B. Ściana

516 total citations
76 papers, 377 citations indexed

About

B. Ściana is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, B. Ściana has authored 76 papers receiving a total of 377 indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Atomic and Molecular Physics, and Optics, 60 papers in Electrical and Electronic Engineering and 23 papers in Condensed Matter Physics. Recurrent topics in B. Ściana's work include Semiconductor Quantum Structures and Devices (57 papers), Semiconductor materials and devices (24 papers) and GaN-based semiconductor devices and materials (23 papers). B. Ściana is often cited by papers focused on Semiconductor Quantum Structures and Devices (57 papers), Semiconductor materials and devices (24 papers) and GaN-based semiconductor devices and materials (23 papers). B. Ściana collaborates with scholars based in Poland, Slovakia and Germany. B. Ściana's co-authors include M. Tłaczała, J. Misiewicz, Jaroslav Kováč, Miroslav Mikolášek, Marek Panek, Ł. Stuchlíková, R. Srnánek, G. Sęk, L. Harmatha and Marc M. Nowaczyk and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of Applied Physics and Optics Express.

In The Last Decade

B. Ściana

66 papers receiving 363 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Ściana Poland 11 284 277 89 75 58 76 377
I. P. Soshnikov Russia 9 218 0.8× 200 0.7× 44 0.5× 83 1.1× 106 1.8× 35 307
C. Anayama Japan 11 303 1.1× 295 1.1× 73 0.8× 40 0.5× 71 1.2× 25 378
Naohiro Kuze Japan 13 311 1.1× 207 0.7× 54 0.6× 87 1.2× 87 1.5× 54 388
P. Roentgen Switzerland 12 431 1.5× 467 1.7× 95 1.1× 65 0.9× 100 1.7× 37 570
Н. С. Болтовец Ukraine 9 193 0.7× 181 0.7× 71 0.8× 63 0.8× 75 1.3× 59 304
W. K. Chan United States 10 230 0.8× 229 0.8× 44 0.5× 38 0.5× 49 0.8× 22 359
Chantal Fontaine France 12 238 0.8× 246 0.9× 62 0.7× 80 1.1× 95 1.6× 32 356
A. Bärwolff Germany 13 347 1.2× 273 1.0× 34 0.4× 42 0.6× 63 1.1× 26 423
Kalyan Nunna United States 14 313 1.1× 328 1.2× 62 0.7× 98 1.3× 94 1.6× 22 395
M.L. Osowski United States 16 600 2.1× 301 1.1× 37 0.4× 68 0.9× 48 0.8× 69 660

Countries citing papers authored by B. Ściana

Since Specialization
Citations

This map shows the geographic impact of B. Ściana's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Ściana with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Ściana more than expected).

Fields of papers citing papers by B. Ściana

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Ściana. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Ściana. The network helps show where B. Ściana may publish in the future.

Co-authorship network of co-authors of B. Ściana

This figure shows the co-authorship network connecting the top 25 collaborators of B. Ściana. A scholar is included among the top collaborators of B. Ściana based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Ściana. B. Ściana is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Stuchlíková, Ł., et al.. (2022). Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy. Materials. 15(21). 7621–7621.
3.
Ściana, B., et al.. (2022). Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE. Energies. 15(9). 3036–3036. 2 indexed citations
4.
Ściana, B., Miroslav Mikolášek, J. Serafińczuk, et al.. (2021). Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell. Energies. 14(15). 4651–4651. 13 indexed citations
5.
6.
Stuchlíková, Ł., et al.. (2017). Composition Related Electrical Active Defect States of InGaAs and GaAsN. Advances in Electrical and Electronic Engineering. 15(1). 2 indexed citations
7.
Pierścińska, Dorota, et al.. (2017). Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance. Photonics. 4(4). 47–47. 14 indexed citations
8.
9.
Pudiš, Dušan, et al.. (2016). GaAs-based photodetector with applied PDMS membrane with photonic crystal in the surface. 33–36. 1 indexed citations
10.
Ściana, B., et al.. (2016). Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates. Materials Science-Poland. 34(4). 872–880. 2 indexed citations
11.
Ściana, B., et al.. (2014). Structural Characterization of Doped Thick Gainnas Layers - Ambiguities and Challenges. Journal of Electrical Engineering. 65(5). 299–303. 5 indexed citations
12.
Płaczek‐Popko, E., et al.. (2013). Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8902. 89020F–89020F. 2 indexed citations
13.
Biegański, P., E. Płaczek‐Popko, E. Zielony, et al.. (2013). Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE. Materials Science-Poland. 31(4). 595–600. 2 indexed citations
14.
Stuchlíková, Ł., et al.. (2012). Deep levels in InGaAsN/GaAs and InGaAs/GaAs heterojunctions. 103–106.
15.
Szyszka, A., et al.. (2011). Characterization of A III B V epitaxial layers by scanning spreading resistance microscopy. Optica Applicata. 41.
16.
Panek, Marek, et al.. (2008). Modelowanie numeryczne nowego czujnika pola magnetycznego. 301–304.
17.
Ściana, B., et al.. (2007). Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region. Optica Applicata. 37. 415–421.
18.
Motyka, M., G. Sęk, J. Andrzejewski, et al.. (2005). Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer. Optica Applicata. 35(6). 471–477. 1 indexed citations
19.
Srnánek, R., J. Geurts, M. J. Lentze, et al.. (2004). Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples. Applied Surface Science. 230(1-4). 379–385. 8 indexed citations
20.
Nowaczyk, Marc M., et al.. (2000). Photoreflectance study of δ-doped semiconductor layers by a fast Fourier transformation. Thin Solid Films. 380(1-2). 243–245. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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