Sami Suihkonen

2.2k citations

103 papers · 1.8k indexed · h-index 24

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 86
- GaN-based semiconductor devices and materials 86
Electronic, Optical and Magnetic Materials 28
- Ga2O3 and related materials 28

Co-authors: M. Sopanen Harri Lipsanen Jori Lemettinen O. Svensk Tomás Palacios Filip Tuomisto Siddha Pimputkar Sakari Sintonen
Journals: Journal of Crystal Growth (22 papers)Applied Physics Letters (10 papers)Journal of Applied Physics (5 papers)Japanese Journal of Applied Physics (5 papers)IEEE Transactions on Electron Devices (4 papers)
Partner nations: Finland Russia United States

In The Last Decade

Sami Suihkonen

100 papers receiving 1.7k citations

Peers

Countries citing papers authored by Sami Suihkonen

Since Specialization

Citations

This map shows the geographic impact of Sami Suihkonen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sami Suihkonen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sami Suihkonen more than expected).

Fields of papers citing papers by Sami Suihkonen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sami Suihkonen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sami Suihkonen. The network helps show where Sami Suihkonen may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Sami Suihkonen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Sami Suihkonen Line = papers co-authored together Sami Suihkonen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication Advanced Electronic Materials ·Sebastian Keibek, Glenn Ross, Sami Suihkonen, Mervi Paulasto‐Kröckel	2024	2
2	Ultrasensitive Monolithic Dopamine Microsensors Employing Vertically Aligned Carbon Nanofibers Advanced Healthcare Materials ·Lingju Meng, Maedeh Akhoundian, Leila Abdullina, Yalda Shoja, Testuro Negishi, Kristoffer Meinander, Sami Suihkonen, Sami Franssila	2024	1
3	Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111) IEEE Transactions on Electron Devices ·Johanna Mankowitz, Young Bin Kim, Sami Suihkonen, Jori Lemettinen, Apurba Laha, Subhabrata Dhar, Suddhasatta Mahapatra	2023	6
4	Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·马霞霞, Carla Stayboldt, Christoffer Kauppinen, Sami Suihkonen, Kenichiro Mizohata, Harri Lipsanen	2023	2
5	High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111) А М Топчиев, Gün Alppay, Roger Raul Rafael, Sami Suihkonen, Jori Lemettinen, Apurba Laha, Dinesh Kabra, Suddhasatta Mahapatra	2022	0
6	Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I _ON/I _OFF Operating at 473 K IEEE Transactions on Electron Devices ·ROBERTA COSTA CAMINHA, Yadlapalli S Kusuma, Toluwalase A. Olutoogun, G. R. HlBBARD, 未來森山, N. Y. T. Kung, Jori Lemettinen, Sami Suihkonen, Monika Gorin, H. J. Osten, Swaroop Ganguly, Dipankar Saha, Apurba Laha	2021	11
7	A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer IEEE Transactions on Electron Devices ·G. R. HlBBARD, ROBERTA COSTA CAMINHA, Shivam Singh, Swarup Deb, Sami Suihkonen, Jori Lemettinen, Subhabrata Dhar, Dinesh Kabra, Apurba Laha	2021	21
8	Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al_0.8Ga_0.2N/AlN on SiC With Drain Current Over 100 mA/mm IEEE Electron Device Letters ·Jori Lemettinen, Nadim Chowdhury, Hironori Okumura, Jasmine Pomaika'ikaikamahine Merseberg, Sami Suihkonen, Tomás Palacios	2019	37
9	p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si IEEE Electron Device Letters ·Nadim Chowdhury, Jori Lemettinen, Qingyun Xie, Yuhao Zhang, Nitul S. Rajput, Xiang Peng, Kai Cheng, Sami Suihkonen, Han Wui Then, Tomás Palacios	2019	114
10	Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application Applied Physics Letters ·ROBERTA COSTA CAMINHA, Toluwalase A. Olutoogun, 未來森山, Foyez Jalal Uddin, K. Das Gupta, Dipankar Saha, Swaroop Ganguly, Apurba Laha, Jori Lemettinen, Christoffer Kauppinen, Jasmine Pomaika'ikaikamahine Merseberg, Sami Suihkonen, Monika Gorin, H. J. Osten	2019	14
