Jongsun Sel

443 total citations
16 papers, 318 citations indexed

About

Jongsun Sel is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jongsun Sel has authored 16 papers receiving a total of 318 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 11 papers in Computer Networks and Communications and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jongsun Sel's work include Semiconductor materials and devices (13 papers), Advanced Data Storage Technologies (11 papers) and Copper Interconnects and Reliability (3 papers). Jongsun Sel is often cited by papers focused on Semiconductor materials and devices (13 papers), Advanced Data Storage Technologies (11 papers) and Copper Interconnects and Reliability (3 papers). Jongsun Sel collaborates with scholars based in South Korea and United States. Jongsun Sel's co-authors include Kinam Kim, Jungdal Choi, Changseok Kang, Kitae Park, Sanghun Jeon, Jang‐Sik Lee, Jintaek Park, Young‐Woo Park, Jungdal Choi and Changhyun Lee and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Solid State Communications.

In The Last Decade

Jongsun Sel

16 papers receiving 305 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Jongsun Sel South Korea	10	292	111	60	22	22	16	318
O. Tsuchiya Japan	8	353 1.2×	75 0.7×	52 0.9×	20 0.9×	16 0.7×	15	380
Sung-Joo Hong South Korea	8	234 0.8×	115 1.0×	32 0.5×	17 0.8×	23 1.0×	25	269
Akira Kotabe Japan	9	371 1.3×	104 0.9×	37 0.6×	21 1.0×	19 0.9×	20	406
Wandong Kim South Korea	9	205 0.7×	92 0.8×	48 0.8×	24 1.1×	39 1.8×	26	248
A. Chimenton Italy	11	335 1.1×	115 1.0×	65 1.1×	21 1.0×	7 0.3×	40	362
Sung-Min Joe South Korea	9	236 0.8×	160 1.4×	23 0.4×	17 0.8×	20 0.9×	27	272
A. Fazio United States	8	271 0.9×	151 1.4×	56 0.9×	19 0.9×	30 1.4×	14	344
Kang-Deog Suh South Korea	10	247 0.8×	134 1.2×	58 1.0×	11 0.5×	35 1.6×	27	305
Jung-Yu Hsieh Taiwan	10	337 1.2×	93 0.8×	68 1.1×	14 0.6×	22 1.0×	33	361
D. Park South Korea	11	257 0.9×	66 0.6×	21 0.3×	11 0.5×	11 0.5×	20	278

Countries citing papers authored by Jongsun Sel

Since Specialization

Citations

This map shows the geographic impact of Jongsun Sel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jongsun Sel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jongsun Sel more than expected).

Fields of papers citing papers by Jongsun Sel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jongsun Sel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jongsun Sel. The network helps show where Jongsun Sel may publish in the future.

Co-authorship network of co-authors of Jongsun Sel

This figure shows the co-authorship network connecting the top 25 collaborators of Jongsun Sel. A scholar is included among the top collaborators of Jongsun Sel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jongsun Sel. Jongsun Sel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

16 of 16 papers shown

Park, Kitae, et al.. (2008). A Novel nand Flash Memory With Asymmetric S/D Structure Using Fringe-Field-Induced Inversion Layer. IEEE Transactions on Electron Devices. 55(1). 404–410. 16 indexed citations

Lee, Chang‐Hyun, Changseok Kang, Sanghun Jeon, et al.. (2008). Reliability Characteristics of TANOS (TaN/AlO/SiN/Oxide/Si)NAND Flash Memory with Rounded Corner (RC) Structure. 117–118. 5 indexed citations

Kang, Changseok, Jungdal Choi, Changhyun Lee, et al.. (2007). Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory. 167–170. 41 indexed citations

Park, Jintaek, Changseok Kang, Ju-Hyung Kim, et al.. (2007). Self Aligned Trap-Shallow Trench Isolation Scheme for the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory. 110–111. 7 indexed citations

Park, Kitae, Seung‐Chul Lee, Jongsun Sel, Jungdal Choi, & Kinam Kim. (2007). Scalable Wordline Shielding Scheme using Dummy Cell beyond 40 nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell. Japanese Journal of Applied Physics. 46(4S). 2188–2188. 17 indexed citations

Park, Young‐Woo, Jungdal Choi, Changseok Kang, et al.. (2006). Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 &#x003BC;m<sup>2</sup> Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology. 1–4. 54 indexed citations

Sel, Jongsun, Chan Kang, Youngsoo Shin, et al.. (2006). A 64-Cell NAND Flash Memory with Asymmetric S/D Structure for Sub-40nm Technology and Beyond. 19–20. 13 indexed citations

Choi, Jaehyuck, Youngsoo Shin, Jang‐Sik Lee, et al.. (2006). Multi-Level NAND Flash Memory with 63 nm-Node TANOS (Si-Oxide-SiN-Al2O3-TaN) Cell Structure. 31 indexed citations

Choi, Jungdal, Changseok Kang, Chang Hyun Lee, et al.. (2006). A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs. 327–330. 39 indexed citations

10.

Kang, Changseok, Jang‐Sik Lee, Kitae Park, et al.. (2006). Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory. 54–55. 13 indexed citations

11.

Park, Ki‐Tae, Seung‐Chul Lee, Jongsun Sel, Jungdal Choi, & Kinam Kim. (2006). Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND　Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell. 4 indexed citations

12.

Lee, Jang‐Sik, Changseok Kang, Kitae Park, et al.. (2006). Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory. Japanese Journal of Applied Physics. 45(4S). 3213–3213. 29 indexed citations

13.

Lee, Chang‐Hyun, et al.. (2006). Charge Trapping Memory Cell of TANOS (Oxide-SiN-Al₂O₃-TaN) Structure Erased by Fowler-Nordheim Tunneling of Holes. MRS Proceedings. 933. 1 indexed citations

14.

Park, Jong‐Ho, Sung‐Hoi Hur, Jongsun Sel, et al.. (2005). 8Gb MLC (Multi-Level Cell) NAND flash memory using 63nm process technology. 873–876. 38 indexed citations

15.

Park, Min-Cheol, Jungdal Choi, Sung‐Hoi Hur, et al.. (2005). Effect of low-K dielectric material on 63nm MLC (multi-level cell) NAND flash cell arrays. 23. 37–38. 1 indexed citations

16.

Sel, Jongsun, et al.. (1999). Dielectric properties of (K0.4Na0.6)2(Sr0.6Ba0.4)4Nb10O30 thin films fabricated by RF magnetron sputtering method. Solid State Communications. 111(3). 125–129. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact