Nadim Chowdhury

2.9k total citations · 1 hit paper
44 papers, 1.3k citations indexed

About

Nadim Chowdhury is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Nadim Chowdhury has authored 44 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 33 papers in Condensed Matter Physics and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Nadim Chowdhury's work include GaN-based semiconductor devices and materials (33 papers), Semiconductor materials and devices (24 papers) and Silicon Carbide Semiconductor Technologies (15 papers). Nadim Chowdhury is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), Semiconductor materials and devices (24 papers) and Silicon Carbide Semiconductor Technologies (15 papers). Nadim Chowdhury collaborates with scholars based in United States, Bangladesh and Japan. Nadim Chowdhury's co-authors include Tomás Palacios, Qingyun Xie, Yuhao Zhang, Mengyang Yuan, Kai Cheng, Han Wui Then, Daniel Piedra, Min Sun, Nitul S. Rajput and Koon Hoo Teo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Alloys and Compounds.

In The Last Decade

Nadim Chowdhury

37 papers receiving 1.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

2021 207 citations Koon Hoo Teo, Yuhao Zhang et al. Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Nadim Chowdhury United States	17	1.1k	1.0k	483	239	217	44	1.3k
Song Yang Hong Kong	18	1.0k 0.9×	858 0.8×	517 1.1×	258 1.1×	174 0.8×	46	1.2k
Meng Qi United States	11	824 0.8×	769 0.8×	488 1.0×	251 1.1×	182 0.8×	33	1.1k
Brian Romanczyk United States	20	1.1k 1.1×	894 0.9×	482 1.0×	282 1.2×	373 1.7×	58	1.3k
Hirokuni Tokuda Japan	17	931 0.9×	750 0.7×	553 1.1×	255 1.1×	187 0.9×	71	1.1k
Minhan Mi China	19	936 0.9×	745 0.7×	430 0.9×	181 0.8×	225 1.0×	91	991
S. Vicknesh Singapore	19	748 0.7×	732 0.7×	396 0.8×	224 0.9×	259 1.2×	47	1.0k
Yi Pei United States	20	1.1k 1.0×	883 0.9×	448 0.9×	230 1.0×	290 1.3×	57	1.2k
Matthew Guidry United States	20	1.1k 1.0×	831 0.8×	474 1.0×	256 1.1×	341 1.6×	57	1.2k
Yoshiharu Takada Japan	14	1.3k 1.2×	1.1k 1.1×	599 1.2×	266 1.1×	265 1.2×	32	1.4k
Masakazu Kanechika Japan	16	781 0.7×	766 0.8×	352 0.7×	175 0.7×	149 0.7×	39	948

Countries citing papers authored by Nadim Chowdhury

Since Specialization

Citations

This map shows the geographic impact of Nadim Chowdhury's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nadim Chowdhury with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nadim Chowdhury more than expected).

Fields of papers citing papers by Nadim Chowdhury

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nadim Chowdhury. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nadim Chowdhury. The network helps show where Nadim Chowdhury may publish in the future.

Co-authorship network of co-authors of Nadim Chowdhury

This figure shows the co-authorship network connecting the top 25 collaborators of Nadim Chowdhury. A scholar is included among the top collaborators of Nadim Chowdhury based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nadim Chowdhury. Nadim Chowdhury is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yagyu, Eiji, et al.. (2025). Inverse Design of AlGaN/GaN HEMT RF Device with Source Connected Field Plate. Advanced Theory and Simulations. 8(4).

Niroula, John, Qingyun Xie, Nitul S. Rajput, et al.. (2024). High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C. Applied Physics Letters. 124(20). 12 indexed citations

Xie, Qingyun, John Niroula, Nitul S. Rajput, et al.. (2024). Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure. Applied Physics Letters. 124(24). 1 indexed citations

Xie, Qingyun, Mengyang Yuan, Eiji Yagyu, et al.. (2024). System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity. IEEE Journal of the Electron Devices Society. 13. 730–736.

Yuan, Mengyang, John Niroula, Qingyun Xie, et al.. (2023). Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation. IEEE Electron Device Letters. 44(7). 1068–1071. 25 indexed citations

Xie, Qingyun, Mengyang Yuan, John Niroula, et al.. (2023). Highly Scaled GaN Complementary Technology on a Silicon Substrate. IEEE Transactions on Electron Devices. 70(4). 2121–2128. 19 indexed citations

Xie, Qingyun, Mengyang Yuan, Eiji Yagyu, et al.. (2023). AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity. IEEE Transactions on Electron Devices. 70(11). 5570–5576. 12 indexed citations

Yuan, Mengyang, Qingyun Xie, Kai Fu, et al.. (2022). GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform. IEEE Electron Device Letters. 43(11). 1842–1845. 24 indexed citations

Yuan, Mengyang, Qingyun Xie, John Niroula, Nadim Chowdhury, & Tomás Palacios. (2022). GaN Memory Operational at 300 °C. IEEE Electron Device Letters. 43(12). 2053–2056. 13 indexed citations

10.

Chowdhury, Nadim, Qingyun Xie, & Tomás Palacios. (2022). Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si. IEEE Electron Device Letters. 43(4). 545–548. 36 indexed citations

11.

Chowdhury, Nadim, Qingyun Xie, & Tomás Palacios. (2022). Self-Aligned E-Mode GaN p-Channel FinFET With ION > 100 mA/mm and ION/IOFF > 10⁷. IEEE Electron Device Letters. 43(3). 358–361. 34 indexed citations

12.

Teo, Koon Hoo, Yuhao Zhang, Nadim Chowdhury, et al.. (2021). Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects. Journal of Applied Physics. 130(16). 207 indexed citations breakdown →

13.

Xie, Qingyun, Nadim Chowdhury, Ahmad Zubair, et al.. (2021). NbN-Gated GaN Transistor Technology for Applications in Quantum Computing Systems. Symposium on VLSI Technology. 1–2. 5 indexed citations

14.

Bader, Samuel James, Hyunjea Lee, Reet Chaudhuri, et al.. (2020). Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices. IEEE Transactions on Electron Devices. 67(10). 4010–4020. 106 indexed citations

15.

Chowdhury, Nadim, Qingyun Xie, Mengyang Yuan, et al.. (2020). Regrowth-Free GaN-Based Complementary Logic on a Si Substrate. IEEE Electron Device Letters. 41(6). 820–823. 97 indexed citations

16.

Chowdhury, Nadim, Jori Lemettinen, Qingyun Xie, et al.. (2019). p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si. IEEE Electron Device Letters. 40(7). 1036–1039. 114 indexed citations

17.

Chowdhury, Nadim, et al.. (2019). Superior Performance of 5-nm Gate Length GaN Nanowire nFET for Digital Logic Applications. IEEE Electron Device Letters. 40(6). 874–877. 13 indexed citations

18.

Lemettinen, Jori, et al.. (2019). Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al_0.8Ga_0.2N/AlN on SiC With Drain Current Over 100 mA/mm. IEEE Electron Device Letters. 40(8). 1245–1248. 37 indexed citations

19.

Fakhrul, Takian, Rubayyat Mahbub, Nadim Chowdhury, Quazi D. M. Khosru, & Ahmed Sharif. (2014). Structural, dielectric and magnetic properties of Ta-substituted Bi0.8La0.2FeO3 multiferroics. Journal of Alloys and Compounds. 622. 471–476. 16 indexed citations

20.

Chowdhury, Nadim, et al.. (2013). Negative Capacitance Tunnel Field Effect Transistor: A Novel Device With Low Subthreshold Swing and High On Current. ECS Meeting Abstracts. MA2013-02(23). 1849–1849.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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