J. Moers

630 total citations
40 papers, 493 citations indexed

About

J. Moers is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J. Moers has authored 40 papers receiving a total of 493 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 11 papers in Biomedical Engineering. Recurrent topics in J. Moers's work include Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (19 papers) and Semiconductor Quantum Structures and Devices (12 papers). J. Moers is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (19 papers) and Semiconductor Quantum Structures and Devices (12 papers). J. Moers collaborates with scholars based in Germany, Netherlands and Austria. J. Moers's co-authors include H. Lüth, Detlev Grützmacher, Andreas Offenhäusser, Sven Ingebrandt, P. Kordoš, Mihail Ion Lepsa, Thomas Schäpers, L. Vescan, T. Grabolla and Regina Stockmann and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Biosensors and Bioelectronics.

In The Last Decade

J. Moers

37 papers receiving 477 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Moers Germany	13	357	220	163	108	46	40	493
D. Simeone Italy	13	300 0.8×	182 0.8×	64 0.4×	149 1.4×	23 0.5×	31	481
N. Nagel Germany	14	415 1.2×	142 0.6×	166 1.0×	345 3.2×	7 0.2×	45	649
Johannes Edlinger Liechtenstein	13	299 0.8×	92 0.4×	299 1.8×	86 0.8×	47 1.0×	25	512
Rebecca A. Braff United States	6	435 1.2×	410 1.9×	117 0.7×	47 0.4×	10 0.2×	8	628
Deborah M. Paskiewicz United States	11	439 1.2×	353 1.6×	181 1.1×	291 2.7×	4 0.1×	22	684
Joseph D. Christesen United States	16	530 1.5×	537 2.4×	289 1.8×	284 2.6×	6 0.1×	21	843
Robert Juhasz Sweden	14	486 1.4×	601 2.7×	192 1.2×	510 4.7×	81 1.8×	16	848
B. O'Neill Ireland	10	2.1k 5.8×	889 4.0×	156 1.0×	131 1.2×	37 0.8×	16	2.2k
Toshikatsu Sakai Japan	14	343 1.0×	78 0.4×	79 0.5×	319 3.0×	119 2.6×	39	513
Carlos Monton United States	11	98 0.3×	87 0.4×	118 0.7×	101 0.9×	8 0.2×	32	334

Countries citing papers authored by J. Moers

Since Specialization

Citations

This map shows the geographic impact of J. Moers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Moers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Moers more than expected).

Fields of papers citing papers by J. Moers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Moers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Moers. The network helps show where J. Moers may publish in the future.

Co-authorship network of co-authors of J. Moers

This figure shows the co-authorship network connecting the top 25 collaborators of J. Moers. A scholar is included among the top collaborators of J. Moers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Moers. J. Moers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Mikulics, M., P. Kordoš, D. Gregušová, et al.. (2021). Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement. Applied Physics Letters. 118(4). 26 indexed citations

Moers, J., et al.. (2012). Optimized marker definition for high overlay accuracy e-beam lithography. Microelectronic Engineering. 97. 68–71. 5 indexed citations

Nanver, Lis K., Vladimir Jovanović, J. Moers, et al.. (2011). Integration of MOSFETs with SiGe dots as stressor material. Solid-State Electronics. 60(1). 75–83. 14 indexed citations

Stepina, N. P., et al.. (2011). Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system. Applied Physics Letters. 98(14). 8 indexed citations

Jovanović, Vladimir, Lis K. Nanver, J. Moers, et al.. (2010). MOSFETs on self-assembled SiGe dots with strain-enhanced mobility. 926–928.

Moers, J., et al.. (2010). Single photon detection by means of SiGe-quantum dot arrays. 91. 9–12. 1 indexed citations

Lepsa, Mihail Ion, et al.. (2009). Gate-controlled quantum collimation in nanocolumn resonant tunneling transistors. Nanotechnology. 20(46). 465402–465402. 2 indexed citations

Moers, J.. (2007). Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface. Applied Physics A. 87(3). 531–537. 24 indexed citations

Stockmann, Regina, et al.. (2007). Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications. Sensors and Actuators B Chemical. 128(1). 208–217. 21 indexed citations

10.

Wrobel, Günter, et al.. (2006). Single cell recordings with pairs of complementary transistors. Applied Physics Letters. 89(1). 16 indexed citations

11.

Moers, J., et al.. (2005). Vertical double-gate MOSFETs. 215–218. 3 indexed citations

12.

Goryll, Michael, J. Moers, Sven Ingebrandt, et al.. (2005). N-Channel field-effect transistors with floating gates for extracellular recordings. Biosensors and Bioelectronics. 21(7). 1037–1044. 39 indexed citations

13.

Álvarez, David, et al.. (2004). Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(1). 76–79. 10 indexed citations

14.

Moers, J., Michael Goryll, M. Marso, et al.. (2002). Top contacts for vertical double-gate MOSFETs. Microelectronic Engineering. 64(1-4). 465–471. 8 indexed citations

15.

Kluth, P., et al.. (2002). Diffusion and defect formation in ion implanted Si nanostructures. ANU Open Research (Australian National University). 71. 682–685. 1 indexed citations

16.

Moers, J., L. Vescan, M. Marso, et al.. (1998). Selectively grown vertical Si MOS transistor with reduced overlap capacitances. Thin Solid Films. 336(1-2). 306–308. 14 indexed citations

17.

Zastrow, U., Roger Loo, K. Szot, et al.. (1997). SIMS depth profiling of vertical p-channel Si-MOS transistor structures. Fresenius Journal of Analytical Chemistry. 358(1-2). 203–207. 5 indexed citations

18.

Förster, A., et al.. (1997). Band offsets at heavily strained III - V interfaces. Journal of Physics D Applied Physics. 30(10). 1436–1441. 9 indexed citations

19.

Vescan, L., et al.. (1996). Selectively Grown Short Channel Vertical SI-P MOS Transistor for Future Three Dimensional Self-Aligned Integration. European Solid-State Device Research Conference. 943–946. 1 indexed citations

20.

Vescan, L., Roger Loo, J. Moers, et al.. (1996). Selectively grown vertical Si- p MOS transistorwith short channel lengths. Electronics Letters. 32(4). 406–407. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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