U‐In Chung

12.0k total citations · 4 hit papers
180 papers, 9.4k citations indexed

About

U‐In Chung is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, U‐In Chung has authored 180 papers receiving a total of 9.4k indexed citations (citations by other indexed papers that have themselves been cited), including 139 papers in Electrical and Electronic Engineering, 67 papers in Materials Chemistry and 46 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in U‐In Chung's work include Semiconductor materials and devices (85 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Advanced Memory and Neural Computing (32 papers). U‐In Chung is often cited by papers focused on Semiconductor materials and devices (85 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Advanced Memory and Neural Computing (32 papers). U‐In Chung collaborates with scholars based in South Korea, United Kingdom and United States. U‐In Chung's co-authors include Myoung‐Jae Lee, Changjung Kim, Man Chang, Kinam Kim, In-Kyeong Yoo, Sunae Seo, David H. Seo, Young‐Bae Kim, Seung Ryul Lee and Sanghun Jeon and has published in prestigious journals such as Advanced Materials, Nature Communications and Nature Materials.

In The Last Decade

U‐In Chung

171 papers receiving 9.2k citations

Hit Papers

A fast, high-endurance and scalable non-volatile memory d... 2006 2026 2012 2019 2011 2014 2006 2014 500 1000 1.5k

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
U‐In Chung South Korea 41 7.5k 3.0k 2.5k 2.0k 1.2k 180 9.4k
Tailiang Guo China 45 5.6k 0.7× 2.6k 0.9× 2.0k 0.8× 2.1k 1.0× 1.2k 0.9× 336 7.4k
Hyunsang Hwang South Korea 57 13.4k 1.8× 3.8k 1.3× 2.7k 1.1× 548 0.3× 4.0k 3.2× 424 14.3k
David Wei Zhang China 45 6.3k 0.8× 4.2k 1.4× 869 0.3× 1.4k 0.7× 1.0k 0.8× 281 8.2k
Chaoxing Wu China 38 2.8k 0.4× 1.4k 0.5× 1.8k 0.7× 1.9k 0.9× 718 0.6× 187 4.6k
Joondong Kim South Korea 44 4.7k 0.6× 3.8k 1.3× 1.1k 0.4× 1.9k 0.9× 575 0.5× 316 7.3k
Reinhard Schwödiauer Austria 34 4.0k 0.5× 2.0k 0.7× 3.0k 1.2× 4.9k 2.4× 367 0.3× 88 7.9k
Junliang Yang China 64 10.8k 1.4× 5.0k 1.7× 4.6k 1.9× 2.3k 1.1× 1.5k 1.2× 349 12.7k
Xiaobing Yan China 44 5.9k 0.8× 2.2k 0.7× 1.5k 0.6× 788 0.4× 2.4k 2.0× 196 7.2k
Jang‐Sik Lee South Korea 49 7.0k 0.9× 2.7k 0.9× 2.3k 0.9× 921 0.5× 1.8k 1.5× 163 8.1k
Ruomeng Yu United States 42 3.8k 0.5× 2.9k 1.0× 2.6k 1.0× 6.3k 3.1× 203 0.2× 46 8.5k

Countries citing papers authored by U‐In Chung

Since Specialization
Citations

This map shows the geographic impact of U‐In Chung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U‐In Chung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U‐In Chung more than expected).

Fields of papers citing papers by U‐In Chung

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U‐In Chung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U‐In Chung. The network helps show where U‐In Chung may publish in the future.

Co-authorship network of co-authors of U‐In Chung

This figure shows the co-authorship network connecting the top 25 collaborators of U‐In Chung. A scholar is included among the top collaborators of U‐In Chung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with U‐In Chung. U‐In Chung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Roulland, F., et al.. (2022). Structural properties and polarization switching of epitaxial Bi2FeCrO6 thin films grown on La2/3Sr1/3MnO3/SrTiO3 (111) substrates. Thin Solid Films. 757. 139384–139384. 4 indexed citations
3.
Kim, Sungho, Young‐Bae Kim, Kyung Min Kim, et al.. (2013). Performance of threshold switching in chalcogenide glass for 3D stackable selector. Symposium on VLSI Technology. 41 indexed citations
4.
Ahn, Seung‐Eon, Ihun Song, Ji‐Hoon Ahn, et al.. (2013). Oxide based photosensor thin film transistor for interactive display. 67–70. 1 indexed citations
5.
Hwang, Injun, Jaejoon Oh, Hyuk Choi, et al.. (2013). Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage. IEEE Electron Device Letters. 34(5). 605–607. 46 indexed citations
6.
Kim, Kinam, et al.. (2012). Extending the DRAM and FLASH memory technologies to 10nm and beyond. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8326. 832605–832605. 24 indexed citations
7.
Lee, Seung Ryul, Young‐Bae Kim, Man Chang, et al.. (2012). Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory. 71–72. 134 indexed citations
8.
Kim, Young‐Bae, Seung Ryul Lee, Dongsoo Lee, et al.. (2011). Bi-layered RRAM with unlimited endurance and extremely uniform switching. Symposium on VLSI Technology. 52–53. 111 indexed citations
9.
Choi, Hyun‐Sik, Sanghun Jeon, Hojung Kim, et al.. (2011). Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics. Applied Physics Letters. 99(18). 32 indexed citations
10.
Jeon, Yong Woo, Sung‐Chul Kim, Sangwon Lee, et al.. (2010). P‐204L: Late‐News Poster : Subgap Density of States‐Based Amorphous Oxide Thin Film Transistor Simulator (DAOTS) for Process Optimization and Circuit Design. SID Symposium Digest of Technical Papers. 41(1). 1385–1388. 2 indexed citations
11.
Hong, Jungpyo, Hyun Park, Gyu‐Jin Choi, et al.. (2007). A Highly Reliable Cu Interconnect Technology for Memory Device. 64–66. 5 indexed citations
12.
Im, D.H., D.H. Kim, Dae-Hwan Ahn, et al.. (2006). Parallel multi-confined (PMC) cell technology for high density MLC PRAM. Symposium on VLSI Technology. 220–221. 12 indexed citations
13.
Baek, In-Gyu, Jinshi Zhao, Hyunjun Sim, et al.. (2006). Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications. Symposium on VLSI Technology. 26–27. 34 indexed citations
14.
Mayya, K. Subramanya, Sunwoo Lee, In‐Seok Yeo, U‐In Chung, & Joo-Tae Moon. (2006). Diameter controlled synthesis of carbon nanotubes by CVD using steric-stabilized iron nanoparticle catalysts. TechConnect Briefs. 1(2006). 98–101. 2 indexed citations
16.
Oh, Sechang, et al.. (2006). Magnetic and Electrical Properties of Magnetic Tunnel Junctions With Radical Oxidized MgO Barriers. IEEE Transactions on Magnetics. 42(10). 2642–2644. 4 indexed citations
17.
Huo, Zongliang, et al.. (2006). Sub-6F2 Charge Trap Dynamic Random Access Memory Using a Novel Operation Scheme. 23. 261–262. 2 indexed citations
18.
19.
Lim, Ji‐Eun, et al.. (2006). Highly Reliable 0.15 µm/14 F2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO3 Buffer Layer. Japanese Journal of Applied Physics. 45(4S). 3198–3198. 11 indexed citations
20.
Oh, Sechang, et al.. (2005). Improvement of writing margin in MRAM with novel shape. Journal of Applied Physics. 97(10). 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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