N. Teraguchi

1.5k total citations
47 papers, 1.2k citations indexed

About

N. Teraguchi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, N. Teraguchi has authored 47 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 22 papers in Condensed Matter Physics. Recurrent topics in N. Teraguchi's work include GaN-based semiconductor devices and materials (22 papers), Semiconductor Quantum Structures and Devices (15 papers) and Chalcogenide Semiconductor Thin Films (13 papers). N. Teraguchi is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Semiconductor Quantum Structures and Devices (15 papers) and Chalcogenide Semiconductor Thin Films (13 papers). N. Teraguchi collaborates with scholars based in Japan, United States and United Kingdom. N. Teraguchi's co-authors include Yasushi Nanishi, Akira Suzuki, Yoshiki Saito, Tsutomu Araki, H. Morkoç̌, Makoto Konagai, H. Asahi, S. Strite, Yikai Zhou and A. Salvador and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. Teraguchi

46 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Teraguchi Japan 18 763 605 580 468 431 47 1.2k
T. Metzger Germany 10 935 1.2× 609 1.0× 424 0.7× 489 1.0× 395 0.9× 16 1.3k
A. Yoshikawa Japan 22 1.1k 1.4× 855 1.4× 541 0.9× 653 1.4× 631 1.5× 89 1.5k
S. B. Fleischer United States 12 1.0k 1.4× 446 0.7× 442 0.8× 583 1.2× 673 1.6× 20 1.4k
S. Krishnankutty United States 16 1.0k 1.4× 417 0.7× 395 0.7× 576 1.2× 429 1.0× 31 1.2k
G. Nataf France 15 810 1.1× 571 0.9× 402 0.7× 445 1.0× 363 0.8× 31 1.1k
S. X. Li United States 12 1.0k 1.3× 772 1.3× 572 1.0× 667 1.4× 516 1.2× 17 1.5k
I. K. Shmagin United States 11 795 1.0× 419 0.7× 391 0.7× 389 0.8× 360 0.8× 16 1.0k
B. Goldenberg United States 17 1.4k 1.8× 671 1.1× 507 0.9× 695 1.5× 740 1.7× 31 1.6k
C. J. Sun United States 21 1.4k 1.8× 592 1.0× 591 1.0× 666 1.4× 516 1.2× 38 1.6k
Mamoru Imade Japan 20 1.2k 1.5× 775 1.3× 432 0.7× 771 1.6× 281 0.7× 91 1.3k

Countries citing papers authored by N. Teraguchi

Since Specialization
Citations

This map shows the geographic impact of N. Teraguchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Teraguchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Teraguchi more than expected).

Fields of papers citing papers by N. Teraguchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Teraguchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Teraguchi. The network helps show where N. Teraguchi may publish in the future.

Co-authorship network of co-authors of N. Teraguchi

This figure shows the co-authorship network connecting the top 25 collaborators of N. Teraguchi. A scholar is included among the top collaborators of N. Teraguchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Teraguchi. N. Teraguchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Miyanishi, S., N. Teraguchi, K. Sakuno, et al.. (2007). Huge magnetoresistive effects using space charge limited current in ZnO∕SiO2 system. Applied Physics Letters. 91(19). 4 indexed citations
2.
Choi, Sungwoo, Yi Zhou, Shūichi Emura, et al.. (2006). Magnetic, optical and electrical properties of GaN and AlN doped with rare‐earth element Gd. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 2250–2253. 11 indexed citations
3.
Choi, Sungwoo, Shūichi Emura, S. Kimura, et al.. (2005). Emission spectra from AlN and GaN doped with rare earth elements. Journal of Alloys and Compounds. 408-412. 717–720. 24 indexed citations
4.
Yamaguchi, Tomohiro, Yoshiki Saito, Kenji Kano, et al.. (2003). The c-axis and a-axis orientations in InN grown directly on (0001) sapphire substrate by rf-MBE. 77. 643–646. 1 indexed citations
5.
Hashimoto, Masahiko, Shūichi Emura, Hidekazu Tanaka, et al.. (2003). Local structure of rare‐earth‐doped diluted magnetic semiconductor GaGdN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2650–2653. 13 indexed citations
6.
Teraguchi, N., Akira Suzuki, Yasushi Nanishi, et al.. (2002). Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy. Solid State Communications. 122(12). 651–653. 137 indexed citations
7.
Yamaguchi, Tomohiro, Tsutomu Araki, Yoshiki Saito, et al.. (2002). Effect of sapphire substrate nitridation on determining rotation domain in GaN growth. Journal of Crystal Growth. 237-239. 993–997. 9 indexed citations
8.
Teraguchi, N., Akira Suzuki, & Yasushi Nanishi. (2002). Growth and Characterization of GaGdN and AlGdN on SiC by RF-MBE. Materials science forum. 389-393. 1477–1480. 7 indexed citations
9.
Saito, Yoshiki, Yoichi Tanabe, Tomohiro Yamaguchi, et al.. (2001). Polarity of High-Quality Indium Nitride Grown by RF Molecular Beam Epitaxy. physica status solidi (b). 228(1). 13–16. 14 indexed citations
10.
Koide, Yasuo, Tsuyoshi Kawakami, Masanori Murakami, et al.. (1998). Schottky barrier heights of contact metals to p-type ZnSe. Journal of Electronic Materials. 27(6). 772–775. 1 indexed citations
11.
Kawakami, Tsuyoshi, Yasuo Koide, N. Teraguchi, et al.. (1998). Electrical properties at p-ZnSe/metal interfaces. Journal of Electronic Materials. 27(8). 929–935.
12.
Koide, Yasuo, et al.. (1996). Effects of surface cleaning on electrical properties for Ni contacts to p-type ZnSe. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 1812–1818. 13 indexed citations
13.
Tadanaga, O., Yasuo Koide, Kazuya Hashimoto, et al.. (1996). Dependence of Electrical Properties on Work Functions of Metals Contacting to p-type ZnSe. Japanese Journal of Applied Physics. 35(3R). 1657–1657. 13 indexed citations
14.
Teraguchi, N., Hideaki Mouri, Y. Tomomura, et al.. (1995). Growth of ZnSe/MgS strained-layer superlattices by molecular beam epitaxy. Applied Physics Letters. 67(20). 2945–2947. 29 indexed citations
15.
Strite, S., D. Chandrasekhar, David J. Smith, et al.. (1993). Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe. Journal of Crystal Growth. 127(1-4). 204–208. 84 indexed citations
16.
Gao, Guangjun, et al.. (1993). AlxGa1−xAs/AlyGa1−yAs and GaAs pseudo-heterojunction bipolar transistors with lateral emitter resistor. Applied Physics Letters. 62(9). 994–996. 1 indexed citations
17.
Sydor, Michael, et al.. (1992). Application of differential photoreflectance spectroscopy in selective modulation of a layer within multilayer device structures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1678. 159–159. 1 indexed citations
18.
Salvador, A., N. Teraguchi, J. Reed, & H. Morkoç̌. (1992). Optical transmission of asymmetric coupled quantum wells under crossed electric and magnetic fields. Physical review. B, Condensed matter. 46(19). 12757–12760. 1 indexed citations
19.
Teraguchi, N., et al.. (1991). Growth and characterization of Ga2Se3 by molecular beam epitaxy. Journal of Crystal Growth. 115(1-4). 798–801. 19 indexed citations
20.
Konagai, Makoto, et al.. (1989). Atomic Layer Epitaxy of Wide Bandgap II-VI Compound Semiconductor Superlattices. MRS Proceedings. 161. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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