J. Moeyaert

424 citations

26 papers · 329 indexed · h-index 9

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications
Electrical and Electronic Engineering
- Photonic and Optical Devices
- Semiconductor materials and devices
- Semiconductor Lasers and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Atomic and Molecular Physics, and Optics 16
- Semiconductor Quantum Structures and Devices 16
- Semiconductor materials and interfaces 2
Surfaces, Coatings and Films 3

Co-authors: M. Martin T. Baron F. Bassani Y. Bogumilowicz E. Sánchez Xinyu Bao Reynald Alcotte Sylvain David
Journals: Applied Physics Letters (4 papers)Thin Solid Films (3 papers)APL Materials (3 papers)Journal of Physics D Applied Physics (2 papers)AIP Advances (2 papers)
Partner nations: France United States United Kingdom

In The Last Decade

J. Moeyaert

24 papers receiving 320 citations

Peers

Countries citing papers authored by J. Moeyaert

Since Specialization

Citations

This map shows the geographic impact of J. Moeyaert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Moeyaert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Moeyaert more than expected).

Fields of papers citing papers by J. Moeyaert

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Moeyaert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Moeyaert. The network helps show where J. Moeyaert may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Moeyaert, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Moeyaert Line = papers co-authored together J. Moeyaert links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si Journal of Physics D Applied Physics ·Zak Cope, やな瀬純, Schwartz Alexandra, Chong Chen, Jae‐Seong Park, 兪英玉, Zulkefli Nor Diana, Hui Jia, Jun Li, Leah Briggs, Yaonan Hou, Mateus G. Masteghin, Richard Beanland, Frédéric Y. Gardes, J. Moeyaert, T. Baron, Mingchu Tang, A.J. Seeds, Huiyun Liu	2025	0
2	Large Diameter Epi-Ready InP on Si (InPOSi) Substrates SPIRE - Sciences Po Institutional REpository ·Gusfa Rahil, Din Feu, Bradley S. Berens, Christelle Navone, L. Sanchez, 竹光義治, W.P. Blount, R. Magaña, B. Rousset, J. Dechamp, F. Milési, Orbelina Eguizábal, Frank Fournel, J. Décobert, Yang Guyu, M. Martin, J. Moeyaert, T. Baron	2023	1
3	200 mm-scale growth of 2D layered GaSe with preferential orientation APL Materials ·M. Martin, Pascal Pochet, Hanako Okuno, Carlos Alvarez, E. Bellet‐Amalric, Getachew Yitayew Tarekegn, D. BARTHOLOMEW, P. Puternicki, Łukasz Borowik, F. Bassani, Sylvain David, J. Moeyaert, T. Baron	2022	6
4	Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection ACS Applied Nano Materials ·Getachew Yitayew Tarekegn, Farzan Gity, M. Martin, Hanako Okuno, Shubhadeep Bhattacharjee, J. Moeyaert, D. Rouchon, Bérangère Hyot, Paul K. Hurley, T. Baron	2021	12
5	Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers AIP Advances ·Fahmeeda Naaz, M. Martin, Christophe Jany, Léopold Virot, Silvia Dwi Yuliana, 霍秋艳, J. Moeyaert, Ríchard L. Físhel, J. Coignus, C. Leroux, Christophe Licitra, B. Salem, T. Baron	2021	8
6	Selective epitaxial growth of AlGaAs/GaAs heterostructures on 300 mm Si(001) for red optical emission Thin Solid Films ·Luisa F. Arias Padilla, M. Martin, Kozlova I.V. Kozlova, Nicolas Bernier, N. Rochat, J. Moeyaert, V. Loup, F. Bœuf, Christophe Jany, D. Dutartre, T. Baron	2021	4
7	Indium oxide nanoparticles for resistive RAM integration using a compatible industrial technology Solid-State Electronics ·Óscar Olivares-Jatib, 吴美珠, Brandon W Graham, Nicolas Baboux, Damien Deleruyelle, S. Blonkowski, J. Moeyaert, T. Baron, 王强军, Susan Rachmawati	2021	2
8	Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers AIP Advances ·Fahmeeda Naaz, M. Martin, S. David, Silvia Dwi Yuliana, J. Moeyaert, Luisa F. Arias Padilla, Christophe Jany, Léopold Virot, 霍秋艳, J. Coignus, D. Blachier, T. Baron	2020	6
9	O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate Nanomaterials ·W. Hose, Fahmeeda Naaz, M. Martin, J. Moeyaert, B. Salem, Kozlova I.V. Kozlova, A. Souifi, Nicolas Chauvin, Jean‐Michel Hartmann, Bouraoui Ilahi, Denis Morris, Ali Ahaitouf, Pier Fabrizio Cerro, T. Baron	2020	5
