F. Bassani

2.4k total citations · 1 hit paper
105 papers, 1.9k citations indexed

About

F. Bassani is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F. Bassani has authored 105 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 95 papers in Electrical and Electronic Engineering, 50 papers in Atomic and Molecular Physics, and Optics and 46 papers in Materials Chemistry. Recurrent topics in F. Bassani's work include Semiconductor materials and devices (53 papers), Nanowire Synthesis and Applications (29 papers) and Silicon Nanostructures and Photoluminescence (29 papers). F. Bassani is often cited by papers focused on Semiconductor materials and devices (53 papers), Nanowire Synthesis and Applications (29 papers) and Silicon Nanostructures and Photoluminescence (29 papers). F. Bassani collaborates with scholars based in France, Belarus and United States. F. Bassani's co-authors include S. Tatarenko, K. Saminadayar, R.T. Cox, K. Kheng, F. Arnaud d’Avitaya, T. Baron, R A Ballinger, Giuseppe Pastori Parravicini, Joseph L. Birman and B. Salem and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

F. Bassani

103 papers receiving 1.8k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Observation of negatively charged excitonsX−in semiconductor quantum wells

1993 528 citations F. Bassani, K. Saminadayar et al. profile →

Peers

Countries citing papers authored by F. Bassani

Since Specialization

Citations

This map shows the geographic impact of F. Bassani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Bassani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Bassani more than expected).

Fields of papers citing papers by F. Bassani

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Bassani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Bassani. The network helps show where F. Bassani may publish in the future.

Co-authorship network of co-authors of F. Bassani

This figure shows the co-authorship network connecting the top 25 collaborators of F. Bassani. A scholar is included among the top collaborators of F. Bassani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Bassani. F. Bassani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Spectroscopic investigation of oxidation in GaSe 2D layered materials 2024 ·Microelectronic Engineering ·(unknown), (unknown), M. Martin, Hervé Roussel, Jean‐Luc Deschanvres, Emmanuel Nolot, N. Rochat, F. Bassani, T. Baron, (unknown)	4
2	Plasma-enhanced atomic layer deposition of silicon nitride thin films with different substrate biasing using Diiodosilane precursor 2024 ·Materials Science in Semiconductor Processing ·(unknown), (unknown), (unknown), (unknown), F. Bassani, B. Salem	2
3	Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors 2023 ·Advanced Electronic Materials ·(unknown), (unknown), (unknown), F. Bassani, Laura Vauche, E. Martínez, (unknown), M. Veillerot, B. Salem	4
4	200 mm-scale growth of 2D layered GaSe with preferential orientation 2022 ·APL Materials ·M. Martin, Pascal Pochet, Hanako Okuno, Carlos Alvarez, E. Bellet‐Amalric, (unknown), (unknown), (unknown), Łukasz Borowik, F. Bassani, Sylvain David, J. Moeyaert, T. Baron	6
5	Enhancing the incorporation of Sn in vapor–liquid–solid GeSn nanowires by modulation of the droplet composition 2022 ·Nanotechnology ·(unknown), (unknown), F. Bassani, (unknown), E. Martínez, (unknown), P. Gentile, В. Г. Дубровский, B. Salem	1
6	AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth 2021 ·Applied Sciences ·(unknown), Delphine Néel, D. Maké, (unknown), (unknown), Nicolas Vaissière, David Bitauld, F. Pommereau, Frank Fournel, C. Dupré, (unknown), F. Bassani, J. Décobert	10
7	Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors 2021 ·Semiconductor Science and Technology ·Étienne Eustache, (unknown), (unknown), (unknown), J. Aubin, Jean‐Michel Hartmann, F. Bassani, Sylvain David, B. Salem	5
8	Impact of droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowires 2020 ·Nanotechnology ·(unknown), (unknown), F. Bassani, P. Gentile, B. Salem, В. Г. Дубровский	6
9	Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications 2019 ·Nanotechnology ·(unknown), B. Salem, Xavier Baillin, Hervé Roussel, Eirini Sarigiannidou, F. Bassani, Estelle Appert, (unknown), Vincent Consonni	12
10	Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO ₂ /Si substrate 2019 ·Nanotechnology ·(unknown), Frank Fournel, L. Sanchez, Nicolas Vaissière, C. Dupré, (unknown), (unknown), (unknown), F. Bassani, Sylvain David, T. Baron, J. Décobert	3
11	Combined ToF-SIMS and AFM protocol for accurate 3D chemical analysis and data visualization 2018 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·(unknown), Isabelle Mouton, Nicolas Chevalier, Jean‐Paul Barnes, F. Bassani, Brice Gautier	7
12	Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001) 2016 ·Applied Physics Letters ·M. Martin, Damien Caliste, (unknown), Reynald Alcotte, J. Moeyaert, Sylvain David, F. Bassani, (unknown), Y. Bogumilowicz, E. Sánchez, (unknown), Xinyu Bao, (unknown), T. Baron, Pascal Pochet	39
13	SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering 2016 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·(unknown), F. Bassani, (unknown), T. Baron, M. Martin, Sylvain David, Jean‐Paul Barnes	1
14	High density and taper-free boron doped Si1−xGex nanowire via two-step growth process 2014 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown), B. Salem, F. Bassani, T. Baron, Jean‐Paul Barnes	2
15	Nanoscale Surface and Sub-Surface Chemical Analysis of SiGe Nanowires 2014 ·Microscopy and Microanalysis ·(unknown), E. Martínez, (unknown), G. Patriarche, F. Bassani, (unknown), T. Baron	1
16	Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy 2011 ·Nanoscale Research Letters ·(unknown), G. Brémond, F. Bassani	5
17	The effect of Sb on the oxidation of Ge quantum dots 2003 ·Materials Science and Engineering B ·Young Soo Lim, F. Bassani, A. Portavoce, A. Ronda, Satoshi Nozaki, Isabelle Berbézier	2
18	Vertical electrical transport in Si/CaF2 nanocrystalline heterostructures 2000 ·Materials Science and Engineering B ·(unknown), (unknown), F. Bassani, F. Arnaud d’Avitaya, (unknown), В. Е. Борисенко	2
19	Electroluminescence simulation of multiquantum well silicon structures 1999 ·Journal of Applied Physics ·(unknown), A. L. Danilyuk, В. Е. Борисенко, F. Bassani, (unknown), F. Arnaud d’Avitaya	5
20	Donor activation efficiency and doping profile quality in In-doped CdTe and CdZnTe quantum structures 1993 ·Materials Science and Engineering B ·F. Bassani, S. Tatarenko, K. Saminadayar, C. Grattepain	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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