Nelson Braga

547 total citations
19 papers, 459 citations indexed

About

Nelson Braga is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Nelson Braga has authored 19 papers receiving a total of 459 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 15 papers in Condensed Matter Physics and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Nelson Braga's work include Semiconductor materials and devices (16 papers), GaN-based semiconductor devices and materials (15 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Nelson Braga is often cited by papers focused on Semiconductor materials and devices (16 papers), GaN-based semiconductor devices and materials (15 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Nelson Braga collaborates with scholars based in United States and Switzerland. Nelson Braga's co-authors include R. Mickevičius, Hiu Yung Wong, Tomás Palacios, Lili Yu, Min Sun, G. Simin, R. Gaška, M. S. Shur, M. Asif Khan and Sameer Joglekar and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Nelson Braga

18 papers receiving 431 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Nelson Braga United States	9	386	354	180	100	88	19	459
Manyam Pilla United States	9	337 0.9×	291 0.8×	166 0.9×	95 0.9×	58 0.7×	10	384
Rimma Zhytnytska Germany	10	394 1.0×	333 0.9×	177 1.0×	80 0.8×	55 0.6×	18	416
Towhidur Razzak United States	12	344 0.9×	293 0.8×	217 1.2×	54 0.5×	92 1.0×	22	403
Yingkui Zheng China	14	474 1.2×	360 1.0×	249 1.4×	128 1.3×	109 1.2×	25	510
Osamu Ishiguro Japan	9	479 1.2×	407 1.1×	232 1.3×	83 0.8×	93 1.1×	12	513
Joseph J. Freedsman Japan	14	442 1.1×	374 1.1×	286 1.6×	64 0.6×	124 1.4×	21	493
Tomohiro Nozawa Japan	5	331 0.9×	334 0.9×	214 1.2×	122 1.2×	156 1.8×	5	457
S. S. Su China	10	250 0.6×	250 0.7×	205 1.1×	69 0.7×	72 0.8×	25	341
Joachim Wuerfl Germany	10	370 1.0×	379 1.1×	158 0.9×	80 0.8×	72 0.8×	23	466

Countries citing papers authored by Nelson Braga

Since Specialization

Citations

This map shows the geographic impact of Nelson Braga's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nelson Braga with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nelson Braga more than expected).

Fields of papers citing papers by Nelson Braga

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nelson Braga. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nelson Braga. The network helps show where Nelson Braga may publish in the future.

Co-authorship network of co-authors of Nelson Braga

This figure shows the co-authorship network connecting the top 25 collaborators of Nelson Braga. A scholar is included among the top collaborators of Nelson Braga based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nelson Braga. Nelson Braga is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Wong, Hiu Yung, Nelson Braga, & R. Mickevičius. (2018). Enhancement-Mode Recessed Gate and Cascode Gate Junctionless Nanowire With Low-Leakage and High-Drive Current. IEEE Transactions on Electron Devices. 65(9). 4004–4008. 14 indexed citations

Yong, Wong Hin, et al.. (2018). Normally-OFF dual-gate Ga2O3 planar MOSFET and FinFET with high ION and BV. 379–382. 14 indexed citations

Wong, Hiu Yung, Nelson Braga, & R. Mickevičius. (2017). Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation. Diamond and Related Materials. 80. 14–17. 10 indexed citations

Wong, Hiu Yung, Nelson Braga, & R. Mickevičius. (2017). A physical model of the abnormal behavior of hydrogen-terminated Diamond MESFET. 333–336. 3 indexed citations

Wong, Hiu Yung, Nelson Braga, & R. Mickevičius. (2016). AlGaN/GaN rake-gate HFET: A novel normally-off HFET based on stress and layout engineering. 61–64. 1 indexed citations

Wong, Hiu Yung, et al.. (2016). Quantum correction in AlGaN/GaN transistor simulations using Modified Local Density Approximation (MLDA). 239–242. 1 indexed citations

Wong, Hiu Yung, Nelson Braga, & R. Mickevičius. (2016). Normally-Off GaN HFET Based on Layout and Stress Engineering. IEEE Electron Device Letters. 37(12). 1621–1624. 7 indexed citations

Moroz, Victor, Hiu Yung Wong, Munkang Choi, et al.. (2016). The Impact of Defects on GaN Device Behavior: Modeling Dislocations, Traps, and Pits. ECS Journal of Solid State Science and Technology. 5(4). P3142–P3148. 31 indexed citations

Han, Jin‐Woo, Hiu Yung Wong, Dong‐Il Moon, Nelson Braga, & M. Meyyappan. (2016). Stringer Gate FinFET on Bulk Substrate. IEEE Transactions on Electron Devices. 63(9). 3432–3438. 11 indexed citations

10.

Sun, Min, Hiu Yung Wong, Yuxuan Lin, et al.. (2015). Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes. IEEE Transactions on Electron Devices. 62(7). 2155–2161. 138 indexed citations

11.

Wong, Hiu Yung, Min Sun, Sameer Joglekar, et al.. (2015). Design space and origin of off-state leakage in GaN vertical power diodes. The HKU Scholars Hub (University of Hong Kong). 35.1.1–35.1.4. 93 indexed citations

12.

Wong, Hiu Yung, Nelson Braga, R. Mickevičius, & Jie Liu. (2015). Study of the effects of barrier and passivation nitride stresses on AlGaN/GaN HEMT performance using TCAD simulation. 24–27. 6 indexed citations

13.

Wong, Hiu Yung, Nelson Braga, R. Mickevičius, Feng Gao, & Tomás Palacios. (2014). Study of AlGaN/GaN HEMT degradation through TCAD simulations. 97–100. 2 indexed citations

14.

Gaška, R., G. Simin, Wong Hin Yong, et al.. (2011). Insulated-Gate Integrated III-Nitride RF Switches. 1–4.

15.

Braga, Nelson, R. Mickevičius, M. S. Shur, et al.. (2005). Simulation of gate lag and current collapse in GaN heterojunction field effect transistors. 40. 287–290. 4 indexed citations

16.

Braga, Nelson, R. Mickevičius, R. Gaška, et al.. (2005). Edge trapping mechanism of current collapse in III-N FETs. 229. 815–818. 6 indexed citations

17.

Braga, Nelson, et al.. (2005). Non-uniform stress effects in GaN based heterojunction field effect transistors. 73. 4 pp.–4 pp.. 3 indexed citations

18.

Braga, Nelson, R. Mickevičius, R. Gaška, et al.. (2004). Simulation of gate lag and current collapse in gallium nitride field-effect transistors. Applied Physics Letters. 85(20). 4780–4782. 44 indexed citations

19.

Braga, Nelson, R. Mickevičius, R. Gaška, et al.. (2004). Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors. Journal of Applied Physics. 95(11). 6409–6413. 71 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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