Sameer Joglekar

603 total citations
10 papers, 482 citations indexed

About

Sameer Joglekar is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Sameer Joglekar has authored 10 papers receiving a total of 482 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 9 papers in Electrical and Electronic Engineering and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Sameer Joglekar's work include GaN-based semiconductor devices and materials (9 papers), Semiconductor materials and devices (7 papers) and Ga2O3 and related materials (4 papers). Sameer Joglekar is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Semiconductor materials and devices (7 papers) and Ga2O3 and related materials (4 papers). Sameer Joglekar collaborates with scholars based in United States, France and Japan. Sameer Joglekar's co-authors include Tomás Palacios, Min Sun, Amirhasan Nourbakhsh, Ahmad Zubair, M. S. Dresselhaus, Yuhao Zhang, Tatsuya Fujishima, Tomás Palacios, Daniel Piedra and Nelson Braga and has published in prestigious journals such as Applied Physics Letters, Nanoscale and IEEE Transactions on Electron Devices.

In The Last Decade

Sameer Joglekar

10 papers receiving 466 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Sameer Joglekar United States 9 387 317 176 167 61 10 482
Shota Kaneki Japan 10 338 0.9× 355 1.1× 218 1.2× 128 0.8× 69 1.1× 15 450
Omair I. Saadat United States 10 423 1.1× 453 1.4× 230 1.3× 128 0.8× 76 1.2× 17 545
Jinyu Ni China 11 310 0.8× 395 1.2× 230 1.3× 131 0.8× 57 0.9× 32 458
Liang He China 12 207 0.5× 278 0.9× 209 1.2× 140 0.8× 44 0.7× 54 351
Yueh-Chin Lin Taiwan 12 324 0.8× 231 0.7× 118 0.7× 90 0.5× 102 1.7× 52 402
Yuuki Enatsu Japan 10 307 0.8× 436 1.4× 209 1.2× 108 0.6× 59 1.0× 14 461
Chang Min Jeon South Korea 11 257 0.7× 364 1.1× 193 1.1× 134 0.8× 131 2.1× 24 439
Marcello Cioni Italy 8 423 1.1× 473 1.5× 151 0.9× 90 0.5× 155 2.5× 27 553
Norikazu Nakamura Japan 12 280 0.7× 347 1.1× 167 0.9× 127 0.8× 72 1.2× 31 418
Ramya Yeluri United States 13 316 0.8× 306 1.0× 197 1.1× 105 0.6× 58 1.0× 17 406

Countries citing papers authored by Sameer Joglekar

Since Specialization
Citations

This map shows the geographic impact of Sameer Joglekar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sameer Joglekar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sameer Joglekar more than expected).

Fields of papers citing papers by Sameer Joglekar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sameer Joglekar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sameer Joglekar. The network helps show where Sameer Joglekar may publish in the future.

Co-authorship network of co-authors of Sameer Joglekar

This figure shows the co-authorship network connecting the top 25 collaborators of Sameer Joglekar. A scholar is included among the top collaborators of Sameer Joglekar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sameer Joglekar. Sameer Joglekar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

10 of 10 papers shown
1.
Nourbakhsh, Amirhasan, Ahmad Zubair, Sameer Joglekar, M. S. Dresselhaus, & Tomás Palacios. (2017). Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack. Nanoscale. 9(18). 6122–6127. 124 indexed citations
2.
Bagnall, Kevin R., Omair I. Saadat, Sameer Joglekar, Tomás Palacios, & Evelyn N. Wang. (2017). Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry. IEEE Transactions on Electron Devices. 64(5). 2121–2128. 47 indexed citations
3.
Joglekar, Sameer, Ujwal Radhakrishna, Daniel Piedra, D.A. Antoniadis, & Tomás Palacios. (2017). Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level V<inf>t</inf> engineering for transconductance compensation. 39 indexed citations
4.
Joglekar, Sameer, et al.. (2016). Finite Element Analysis of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors. IEEE Transactions on Semiconductor Manufacturing. 29(4). 349–354. 3 indexed citations
5.
6.
Wong, Hiu Yung, Min Sun, Sameer Joglekar, et al.. (2015). Design space and origin of off-state leakage in GaN vertical power diodes. The HKU Scholars Hub (University of Hong Kong). 35.1.1–35.1.4. 93 indexed citations
7.
Joglekar, Sameer, et al.. (2015). Impact of Al<sub>2</sub>O<sub>3</sub> Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 63(1). 318–325. 27 indexed citations
8.
Fujishima, Tatsuya, Sameer Joglekar, Daniel Piedra, et al.. (2013). Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment. Applied Physics Letters. 103(8). 31 indexed citations
9.
Zhang, Yuhao, Min Sun, Sameer Joglekar, Tatsuya Fujishima, & Tomás Palacios. (2013). Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors. Applied Physics Letters. 103(3). 88 indexed citations
10.
Zhang, Yuhao, Min Sun, Sameer Joglekar, & Tomás Palacios. (2013). High threshold voltage in GaN MOS-HEMTs modulated by fluorine plasma and gate oxide. The HKU Scholars Hub (University of Hong Kong). 46. 141–142. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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