I. Shlimak

1.1k total citations
84 papers, 831 citations indexed

About

I. Shlimak is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, I. Shlimak has authored 84 papers receiving a total of 831 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Atomic and Molecular Physics, and Optics, 44 papers in Electrical and Electronic Engineering and 44 papers in Materials Chemistry. Recurrent topics in I. Shlimak's work include Quantum and electron transport phenomena (30 papers), Semiconductor materials and interfaces (22 papers) and Semiconductor materials and devices (19 papers). I. Shlimak is often cited by papers focused on Quantum and electron transport phenomena (30 papers), Semiconductor materials and interfaces (22 papers) and Semiconductor materials and devices (19 papers). I. Shlimak collaborates with scholars based in Israel, Russia and Germany. I. Shlimak's co-authors include M. Kaveh, A. N. Ionov, M. Pepper, D. A. Ritchie, Saiful I. Khondaker, J. T. Nicholls, P. Fozooni, S.M. Ryvkin, А. В. Бутенко and K.‐J. Friedland and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

I. Shlimak

82 papers receiving 799 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
I. Shlimak Israel 17 462 456 442 180 80 84 831
Kenichiro Takahei Japan 21 580 1.3× 611 1.3× 709 1.6× 159 0.9× 77 1.0× 53 1.0k
A. G. Zabrodskiĭ Russia 14 379 0.8× 327 0.7× 370 0.8× 87 0.5× 52 0.7× 98 764
J. N. Miller United States 20 960 2.1× 408 0.9× 1.2k 2.6× 257 1.4× 131 1.6× 64 1.5k
P. Paroli Italy 17 342 0.7× 260 0.6× 366 0.8× 328 1.8× 91 1.1× 89 806
T. Figielski Poland 18 703 1.5× 286 0.6× 613 1.4× 129 0.7× 96 1.2× 100 974
J. Šik Czechia 11 203 0.4× 186 0.4× 284 0.6× 152 0.8× 108 1.4× 33 483
Y. Osaka Japan 18 193 0.4× 751 1.6× 792 1.8× 60 0.3× 69 0.9× 47 1.1k
O. Andreyev Germany 11 414 0.9× 177 0.4× 352 0.8× 59 0.3× 112 1.4× 13 761
H. Nakagome Japan 21 712 1.5× 410 0.9× 978 2.2× 125 0.7× 105 1.3× 39 1.2k
J.‐L. Lazzari France 16 561 1.2× 414 0.9× 761 1.7× 85 0.5× 124 1.6× 95 955

Countries citing papers authored by I. Shlimak

Since Specialization
Citations

This map shows the geographic impact of I. Shlimak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Shlimak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Shlimak more than expected).

Fields of papers citing papers by I. Shlimak

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Shlimak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Shlimak. The network helps show where I. Shlimak may publish in the future.

Co-authorship network of co-authors of I. Shlimak

This figure shows the co-authorship network connecting the top 25 collaborators of I. Shlimak. A scholar is included among the top collaborators of I. Shlimak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Shlimak. I. Shlimak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Бутенко, А. В., et al.. (2017). Charge carrier transport asymmetry in monolayer graphene. Physical review. B.. 96(24). 9 indexed citations
2.
Levy, Shai, et al.. (2008). Electronic devices based upon Germanium nano-crystals withdurability to strong neutron irradiation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7095. 709502–709502. 1 indexed citations
3.
Shlimak, I., et al.. (2006). Disorder‐induced features of the transverse resistance in a Si‐MOSFET in the quantum Hall effect regime. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(2). 309–312. 3 indexed citations
4.
Shlimak, I., et al.. (2002). Low-temperature resistance saturation in Si–δ-doped GaAs structure with Π-like gate electrode. Physica E Low-dimensional Systems and Nanostructures. 12(1-4). 634–636. 1 indexed citations
5.
Shlimak, I., V. I. Safarov, & I. D. Vagner. (2001). Isotopically engineered silicon/silicon-germanium nanostructures as basic elements for a nuclear spin quantum computer. Journal of Physics Condensed Matter. 13(26). 6059–6065. 13 indexed citations
6.
Shlimak, I. & M. Pepper. (2001). Two-dimensional variable-range hopping conductivity: Influence of the electron-ectron interaction. Philosophical Magazine B. 81(9). 1093–1103. 5 indexed citations
7.
Shlimak, I., Saiful I. Khondaker, M. Pepper, & D. A. Ritchie. (2000). Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity. Physical review. B, Condensed matter. 61(11). 7253–7256. 22 indexed citations
8.
Shlimak, I., et al.. (1997). Unification of the metal-insulator transitions driven by the impurity concentration and by the magnetic field in arsenic-doped germanium. Physical review. B, Condensed matter. 55(3). 1303–1305. 5 indexed citations
9.
Shlimak, I., et al.. (1997). Quantitative analysis of delocalization in the vicinity of the metal - insulator transition in doped semiconductors. Journal of Physics Condensed Matter. 9(45). 9873–9880. 3 indexed citations
10.
Shlimak, I., et al.. (1995). Temperature-Induced Smearing of the Coulomb Gap: Experiment and Computer Simulation. Physical Review Letters. 75(26). 4764–4767. 29 indexed citations
11.
Shlimak, I. & M. J. Lea. (1994). ABOUT THE CROSSOVER PHENOMENON FOR VRH-CONDUCTIVITY. International Journal of Modern Physics B. 8(7). 891–896. 2 indexed citations
12.
Shlimak, I., et al.. (1993). A crossover from the Efros-Shklovskii law to the Mott law in a variable-range hopping conductivity. Semiconductors. 27(11). 1069–1073. 3 indexed citations
13.
Ionov, A. N., et al.. (1989). Highly conducting state in oxidized polypropylene films. Soviet physics. Doklady. 34. 1016. 2 indexed citations
14.
Friedland, K.‐J., et al.. (1986). Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide. physica status solidi (b). 137(2). 691–700. 23 indexed citations
15.
Ionov, A. N., et al.. (1983). An experimental determination of the critical exponents at the metal-insulator transition. Solid State Communications. 47(10). 763–766. 63 indexed citations
16.
Ryvkin, S.M., et al.. (1979). Interaction of impurities and dislocations in a doped, plasticly-deformed n-type germanium. 29. 239. 1 indexed citations
17.
Gelmont, Boris, et al.. (1975). HOPPING CONDUCTION IN GERMANIUM-SILICON SOLID SOLUTIONS.. 8(12). 1549–1553. 2 indexed citations
18.
Ryvkin, S.M. & I. Shlimak. (1973). A doped highly compensated crystal semiconductor as a model of amorphous semiconductors. physica status solidi (a). 16(2). 515–526. 22 indexed citations
19.
Safarov, V. I., I. Shlimak, & A. N. Titkov. (1970). Exciton Absorption in Compensated Germanium. physica status solidi (b). 41(1). 439–443. 3 indexed citations
20.
Shlimak, I., et al.. (1969). The Influence of Local Potential Fluctuations on the Low‐Temperature Radiative Recombination of Compensated Germanium. physica status solidi (b). 33(2). 805–809. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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