× 48 1.6k

Countries citing papers authored by Ole Bethge

Since Specialization
Citations

This map shows the geographic impact of Ole Bethge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ole Bethge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ole Bethge more than expected).

Fields of papers citing papers by Ole Bethge

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ole Bethge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ole Bethge. The network helps show where Ole Bethge may publish in the future.

Co-authorship network of co-authors of Ole Bethge

This figure shows the co-authorship network connecting the top 25 collaborators of Ole Bethge. A scholar is included among the top collaborators of Ole Bethge based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ole Bethge. Ole Bethge is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bethge, Ole, et al.. (2022). Epitaxial Growth of Crystalline CaF2 on Silicene. ACS Applied Materials & Interfaces. 14(28). 32675–32682. 11 indexed citations
2.
Wachter, Stefan, Dmitry K. Polyushkin, Ole Bethge, & Thomas Mueller. (2017). A microprocessor based on a two-dimensional semiconductor. Nature Communications. 8(1). 14948–14948. 320 indexed citations
3.
Zimmermann, Christian, et al.. (2016). Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments. Applied Surface Science. 369. 377–383. 14 indexed citations
4.
Fleury, Clément, Ole Bethge, Clemens Ostermaier, et al.. (2016). Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors. Solid-State Electronics. 125. 118–124. 6 indexed citations
5.
Sticker, Drago, Mario Rothbauer, Verena Charwat, et al.. (2015). Zirconium dioxide nanolayer passivated impedimetric sensors for cell-based assays. Sensors and Actuators B Chemical. 213. 35–44. 22 indexed citations
6.
Melnik, Eva, et al.. (2014). Streptavidin binding as a model to characterize thiol–ene chemistry-based polyamine surfaces for reversible photonic protein biosensing. Chemical Communications. 50(19). 2424–2424. 15 indexed citations
7.
Wanzenboeck, Heinz D., et al.. (2013). Mask‐free prototyping of metal‐oxide‐semiconductor devices utilizing focused electron beam induced deposition. physica status solidi (a). 211(2). 375–381. 11 indexed citations
8.
Bethge, Ole, et al.. (2013). ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell. Solar Energy Materials and Solar Cells. 117(113). 178–182. 24 indexed citations
9.
Ostermaier, Clemens, Christoph Henkel, Ole Bethge, et al.. (2012). Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates. Thin Solid Films. 520(19). 6230–6232. 16 indexed citations
10.
Henkel, Christoph, Per‐Erik Hellström, Mikael Östling, et al.. (2012). Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks. Solid-State Electronics. 74(5). 7–12. 6 indexed citations
11.
Schotter, J., et al.. (2011). Artificial cilia of magnetically tagged polymer nanowires for biomimetic mechanosensing. Bioinspiration & Biomimetics. 6(4). 46007–46007. 16 indexed citations
12.
Bethge, Ole, S. Abermann, Christoph Henkel, et al.. (2011). Atomic layer deposition temperature dependent minority carrier generation in ZrO2/GeO2/Ge capacitors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 01A806–01A806. 4 indexed citations
13.
Du, Van An, A. Sidorenko, Ole Bethge, et al.. (2011). Iron silicide nanoparticles in a SiC/C matrix from organometallic polymers: characterization and magnetic properties. Journal of Materials Chemistry. 21(33). 12232–12232. 14 indexed citations
14.
Henkel, Christoph, S. Abermann, Ole Bethge, et al.. (2010). Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics. Microelectronic Engineering. 88(3). 262–267. 17 indexed citations
15.
Abermann, S., Christoph Henkel, Ole Bethge, et al.. (2010). Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium. Applied Surface Science. 256(16). 5031–5034. 21 indexed citations
16.
Abermann, S., G. Pozzovivo, J. Kuzmı́k, et al.. (2009). Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO 2 high- k gate dielectrics. Electronics Letters. 45(11). 570–572. 16 indexed citations
17.
Henkel, Christoph, S. Abermann, Ole Bethge, & E. Bertagnolli. (2009). Atomic layer-deposited platinum in high-k/metal gate stacks. Semiconductor Science and Technology. 24(12). 125013–125013. 34 indexed citations
18.
Bethge, Ole, et al.. (2009). Tip geometry effects in scanning capacitance microscopy on GaAs Schottky and metal-oxide-semiconductor-type junctions. Journal of Applied Physics. 105(11). 17 indexed citations
19.
Bethge, Ole, et al.. (2009). Impact of Germanium Surface Conditioning and ALD-growth Temperature on Al[sub 2]O[sub 3]/ZrO[sub 2] High-k Dielectric Stacks. Journal of The Electrochemical Society. 156(10). G168–G168. 6 indexed citations
20.
Abermann, S., Christoph Henkel, Ole Bethge, & E. Bertagnolli. (2008). Atomic Layer Deposited Lanthanum-(Zirconate/Aluminate) Based High-K Dielectric Stacks For Future CMOS-Technology. ECS Meeting Abstracts. MA2008-02(25). 1944–1944. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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