Benjamı́n Iñı́guez

4.1k total citations
241 papers, 3.0k citations indexed

About

Benjamı́n Iñı́guez is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Benjamı́n Iñı́guez has authored 241 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 234 papers in Electrical and Electronic Engineering, 19 papers in Biomedical Engineering and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Benjamı́n Iñı́guez's work include Advancements in Semiconductor Devices and Circuit Design (178 papers), Semiconductor materials and devices (155 papers) and Silicon Carbide Semiconductor Technologies (100 papers). Benjamı́n Iñı́guez is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (178 papers), Semiconductor materials and devices (155 papers) and Silicon Carbide Semiconductor Technologies (100 papers). Benjamı́n Iñı́guez collaborates with scholars based in Spain, Germany and Mexico. Benjamı́n Iñı́guez's co-authors include A. Cerdeira, M. Estrada, Alexander Kloes, Oana Moldovan, F. Lime, Lluı́s F. Marsal, Tor A. Fjeldly, Thomas Holtij, Mike Schwarz and Hamdy Abd El Hamid and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Biosensors and Bioelectronics.

In The Last Decade

Benjamı́n Iñı́guez

219 papers receiving 2.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Benjamı́n Iñı́guez Spain	29	2.8k	501	252	247	201	241	3.0k
A. Cerdeira Mexico	24	2.6k 0.9×	448 0.9×	332 1.3×	240 1.0×	64 0.3×	187	2.7k
M. Estrada Mexico	27	2.9k 1.0×	502 1.0×	467 1.9×	598 2.4×	59 0.3×	203	3.0k
F. Balestra France	29	3.5k 1.3×	489 1.0×	366 1.5×	260 1.1×	92 0.5×	206	3.7k
Paweł E. Malinowski Belgium	24	1.2k 0.4×	392 0.8×	570 2.3×	260 1.1×	270 1.3×	87	1.5k
L. Mariucci Italy	26	2.1k 0.8×	548 1.1×	642 2.5×	290 1.2×	84 0.4×	211	2.3k
Abhinav Kranti India	31	3.3k 1.2×	848 1.7×	248 1.0×	36 0.1×	254 1.3×	157	3.4k
W. Clemens Germany	15	741 0.3×	243 0.5×	169 0.7×	250 1.0×	125 0.6×	31	1.1k
Yan‐Kuin Su Taiwan	22	1.3k 0.5×	259 0.5×	630 2.5×	109 0.4×	466 2.3×	199	1.8k
Ying‐Jay Yang Taiwan	20	759 0.3×	309 0.6×	467 1.9×	132 0.5×	272 1.4×	57	1.2k
Lei Lü China	23	1.4k 0.5×	233 0.5×	858 3.4×	249 1.0×	135 0.7×	177	1.8k

Countries citing papers authored by Benjamı́n Iñı́guez

Since Specialization

Citations

This map shows the geographic impact of Benjamı́n Iñı́guez's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benjamı́n Iñı́guez with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benjamı́n Iñı́guez more than expected).

Fields of papers citing papers by Benjamı́n Iñı́guez

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benjamı́n Iñı́guez. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benjamı́n Iñı́guez. The network helps show where Benjamı́n Iñı́guez may publish in the future.

Co-authorship network of co-authors of Benjamı́n Iñı́guez

This figure shows the co-authorship network connecting the top 25 collaborators of Benjamı́n Iñı́guez. A scholar is included among the top collaborators of Benjamı́n Iñı́guez based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Benjamı́n Iñı́guez. Benjamı́n Iñı́guez is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Cerdeira, A., et al.. (2024). Analysis of the mobility behavior of MOS2 2D FETs. Solid-State Electronics. 224. 109032–109032.

