J. Woitok

406 total citations
52 papers, 284 citations indexed

About

J. Woitok is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, J. Woitok has authored 52 papers receiving a total of 284 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 24 papers in Condensed Matter Physics. Recurrent topics in J. Woitok's work include GaN-based semiconductor devices and materials (24 papers), Semiconductor Quantum Structures and Devices (23 papers) and Quantum Dots Synthesis And Properties (15 papers). J. Woitok is often cited by papers focused on GaN-based semiconductor devices and materials (24 papers), Semiconductor Quantum Structures and Devices (23 papers) and Quantum Dots Synthesis And Properties (15 papers). J. Woitok collaborates with scholars based in Germany, Belarus and Netherlands. J. Woitok's co-authors include M. Heuken, J. Geurts, H. Kalisch, Rolf A. Jansen, H. Behmenburg, K. Heime, J. J. Hérmans, J. Söllner, Andrei Vescan and J. Tümmler and has published in prestigious journals such as Journal of Applied Physics, Applied Surface Science and Thin Solid Films.

In The Last Decade

J. Woitok

49 papers receiving 280 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Woitok Germany 10 171 166 143 110 74 52 284
Franz Eberhard Germany 10 201 1.2× 193 1.2× 145 1.0× 87 0.8× 56 0.8× 22 318
J. Krueger United States 10 161 0.9× 224 1.3× 122 0.9× 153 1.4× 130 1.8× 15 346
U. K. Mishra United States 6 223 1.3× 325 2.0× 133 0.9× 127 1.2× 136 1.8× 15 388
Won-Jin Choi United States 9 261 1.5× 136 0.8× 170 1.2× 72 0.7× 48 0.6× 39 349
A. Mahajan United States 8 261 1.5× 172 1.0× 131 0.9× 69 0.6× 46 0.6× 16 326
Chih-Hsin Ko Taiwan 13 248 1.5× 122 0.7× 140 1.0× 79 0.7× 63 0.9× 28 351
K.L. Wang United States 10 265 1.5× 121 0.7× 156 1.1× 146 1.3× 51 0.7× 25 407
F. Huet France 13 333 1.9× 126 0.8× 208 1.5× 74 0.7× 56 0.8× 37 431
M. A. Khan United States 8 139 0.8× 144 0.9× 94 0.7× 191 1.7× 99 1.3× 15 335
L. Reißmann Germany 9 124 0.7× 256 1.5× 174 1.2× 106 1.0× 92 1.2× 14 332

Countries citing papers authored by J. Woitok

Since Specialization
Citations

This map shows the geographic impact of J. Woitok's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Woitok with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Woitok more than expected).

Fields of papers citing papers by J. Woitok

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Woitok. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Woitok. The network helps show where J. Woitok may publish in the future.

