T. Kikkawa

1.9k citations

80 papers · 1.6k indexed · h-index 22

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 62
- GaN-based semiconductor devices and materials 62
Electronic, Optical and Magnetic Materials 23
- Ga2O3 and related materials 19

Co-authors: Masahito Kanamura Kenji Imanishi K. Joshin Naoki Hara Toshihiro Ohki Kozo Makiyama Tadahiro Imada Naoya Okamoto
Journals: Japanese Journal of Applied Physics (5 papers)Journal of Crystal Growth (3 papers)physica status solidi (a) (3 papers)Journal of Applied Physics (2 papers)IEEE Electron Device Letters (1 paper)
Partner nations: Japan United States France

In The Last Decade

T. Kikkawa

80 papers receiving 1.4k citations

Peers

Countries citing papers authored by T. Kikkawa

Since Specialization

Citations

This map shows the geographic impact of T. Kikkawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Kikkawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Kikkawa more than expected).

Fields of papers citing papers by T. Kikkawa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Kikkawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Kikkawa. The network helps show where T. Kikkawa may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. Kikkawa, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Kikkawa Line = papers co-authored together T. Kikkawa links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Commercialization and reliability of 600 V GaN power switches T. Kikkawa, A. Atabey, Neil Barretto, Kenji Imanishi, М. Олексів, Yifeng Wu, Likun Shen, S. Otman, Лапин Василий Николаевич, Hoon Jung Jone, Peter Smith, Xiangyong MEN, L. McCarthy, Piercey-Normore, Rakesh Lal, Umesh K. Mishra, P. Parikh	2015	29
2	Correlation of on‐wafer 400 V dynamic behavior and trap characteristics of GaN‐HEMTs physica status solidi (a) ·Tadahiro Imada, Daniel Piedra, T. Kikkawa, Tomás Palacios	2014	5
3	Current Status and Future Prospects of GaN HEMTs for High Power and High Frequency Applications ECS Transactions ·T. Kikkawa, Masahito Kanamura, Toshihiro Ohki, Kenji Imanishi, Keiji Watanabe, K. Joshin	2013	15
4	Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Japanese Journal of Applied Physics ·Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Naoya Okamoto, T. Kikkawa	2013	20
5	Tensile strain‐induced formation of micro‐cracks for AlGaN/GaN heterostructures Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Junji Kotani, А. В. Горохов, T. Miyajima, Norikazu Nakamura, T. Kikkawa, Keiji Watanabe, Kenji Imanishi	2013	8
6	GaN single-chip transceiver frontend MMIC for X-band applications S. Masuda, Masao Yamada, Ariel Eizenberg, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, T. Kikkawa, H. Shigematsu	2012	46
7	Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs Materials science forum ·Naoya Okamoto, Kenji Imanishi, T. Kikkawa, Yongseong Choi	2010	4
8	Suppression of current collapse for millimeter‐wave GaN‐HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, K. Joshin, Kenji Imanishi, Naoki Hara, T. Kikkawa	2010	15
9	A Normally-Off GaN HEMT with Large Drain Current IEEJ Transactions on Electronics Information and Systems ·Masahito Kanamura, Toshihiro Ohki, T. Kikkawa, Kenji Imanishi, Naoki Hara	2010	1
10	High performance and high reliability AlGaN/GaN HEMTs physica status solidi (a) ·T. Kikkawa, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kenji Imanishi, Naoki Hara, K. Joshin	2009	90
11	Recent progress of GaN electronic devices for wireless communication system Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·T. Kikkawa, Kenji Imanishi, Naoki Hara, H. Shigematsu, K. Joshin	2008	7
12	High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications T. Kikkawa, Kozo Makiyama, Kenji Imanishi, Toshihiro Ohki, Masahito Kanamura, Naoya Okamoto, Naoki Hara, K. Joshin	2007	5
13	An over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT power amplifier for wireless base station applications Masahito Kanamura, T. Kikkawa, Taisuke Iwai, Kenji Imanishi, T. Kubo, K. Joshin	2006	25
14	A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications K. Joshin, T. Kikkawa, Hiroyuki Hayashi, R. H. M., Y. P. Filiakin, Masafumi Yokoyama, 予防実務研究会, M. Takikawa	2004	81
15	High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage T. Kikkawa, Miyuki Nagahara, 予防実務研究会, Y. P. Filiakin, S. Kato, Masafumi Yokoyama, Masahito Kanamura, Yasuhiro Yamaguchi, Naoki Hara, K. Joshin	2003	14
16	Barrier metal free copper damascene interconnection technology using atmospheric copper reflow and nitrogen doping in SiOF film Wei Dai, Hiroaki Ishikawa, Nasrin Pouratar, M. Suzuki, Koji Inoue, J. Hochreiter, Prakhya Sai Manoj, E. Booth, T. Kikkawa	2002	3
17	Low-dielectric constant materials 3. Materials Research Society symposium proceedings Volume 476 OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·Yuichiro Aoyama, Paul A. Kohl, T. Kikkawa, Cleidimar Barbosa dos Santos	1997	1
18	Fabrication of Hemt-on-Si by Movpe for Lsi Applications MRS Proceedings ·Faris Sahib Alrammahi, T. Kikkawa, 博阳刘, L. Bogner, Toyin Ajao	1991	2
19	Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine Journal of Applied Physics ·Silvie Bártová, T. Kikkawa, Hiroki Tanaka, M. Takikawa, J. Komeno	1990	3
20	MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with Tertiarybutylarsine Japanese Journal of Applied Physics ·Hitoshi Tanaka, T. Kikkawa, Shuo LYU, J. Komeno	1989	14

About T. Kikkawa

T. Kikkawa is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 80 papers that have together received 1.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (62 papers), Radio Frequency Integrated Circuit Design (31 papers), Semiconductor materials and devices (26 papers), Silicon Carbide Semiconductor Technologies (20 papers), Ga2O3 and related materials (19 papers), Semiconductor Quantum Structures and Devices (16 papers), Advanced Power Amplifier Design (11 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (498 citations), Electrical and Electronic Engineering (1.3k citations), Atomic and Molecular Physics, and Optics (334 citations) and Materials Chemistry (258 citations). T. Kikkawa has collaborated with scholars based in Japan, United States and France. Frequent co-authors include Masahito Kanamura, Kenji Imanishi, K. Joshin, Naoki Hara, Toshihiro Ohki, Kozo Makiyama, Tadahiro Imada, Naoya Okamoto, Atsushi Yamada and J. Komeno. Their work appears in journals such as Japanese Journal of Applied Physics, Journal of Crystal Growth, physica status solidi (a), Journal of Applied Physics and IEEE Electron Device Letters.

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