G. Kamler

1.2k total citations
59 papers, 902 citations indexed

About

G. Kamler is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, G. Kamler has authored 59 papers receiving a total of 902 indexed citations (citations by other indexed papers that have themselves been cited), including 57 papers in Condensed Matter Physics, 25 papers in Electrical and Electronic Engineering and 20 papers in Mechanics of Materials. Recurrent topics in G. Kamler's work include GaN-based semiconductor devices and materials (56 papers), Metal and Thin Film Mechanics (20 papers) and Semiconductor materials and devices (19 papers). G. Kamler is often cited by papers focused on GaN-based semiconductor devices and materials (56 papers), Metal and Thin Film Mechanics (20 papers) and Semiconductor materials and devices (19 papers). G. Kamler collaborates with scholars based in Poland, Netherlands and United States. G. Kamler's co-authors include I. Grzegory, B. Łucznik, J.L. Weyher, S. Porowski, Sławomir Podsiadło, Michał Boćkowski, W. Gębicki, T. Szyszko, J. Borysiuk and G. Nowak and has published in prestigious journals such as Applied Physics Letters, Journal of Alloys and Compounds and IEEE Transactions on Electron Devices.

In The Last Decade

G. Kamler

58 papers receiving 873 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Kamler Poland 17 781 418 368 350 264 59 902
Katsushi Akita Japan 13 818 1.0× 271 0.6× 391 1.1× 345 1.0× 382 1.4× 25 904
Shinya Nunoue Japan 15 932 1.2× 435 1.0× 380 1.0× 393 1.1× 479 1.8× 61 1.1k
L. Sierzputowski Poland 13 801 1.0× 421 1.0× 376 1.0× 306 0.9× 221 0.8× 17 904
J. Garczyński Poland 12 766 1.0× 410 1.0× 362 1.0× 289 0.8× 212 0.8× 14 867
S. Dalmasso France 14 846 1.1× 486 1.2× 406 1.1× 373 1.1× 327 1.2× 42 1.0k
Takashi Kyono Japan 11 718 0.9× 242 0.6× 255 0.7× 238 0.7× 480 1.8× 19 806
T. Metzger Germany 10 935 1.2× 609 1.5× 489 1.3× 424 1.2× 395 1.5× 16 1.3k
A. Sohmer Germany 11 733 0.9× 282 0.7× 319 0.9× 182 0.5× 403 1.5× 21 815
Werner Bergbauer Germany 13 764 1.0× 545 1.3× 390 1.1× 235 0.7× 290 1.1× 21 900
S. Krishnankutty United States 16 1.0k 1.3× 417 1.0× 576 1.6× 395 1.1× 429 1.6× 31 1.2k

Countries citing papers authored by G. Kamler

Since Specialization
Citations

This map shows the geographic impact of G. Kamler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Kamler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Kamler more than expected).

Fields of papers citing papers by G. Kamler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Kamler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Kamler. The network helps show where G. Kamler may publish in the future.

Co-authorship network of co-authors of G. Kamler

This figure shows the co-authorship network connecting the top 25 collaborators of G. Kamler. A scholar is included among the top collaborators of G. Kamler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Kamler. G. Kamler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Khachariya, Dolar, Seiji Mita, M. Hayden Breckenridge, et al.. (2023). Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor. Applied Physics Express. 16(3). 31006–31006. 5 indexed citations
2.
Schiavon, Dario, et al.. (2021). Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry. Materials. 14(23). 7364–7364. 9 indexed citations
3.
Domagała, J. Z., Julita Smalc‐Koziorowska, Małgorzata Iwińska, et al.. (2016). Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates. Journal of Crystal Growth. 456. 80–85. 16 indexed citations
4.
Sochacki, Tomasz, Mikolaj Amilusik, Małgorzata Iwińska, et al.. (2014). Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed. physica status solidi (b). 252(5). 1172–1179. 26 indexed citations
5.
Sochacki, Tomasz, Zachary Bryan, Mikolaj Amilusik, et al.. (2013). Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds. Applied Physics Express. 6(7). 75504–75504. 54 indexed citations
6.
Boćkowski, Michał, I. Grzegory, B. Łucznik, et al.. (2010). High nitrogen pressure solution (HNPS) growth of GaN on 2 inch free standing GaN substrates. Science in China. Series E, Technological sciences. 54(1). 42–46. 7 indexed citations
7.
Łucznik, B., et al.. (2009). Bulk GaN crystals and wafers grown by HVPE without intentional doping. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 10 indexed citations
8.
Leszczyński, M., I. Grzegory, Michał Boćkowski, et al.. (2008). Secrets of GaN substrates properties for high luminousity of InGaN quantum wells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6910. 69100G–69100G. 1 indexed citations
9.
Perlin, P., Łucja Marona, R. Czernecki, et al.. (2008). Fabrication and properties of GaN-based lasers. Journal of Crystal Growth. 310(17). 3979–3982. 13 indexed citations
10.
Teisseyre, H., A. Khachapuridze, C. Skierbiszewski, et al.. (2008). Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2173–2175. 1 indexed citations
11.
Kamler, G., Julita Smalc‐Koziorowska, Michał J. Woźniak, et al.. (2006). Selective etching of dislocations in violet-laser diode structures. Journal of Crystal Growth. 293(1). 18–21. 13 indexed citations
12.
Weyher, J.L., G. Kamler, G. Nowak, et al.. (2005). Defects in GaN single crystals and homoepitaxial structures. Journal of Crystal Growth. 281(1). 135–142. 22 indexed citations
13.
Łucznik, B., I. Grzegory, Michał Boćkowski, et al.. (2005). Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates. Journal of Crystal Growth. 281(1). 38–46. 50 indexed citations
14.
Kamler, G., J. Borysiuk, J.L. Weyher, et al.. (2005). Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers. Journal of Crystal Growth. 282(1-2). 45–48. 13 indexed citations
15.
Boćkowski, Michał, I. Grzegory, B. Łucznik, et al.. (2004). Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method. physica status solidi (b). 241(12). 2685–2688. 1 indexed citations
16.
Weyher, J.L., Ł. Macht, G. Kamler, J. Borysiuk, & I. Grzegory. (2003). Characterization of GaN single crystals by defect‐selective etching. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 821–826. 23 indexed citations
17.
Paszkowicz, W., Michael Knapp, Sławomir Podsiadło, G. Kamler, & J.B. Pełka. (2002). Lattice Parameters of Aluminium Nitride in the Range 10-291 K. Acta Physica Polonica A. 101(5). 781–785. 15 indexed citations
18.
Paszkowicz, W., Michael Knapp, J. Z. Domagała, G. Kamler, & Sławomir Podsiadło. (2001). Low-temperature thermal expansion of Mg3N2. Journal of Alloys and Compounds. 328(1-2). 272–275. 7 indexed citations
19.
Kamler, G., et al.. (2000). Formation and Thermal Decomposition of Gallium Oxynitride Compounds. Journal of Thermal Analysis and Calorimetry. 61(3). 873–877. 14 indexed citations
20.
Gębicki, W., et al.. (2000). Raman scattering study of Ga1−xMnxN crystals. Applied Physics Letters. 76(26). 3870–3872. 88 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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