Co-authorship network of co-authors of J. Woitok

This figure shows the co-authorship network connecting the top 25 collaborators of J. Woitok. A scholar is included among the top collaborators of J. Woitok based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Woitok. J. Woitok is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wan, Qian, B. Jenichen, J. Woitok, et al.. (2012). Formation of a Monocrystalline, $M$-Plane AlN Layer by the Nitridation of $\gamma$-LiAlO$_{2}$(100). Applied Physics Express. 5(10). 105501–105501. 6 indexed citations
2.
Reuters, B., E. V. Lutsenko, G. P. Yablonskii, et al.. (2010). Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates. Journal of Crystal Growth. 312(11). 1823–1827. 13 indexed citations
3.
Behmenburg, H., N. Ketteniss, Dirk Fahle, et al.. (2010). In situ SiN passivation of AlInN/GaN heterostructures by MOVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 2104–2106. 8 indexed citations
4.
Ketteniss, N., H. Behmenburg, J. Woitok, et al.. (2010). Quaternary nitride heterostructure field effect transistors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 2001–2003. 12 indexed citations
5.
Behmenburg, H., N. Ketteniss, J. Woitok, et al.. (2009). Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 12 indexed citations
6.
Behmenburg, H., J. Woitok, W. Zander, et al.. (2009). Epitaxy and characterisation of AlInGaN heterostructures for HEMT application. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 6 indexed citations
7.
Behmenburg, H., Ten‐Chin Wen, Y. Dikme, et al.. (2008). Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates. Journal of Crystal Growth. 310(23). 4976–4978. 4 indexed citations
8.
Zubialevich, Vitaly Z., E. V. Lutsenko, G. P. Yablonskii, et al.. (2008). Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates. Journal of Applied Spectroscopy. 75(1). 96–103. 2 indexed citations
9.
Simbrunner, Clemens, K. Schmidegg, A. Bonanni, et al.. (2006). In‐situ and real‐time monitoring of MOCVD growth of III‐nitrides by simultaneous multi‐wavelength‐ellipsometry and X‐ray‐diffraction. physica status solidi (a). 203(7). 1704–1707. 10 indexed citations
10.
Das, Randip Kumar, M. K. Bera, Sudipto Chakraborty, et al.. (2006). Physico-chemical and electrical properties of rapid thermal oxides on Ge-rich SiGe heterolayers. Applied Surface Science. 253(3). 1323–1329. 4 indexed citations
11.
Simbrunner, Clemens, K. Schmidegg, A. Bonanni, et al.. (2006). In situ X-ray diffraction during MOCVD of III-nitrides: An optimized wobbling compensating evaluation algorithm. Journal of Crystal Growth. 298. 243–245. 6 indexed citations
12.
Woitok, J., et al.. (2005). Towards fast reciprocal space mapping. Powder Diffraction. 20(2). 125–127. 1 indexed citations
13.
Woitok, J.. (2004). Structural characterization of SiGe and SiGe:C heterostructures using a combination of X-ray scattering methods. Powder Diffraction. 19(1). 49–52. 2 indexed citations
14.
Dikme, Y., H. Kalisch, J. Woitok, et al.. (2003). Si(111) as alternative substrate for AlGaN/GaN HEMT. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2385–2388. 4 indexed citations
15.
Kalisch, H., et al.. (1998). Structural characterization of MOVPE grown ZnMgSSe/ZnSe heterostructures by HRXRD. Journal of Crystal Growth. 184-185. 134–138. 2 indexed citations
16.
Lakner, Hubert, et al.. (1997). Characterization of MOVPE grown InGaAsP superlattices for modulators by electron diffraction, X-ray diffraction and Z-contrast imaging. Journal of Crystal Growth. 170(1-4). 732–737. 1 indexed citations
17.
Hérmans, J. J., J. Woitok, J. Geurts, et al.. (1996). Optical investigation of Cl-doped ZnSe and ZnS Se1 − layers grown by metalorganic vapour phase epitaxy. Journal of Crystal Growth. 159(1-4). 363–367. 2 indexed citations
18.
Hövel, R., et al.. (1995). The n-type doping of and growth of two-dimensional electron gas structures with DEAlH-NMe3 as Al source. Journal of Crystal Growth. 146(1-4). 515–520. 1 indexed citations
19.
Söllner, J., et al.. (1995). Low-Pressure Metal-Organic-Vapor-Phase-Epitaxy (MOVPE) of ZnSSe with Different Precursors. Materials science forum. 182-184. 419–422. 1 indexed citations
20.
Heuken, M., M. Scholl, Andreas Schneider, J. Söllner, & J. Woitok. (1993). Correlation of room temperature photoluminescence to structural properties of ZnSSe/ZnSe superlattices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics. 74(9). 5880–5882. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Franz Eberhard Breakdown of academic impact, for papers by J. Krueger Breakdown of academic impact, for papers by U. K. Mishra Breakdown of academic impact, for papers by Won-Jin Choi Breakdown of academic impact, for papers by A. Mahajan Breakdown of academic impact, for papers by Chih-Hsin Ko Breakdown of academic impact, for papers by K.L. Wang Breakdown of academic impact, for papers by F. Huet Breakdown of academic impact, for papers by M. A. Khan Breakdown of academic impact, for papers by L. Reißmann
Rankless by CCL
2026