11	N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications Applied Physics Express ·Jori Lemettinen, Hironori Okumura, Tomás Palacios, Sami Suihkonen	2018	18
12	Elimination of Lateral Resistance and Current Crowding in Large‐Area LEDs by Composition Grading and Diffusion‐Driven Charge Transport Advanced Electronic Materials ·Pyry Kivisaari, Jasmine Pomaika'ikaikamahine Merseberg, Sami Suihkonen, Jani Oksanen	2017	14
13	A technique for large-area position-controlled growth of GaAs nanowire arrays Nanotechnology ·Christoffer Kauppinen, Tuomas Haggrén, Xueying Yan, Hua Jiang, Teppo Huhtio, Esko I. Kauppinen, Veer Dhaka, Sami Suihkonen, M. Kaivola, Harri Lipsanen, M. Sopanen	2016	10
14	A new system for sodium flux growth of bulk GaN. Part I: System development Journal of Crystal Growth ·Stephanie Southworth, Siddha Pimputkar, Boris Freidlin, Hamad Albrithen, Sami Suihkonen, Shuji Nakamura, James S. Speck	2016	19
15	Stability of materials in supercritical ammonia solutions The Journal of Supercritical Fluids ·Siddha Pimputkar, Thomas F. Malkowski, ايمان عائشة فندوقومة, Ael Barlow, Sami Suihkonen, James S. Speck, Shuji Nakamura	2015	17
16	Diffusion injected multi-quantum well light-emitting diode structure Applied Physics Letters ·Pin-Jen Chao, Pyry Kivisaari, 王彦姿, O. Svensk, Sami Suihkonen, J. Oksanen, Jukka Tulkki, M. Sopanen	2014	19
17	Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation Separation and Purification Technology ·Eveliina Repo, Rengaraj Selvaraj, Marc Lynch, M. García Hernández, Sami Suihkonen, M. Sopanen, Mika Sillanpää	2013	72
18	Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers Physics of the Solid State ·Guo Tang Shuqiang Li, L. E. Vorob’ev, 申少君, 王彦姿, 扬吕, Sami Suihkonen, Citra Sopiatul Qolbi, V. A. Shalygin	2013	6
19	MOCVD growth and characterization of near‐surface InGaN/GaN single quantum wells for non‐radiative coupling of optical excitations Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·O. Svensk, Sami Suihkonen, Sakari Sintonen, Anwen Sun, F. Tojal del Casero, Harri Lipsanen, M. Sopanen, Beata Kardynał	2012	3
20	Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Anwen Sun, F. Tojal del Casero, O. Svensk, Sami Suihkonen, Sakari Sintonen, M. Sopanen, Beata Kardynał	2011	2

About Sami Suihkonen

Sami Suihkonen is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Electrical and Electronic Engineering and Mechanics of Materials, having authored 103 papers that have together received 1.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (86 papers), Semiconductor materials and devices (33 papers), Ga2O3 and related materials (28 papers), ZnO doping and properties (26 papers), Semiconductor Quantum Structures and Devices (23 papers), Metal and Thin Film Mechanics (20 papers), Acoustic Wave Resonator Technologies (8 papers) and Silicon Carbide Semiconductor Technologies (6 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electronic, Optical and Magnetic Materials (572 citations), Electrical and Electronic Engineering (854 citations), Materials Chemistry (660 citations) and Atomic and Molecular Physics, and Optics (390 citations). Sami Suihkonen has collaborated with scholars based in Finland, Russia and United States. Frequent co-authors include M. Sopanen, Harri Lipsanen, Jori Lemettinen, O. Svensk, Tomás Palacios, Filip Tuomisto, Siddha Pimputkar, Sakari Sintonen, M. A. Odnoblyudov and Hironori Okumura. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, Journal of Applied Physics, Japanese Journal of Applied Physics and IEEE Transactions on Electron Devices.

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