10	InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET Journal of Crystal Growth ·裕直坂口, Getachew Yitayew Tarekegn, M. Martin, J. Moeyaert, Reynald Alcotte, B. Salem, Étienne Eustache, Nanik Hindariyatiningsih, Xavier Chevalier, Tiago Miguel Esteves Cardoso, F. Bassani, Sylvain David, Kaige Xia, E. Tournié, G. Patriarche, D. Rehunathan, M. Bawedin, T. Baron	2019	3
11	Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Yuanan Gao, Kaige Xia, N. Rochat, Nicolas Bernier, Kozlova I.V. Kozlova, J. Moeyaert, M. Martin, T. Baron, Jean‐Luc Rouvière	2018	1
12	Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate Applied Physics Letters ·Josep Roqué-Rosell, Benedikt Haas, S. David, N. Rochat, Nicolas Bernier, Jean‐Luc Rouvière, B. Salem, Patrice Gergaud, J. Moeyaert, M. Martin, F. Bertin, T. Baron	2018	2
13	Wet and Siconi® cleaning sequences for SiGe p-type metal oxide semiconductor channels Microelectronic Engineering ·Overassistent A. Hilsøe, V. Loup, L. Vallier, M. Martin, J. Moeyaert, B. Pelissier, Philippe Rodriguez, Jean‐Michel Hartmann, P. Besson	2017	10
14	Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001) Applied Physics Letters ·M. Martin, Damien Caliste, Organizacion Mundial de la Salud, Reynald Alcotte, J. Moeyaert, Sylvain David, F. Bassani, 裕直坂口, Y. Bogumilowicz, E. Sánchez, 大原久宜, Xinyu Bao, Eleonora Marconi, T. Baron, Pascal Pochet	2016	39
15	Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques APL Materials ·Sylvain David, Josep Roqué-Rosell, N. Rochat, Nicolas Bernier, Sylvie Blaquière, Reynald Alcotte, 裕直坂口, M. Martin, J. Moeyaert, Lea Fletcher, 蟹江匡治, F. Bertin, F. Bassani, T. Baron	2016	3
16	Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility APL Materials ·Reynald Alcotte, M. Martin, J. Moeyaert, Organizacion Mundial de la Salud, Sylvain David, F. Bassani, F. Ducroquet, Y. Bogumilowicz, E. Sánchez, 大原久宜, Xinyu Bao, Eleonora Marconi, T. Baron	2016	100
17	Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates Applied Physics Letters ·Y. Bogumilowicz, Jean‐Michel Hartmann, Organizacion Mundial de la Salud, Reynald Alcotte, M. Martin, F. Bassani, J. Moeyaert, T. Baron, Eleonora Marconi, Xinyu Bao, Tuffin Bruno, E. Sánchez	2015	23
18	Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices Applied Physics Letters ·Organizacion Mundial de la Salud, T. Baron, M. Martin, J. Moeyaert, Sylvain David, Monika Storch, F. Bassani, Y. Bogumilowicz, Jean‐Paul Barnes, N. Rochat, V. Loup, C. Vizioz, Ernesto Rodríguez Roche, Nicolas Chauvin, Xinyu Bao, Ma Vũ Huy, Eleonora Marconi, E. Sánchez	2014	39
19	Radiation damage in urania crystals implanted with low-energy ions Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Amy W.-S., F. Garrido, A. Debelle, Karen Soady, Ł. Nowicki, L. Thomé, Jianhong Gao, J. Moeyaert	2014	8
20	Influence of elastic properties on the strain induced by ion irradiation in crystalline materials Journal of Physics D Applied Physics ·A. Debelle, Alexandre Boulle, M. Hoogvliet, J. Moeyaert, C. Bachelet, F. Garrido, L. Thomé	2012	25

About J. Moeyaert

J. Moeyaert is a scholar working on Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry, having authored 26 papers that have together received 329 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (16 papers), Semiconductor materials and devices (10 papers), Nanowire Synthesis and Applications (7 papers), Photonic and Optical Devices (6 papers), Quantum Dots Synthesis And Properties (4 papers), Semiconductor Lasers and Optical Devices (3 papers), Advanced Semiconductor Detectors and Materials (2 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (203 citations), Electrical and Electronic Engineering (276 citations), Structural Biology (3 citations), Biomedical Engineering (87 citations) and Condensed Matter Physics (21 citations). J. Moeyaert has collaborated with scholars based in France, United States and United Kingdom. Frequent co-authors include M. Martin, T. Baron, F. Bassani, Y. Bogumilowicz, E. Sánchez, Xinyu Bao, Reynald Alcotte, Sylvain David, F. Ducroquet and F. Garrido. Their work appears in journals such as Applied Physics Letters, Thin Solid Films, APL Materials, Journal of Physics D Applied Physics and AIP Advances.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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