Calvet, Laurie E., et al.. (2024). Simulating Organic Thin Film Transistors Using Multilayer Perceptron Regression Models to Enable Circuit Design. Advanced Electronic Materials. 10(12). 1 indexed citations

Han, Yi, Benjamı́n Iñı́guez, Alexander Kloes, et al.. (2024). Roadmap for Schottky barrier transistors. Nano Futures. 8(4). 42001–42001. 5 indexed citations

Estrada, M., et al.. (2024). A Unified Physics-Based Model for Analyzing Hysteresis in Organic Thin-Film Transistors. 3(11). 502–507.

Darbandy, Ghader, Mike Schwarz, Yi Han, et al.. (2023). Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures. Solid-State Electronics. 207. 108686–108686. 6 indexed citations

Zschieschang, Ute, et al.. (2023). Compact model for the bias-depended low-frequency noise in organic thin-film transistors due to carrier-number and mobility-fluctuation effects. Organic Electronics. 120. 106846–106846. 5 indexed citations

Tseng, Hsin, Benjamı́n Iñı́guez, Karl Leo, et al.. (2023). Device Physics, Modeling and Simulation of Organic Electrochemical Transistors. IEEE Journal of the Electron Devices Society. 11. 665–671. 7 indexed citations

Darbandy, Ghader, Mike Schwarz, Jens Trommer, et al.. (2021). Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors. IEEE Journal of the Electron Devices Society. 10. 416–423. 12 indexed citations

Li, Guoli, Nicolás André, Ying Xia, et al.. (2020). Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors. IEEE Electron Device Letters. 42(1). 94–97. 5 indexed citations

10.

Iñı́guez, Benjamı́n, et al.. (2018). Al_xGaN_1-x/AlN/GaN and DH-Al_xGaN_1-X/GaN HEMTs Threshold Voltage Model. physica status solidi (a). 1 indexed citations

11.

Graef, Michael, et al.. (2016). Rapid NEGF-based calculation of ballistic current in ultra-short DG MOSFETs for circuit simulation. 7. 2 indexed citations

12.

Rodríguez, R., et al.. (2015). Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self‐heating effects by substrate materials. physica status solidi (a). 212(5). 1130–1136. 10 indexed citations

13.

Holtij, Thomas, et al.. (2013). Unified charge model for short-channel junctionless double gate MOSFETs. International Conference Mixed Design of Integrated Circuits and Systems. 75–80. 1 indexed citations

14.

Schwarz, Mike, Thomas Holtij, Alexander Kloes, & Benjamı́n Iñı́guez. (2012). Two-dimensional physics-based modeling of dopant-segregated Schottky barrier UTB MOSFETs. International Conference Mixed Design of Integrated Circuits and Systems. 88–93. 2 indexed citations

15.

Iñı́guez, Benjamı́n, et al.. (2012). Simulation and modeling of nanoscale multiple-gate SOI MOSFETs. International Conference Mixed Design of Integrated Circuits and Systems. 25–29. 1 indexed citations

16.

Schwarz, Mike, Thomas Holtij, Alexander Kloes, & Benjamı́n Iñı́guez. (2011). 2D analytical framework for compact modeling of the electrostatics in undoped DG MOSFETs. International Conference Mixed Design of Integrated Circuits and Systems. 405–410. 3 indexed citations

17.

Alvarado, J., Benjamı́n Iñı́guez, M. Estrada, Denis Flandre, & A. Cerdeira. (2009). Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation. Digital Access to Libraries. 35 indexed citations

18.

Shur, M. S., et al.. (2006). Compact Iterative Field Effect Transistor Model. TechConnect Briefs. 3(2006). 648–651.

19.

Souza, Michelly de, Marcelo Antonio Pavanello, Benjamı́n Iñı́guez, & Denis Flandre. (2004). A Fully Analytical Continuous Model for Graded-Channel SOI MOSFET for Analog Applications. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 27–32. 1 indexed citations

20.

Fjeldly, Tor A., et al.. (2004). Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime. Journal of Telecommunications and Information Technology. 70–79. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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