D. Martin

2.4k citations

116 papers · 1.9k indexed · h-index 25

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 50
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 70
- Quantum and electron transport phenomena 19
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 19
Structural Biology top 10%
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 22
- Semiconductor Lasers and Optical Devices 17
- Photonic and Optical Devices 11
Materials Chemistry
- ZnO doping and properties 18

Co-authors: N. Grandjean R. Butté F. K. Reinhart Marco Malinverni J.‐F. Carlin Camille Haller U. Marti Gwénolé Jacopin
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters (29 papers)Physical review. B, Condensed matter (10 papers)Journal of Applied Physics (9 papers)
Partner nations: Switzerland France Italy

In The Last Decade

D. Martin

112 papers receiving 1.9k citations

Peers

Countries citing papers authored by D. Martin

Since Specialization

Citations

This map shows the geographic impact of D. Martin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Martin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Martin more than expected).

Fields of papers citing papers by D. Martin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Martin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Martin. The network helps show where D. Martin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Martin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Martin Line = papers co-authored together D. Martin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The crucial role of InAlN for blue and green LDs and SLEDs with low power consumption Г А Токарева,Antonino Castiglia,Marco Rossetti,David Boush,D. Martin,Marcus Duelk,C Velez	2024	0
2	Blue and Green Low Threshold Laser Diodes With InAlN Claddings IEEE Photonics Technology Letters ·Г А Токарева,Antonino Castiglia,Marco Rossetti,David Boush,D. Martin,Marcus Duelk,C Velez	2023	2
3	InAlN cladding implementation in green superluminescent diodes and lasers Applied Physics Letters ·Marco Malinverni,Antonino Castiglia,Marco Rossetti,David Boush,D. Martin,Marcus Duelk,C Velez	2023	4
4	Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes ECS Journal of Solid State Science and Technology ·Hezhi Zhang,W X Ecrh Team at Igvp Stuttgart,D. Martin,宁宁郭,J.‐F. Carlin,R. Butté,N. Grandjean	2019	6
5	Short cavity InGaN-based laser diodes with cavity length below 300 μm Semiconductor Science and Technology ·Hezhi Zhang,W X Ecrh Team at Igvp Stuttgart,D. Martin,宁宁郭,J.‐F. Carlin,R. Butté,N. Grandjean	2019	13
6	GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells Applied Physics Letters ·Camille Haller,J.‐F. Carlin,Gwénolé Jacopin,Wei Liu,D. Martin,R. Butté,N. Grandjean	2018	95
7	Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations Applied Physics Letters ·R. Butté,Lise Lahourcade,Siping Jia,Gordon Callsen,Mounir Mensi,P. Coppolillo,Georg Rossbach,D. Martin,J.‐F. Carlin,S. Marcinkevičius,N. Grandjean	2018	28
8	Impact of surface morphology on the properties of light emission in InGaN epilayers Applied Physics Express ·Siping Jia,S. Marcinkevičius,Mounir Mensi,Lise Lahourcade,J.‐F. Carlin,D. Martin,R. Butté,N. Grandjean	2018	9
9	Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency Applied Physics Letters ·Camille Haller,J.‐F. Carlin,Gwénolé Jacopin,D. Martin,R. Butté,N. Grandjean	2017	104
10	Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN Applied Physics Letters ·Hironori Okumura,D. Martin,N. Grandjean	2016	11
11	Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy Applied Physics Letters ·Hironori Okumura,D. Martin,Marco Malinverni,N. Grandjean	2016	25
12	Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality Applied Physics Letters ·Roger Patrick Mitininno,D. Martin,P. Vennéguès,N. Grandjean,P. de Mierry	2016	8
13	InGaN based micro light emitting diodes featuring a buried GaN tunnel junction Applied Physics Letters ·Marco Malinverni,D. Martin,N. Grandjean	2015	75
14	On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates Journal of Applied Physics ·P. Vennéguès,J.‐M. Chauveau,Z. Bougrioua,Tongtong Zhu,D. Martin,N. Grandjean	2012	22
15	M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy Japanese Journal of Applied Physics ·Ян Цао,D. Martin,N. Grandjean	2009	18
16	a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy Journal of Crystal Growth ·Tongtong Zhu,D. Martin,R. Butté,Kensaku Abe,N. Grandjean	2006	22
17	Surface chemistry and transport effects in GaN hydride vapor phase epitaxy Journal of Crystal Growth ·A.S. Segal,和文龙,S. Yu. Karpov,D. Martin,V. Wagner,M. Ilegems	2004	24
18	Picosecond surface-emitting semiconductor laserwith> 200 mW average power Electronics Letters ·R. Häring,R. Paschotta,E. Gini,F. Morier‐Genoud,D. Martin,H. Melchior,U. Keller	2001	25
19	Extrinsic and intrinsic defects at molecular-beam-epitaxy regrown GaAs interfaces Physica B Condensed Matter ·Nguyen Hong Ky,D. Martin,F. K. Reinhart	1999	1
20	Free-electron laser internal photoemission measurements of heterojunction band discontinuities Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. T. McKinley,R. G. Albridge,Romany Esshak Ghobrial,Akira Ueda,N. H. Tolk,C. Coluzza,F. Gozzo,G. Margaritondo,D. Martin,F. Morier‐Genoud,Charles Dupuy,A. Rudra,M. Ilegems	1993	7

About D. Martin

D. Martin is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Materials Chemistry, having authored 116 papers that have together received 1.9k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (70 papers), GaN-based semiconductor devices and materials (50 papers), Semiconductor materials and devices (22 papers), Quantum and electron transport phenomena (19 papers), Ga2O3 and related materials (19 papers), ZnO doping and properties (18 papers), Semiconductor Lasers and Optical Devices (17 papers) and Photonic and Optical Devices (11 papers). The work is most often cited by research in Condensed Matter Physics (960 citations), Atomic and Molecular Physics, and Optics (1.1k citations), Electronic, Optical and Magnetic Materials (434 citations), Structural Biology (25 citations) and Electrical and Electronic Engineering (1.0k citations). D. Martin has collaborated with scholars based in Switzerland, France and Italy. Frequent co-authors include N. Grandjean, R. Butté, F. K. Reinhart, Marco Malinverni, J.‐F. Carlin, Camille Haller, F. K. Reinhart, U. Marti, Gwénolé Jacopin and A. Dussaigne. Their work appears in journals such as Applied Physics Letters, Physical review. B, Condensed matter, Journal of Applied Physics, Journal of Crystal Growth and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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