Robert M. Farrell

1.3k total citations
24 papers, 1.1k citations indexed

About

Robert M. Farrell is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Robert M. Farrell has authored 24 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 18 papers in Atomic and Molecular Physics, and Optics and 9 papers in Electrical and Electronic Engineering. Recurrent topics in Robert M. Farrell's work include GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (18 papers) and Semiconductor materials and devices (6 papers). Robert M. Farrell is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (18 papers) and Semiconductor materials and devices (6 papers). Robert M. Farrell collaborates with scholars based in United States, France and Japan. Robert M. Farrell's co-authors include James S. Speck, Steven P. DenBaars, Shuji Nakamura, Feng Wu, Erin C. Young, S. Keller, Michael Iza, Umesh K. Mishra, Carl J. Neufeld and Samantha C. Cruz and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

Robert M. Farrell

24 papers receiving 1.1k citations

Peers

Robert M. Farrell
T. Paskova United States
Kathryn M. Kelchner United States
S. F. LeBoeuf United States
C. A. Tran Canada
Robert M. Farrell
Citations per year, relative to Robert M. Farrell Robert M. Farrell (= 1×) peers Akio Kaneta

Countries citing papers authored by Robert M. Farrell

Since Specialization
Citations

This map shows the geographic impact of Robert M. Farrell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert M. Farrell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert M. Farrell more than expected).

Fields of papers citing papers by Robert M. Farrell

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robert M. Farrell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert M. Farrell. The network helps show where Robert M. Farrell may publish in the future.

Co-authorship network of co-authors of Robert M. Farrell

This figure shows the co-authorship network connecting the top 25 collaborators of Robert M. Farrell. A scholar is included among the top collaborators of Robert M. Farrell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Robert M. Farrell. Robert M. Farrell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Oh, Sang Ho, Benjamin P. Yonkee, Michael Cantore, et al.. (2016). Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W. Applied Physics Express. 9(10). 102102–102102. 27 indexed citations
2.
Pynn, Christopher D., Sang Ho Oh, Hazel Gardner, et al.. (2016). Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy. Applied Physics Letters. 109(4). 10 indexed citations
3.
Young, Nathan G., Robert M. Farrell, Sang Ho Oh, et al.. (2016). Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes. Applied Physics Letters. 108(6). 30 indexed citations
4.
Leonard, John T., Benjamin P. Yonkee, Christopher D. Pynn, et al.. (2016). Semipolar (2021) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect. Journal of Crystal Growth. 464. 197–200. 1 indexed citations
5.
Yonkee, Benjamin P., Robert M. Farrell, John T. Leonard, et al.. (2015). Demonstration of low resistance ohmic contacts to p-type (2021) GaN. Semiconductor Science and Technology. 30(7). 75007–75007. 11 indexed citations
6.
Das, Naresh C., Meredith Reed, Anand V. Sampath, et al.. (2013). Optimization of Annealing Process for Improved InGaN Solar Cell Performance. Journal of Electronic Materials. 42(12). 3467–3470. 2 indexed citations
7.
Keller, S., Robert M. Farrell, Michael Iza, et al.. (2013). Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells. Japanese Journal of Applied Physics. 52(8S). 08JC10–08JC10. 6 indexed citations
8.
Das, Naresh C., Meredith Reed, Anand V. Sampath, et al.. (2012). Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting. 3076–3079. 1 indexed citations
9.
Farrell, Robert M., Erin C. Young, Feng Wu, Steven P. DenBaars, & James S. Speck. (2012). Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices. Semiconductor Science and Technology. 27(2). 24001–24001. 250 indexed citations
10.
Toledo, Nikholas G., Daniel J. Friedman, Robert M. Farrell, et al.. (2012). Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices. Journal of Applied Physics. 111(5). 21 indexed citations
11.
Hu, Yan-Ling, Robert M. Farrell, Carl J. Neufeld, et al.. (2012). Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells. Applied Physics Letters. 100(16). 55 indexed citations
12.
Neufeld, Carl J., Samantha C. Cruz, Robert M. Farrell, et al.. (2011). Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells. Applied Physics Letters. 99(7). 71104–71104. 25 indexed citations
13.
Farrell, Robert M., Carl J. Neufeld, Samantha C. Cruz, et al.. (2011). High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm. Applied Physics Letters. 98(20). 120 indexed citations
14.
Matioli, Elison, Carl J. Neufeld, Michael Iza, et al.. (2011). High internal and external quantum efficiency InGaN/GaN solar cells. Applied Physics Letters. 98(2). 185 indexed citations
15.
Neufeld, Carl J., Samantha C. Cruz, Robert M. Farrell, et al.. (2011). Effect of doping and polarization on carrier collection in InGaN quantum well solar cells. Applied Physics Letters. 98(24). 69 indexed citations
16.
Farrell, Robert M., Daniel A. Haeger, Xiang Chen, et al.. (2010). Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates. Applied Physics Letters. 96(23). 40 indexed citations
17.
Farrell, Robert M., Daniel A. Haeger, Xiang Chen, et al.. (2010). Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes. Journal of Crystal Growth. 313(1). 1–7. 33 indexed citations
18.
Sharma, Rajat, P. Morgan Pattison, Troy J. Baker, et al.. (2005). A semipolar (10-1-3) InGaN/GaN green light emitting diode. MRS Proceedings. 892. 1 indexed citations
19.
Braun, John R. & Robert M. Farrell. (1974). Re-Examination of the Fakability of the Gordon Personal Inventory and Profile: A Reply to Schwab. Psychological Reports. 34(1). 247–250. 7 indexed citations
20.
Farrell, Robert M., G. Entine, F. F. Wilson, & F. V. Wald. (1974). Photoresponse of high resistivity cadmium telluride between room temperature and 400°C. Journal of Electronic Materials. 3(1). 155–170. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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