H. Protzmann

472 total citations
35 papers, 378 citations indexed

About

H. Protzmann is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Protzmann has authored 35 papers receiving a total of 378 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Condensed Matter Physics, 23 papers in Electrical and Electronic Engineering and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Protzmann's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor Quantum Structures and Devices (16 papers) and Semiconductor materials and devices (15 papers). H. Protzmann is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor Quantum Structures and Devices (16 papers) and Semiconductor materials and devices (15 papers). H. Protzmann collaborates with scholars based in Germany, Belarus and United States. H. Protzmann's co-authors include M. Heuken, M. Weyers, Frank Brunner, Michael Kneissl, A. Knauer, W. Stolz, A. Krost, Jörg Lorberth, J. Bläsing and E. O. Göbel and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Crystal Growth.

In The Last Decade

H. Protzmann

33 papers receiving 361 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Protzmann Germany 12 288 166 151 151 104 35 378
Kenji Shimoyama Japan 9 190 0.7× 234 1.4× 121 0.8× 165 1.1× 80 0.8× 14 381
Hideaki Zama Japan 12 220 0.8× 109 0.7× 77 0.5× 164 1.1× 129 1.2× 42 321
Fusaoki Uchikawa Japan 10 180 0.6× 108 0.7× 65 0.4× 163 1.1× 104 1.0× 31 333
T. Nishihara Japan 12 262 0.9× 102 0.6× 81 0.5× 203 1.3× 240 2.3× 24 423
J. Woodward United States 12 166 0.6× 182 1.1× 129 0.9× 157 1.0× 132 1.3× 35 376
S. M. Donovan United States 13 453 1.6× 367 2.2× 100 0.7× 158 1.0× 174 1.7× 38 551
S. A. Hatfield United Kingdom 11 154 0.5× 233 1.4× 101 0.7× 336 2.2× 203 2.0× 13 469
B. Neubauer Germany 13 225 0.8× 128 0.8× 117 0.8× 192 1.3× 109 1.0× 30 425
Chinkyo Kim South Korea 10 271 0.9× 120 0.7× 89 0.6× 255 1.7× 152 1.5× 49 408
Masaaki Onomura Japan 8 335 1.2× 164 1.0× 268 1.8× 95 0.6× 104 1.0× 20 404

Countries citing papers authored by H. Protzmann

Since Specialization
Citations

This map shows the geographic impact of H. Protzmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Protzmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Protzmann more than expected).

Fields of papers citing papers by H. Protzmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Protzmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Protzmann. The network helps show where H. Protzmann may publish in the future.

Co-authorship network of co-authors of H. Protzmann

This figure shows the co-authorship network connecting the top 25 collaborators of H. Protzmann. A scholar is included among the top collaborators of H. Protzmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Protzmann. H. Protzmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Köhler, K., et al.. (2011). Reactor dependent starting transients of doping profiles in MOVPE grown GaN. Journal of Crystal Growth. 321(1). 15–18. 7 indexed citations
2.
Schineller, B., et al.. (2003). InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80-450 K. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5137. 213–213. 1 indexed citations
3.
Beccard, R., et al.. (2002). Growth of AlInGaP in multiwafer planetary reactors(R). 3002. 575–578. 1 indexed citations
4.
Yablonskii, G. P., E. V. Lutsenko, Igor P. Marko, et al.. (2001). Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450-470 nm. physica status solidi (a). 188(1). 79–82. 6 indexed citations
5.
Yablonskii, G. P., E. V. Lutsenko, Igor P. Marko, et al.. (2001). Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm. Applied Physics Letters. 79(13). 1953–1955. 12 indexed citations
6.
Yablonskii, G. P., E. V. Lutsenko, Igor P. Marko, et al.. (2001). Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450–470 nm. physica status solidi (a). 188(1). 79–82.
7.
Yablonskii, G. P., E. V. Lutsenko, Igor P. Marko, et al.. (2000). Stimulated Emission, Electro- and Photoluminescence of InGaN/GaN EL-Test and SQW Heterostructures Grown by MOVPE. physica status solidi (a). 180(1). 149–155. 2 indexed citations
8.
Protzmann, H., et al.. (2000). Uniformity control of group-III nitrides grown on 5×3 inch Al2O3 substrates inch Planetary Reactors®. Journal of Crystal Growth. 221(1-4). 629–634. 4 indexed citations
9.
Krost, A., et al.. (2000). Indium nanowires in thick (InGaN) layers as determined by x-ray analysis. Applied Physics Letters. 76(11). 1395–1397. 14 indexed citations
10.
Heuken, M., et al.. (1999). Reproducibility and Uniformity of MOVPE Planetary Reactors® for the Growth of GaN Based Materials. MRS Proceedings. 572. 2 indexed citations
11.
Krost, A., et al.. (1999). Evaluation of strain and In content in (InGaN/GaN) multiquantum wells by x-ray analysis. Applied Physics Letters. 75(5). 689–691. 22 indexed citations
12.
Marko, Igor P., E. V. Lutsenko, G. P. Yablonskii, et al.. (1999). Influence of UV Light-Assisted Annealing on Optical Properties of InGaN/GaN Heterostructures Grown by MOVPE. physica status solidi (b). 216(1). 175–179. 6 indexed citations
13.
Bläsing, J., T. Riemann, J. Christen, et al.. (1999). Structural and Optical Analysis of (In, Ga)N Structures Grown by MOCVD. physica status solidi (b). 216(1). 315–320. 5 indexed citations
14.
Protzmann, H., et al.. (1999). In Situ Monitoring of GaN Growth in Multiwafer MOVPE Reactors. physica status solidi (a). 176(1). 727–731. 11 indexed citations
15.
Marko, Igor P., E. V. Lutsenko, G. P. Yablonskii, et al.. (1999). High-Temperature Lasing in InGaN/GaN Multiquantum Well Heterostructures. physica status solidi (b). 216(1). 491–494. 2 indexed citations
16.
Beccard, R., et al.. (1998). MOCVD technology for the production of highly efficient GaAlP/GaAs/Ge solar cells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3419. 34190A–34190A. 1 indexed citations
17.
Protzmann, H., et al.. (1996). Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH). Journal of Electronic Materials. 25(3). 443–448. 3 indexed citations
18.
19.
Protzmann, H., T. Marschner, W. Stolz, et al.. (1993). Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors. Journal of Crystal Growth. 129(1-2). 37–44. 18 indexed citations
20.
Protzmann, H., et al.. (1992). In-situ formation of As-H functions by β-elimination of specific metalorganic arsenic compounds for the MOVPE of III/V semiconductors. Journal of Crystal Growth. 124(1-4). 136–141. 13 indexed citations

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