Chuanxin Lian

1.5k citations

18 papers · 1.3k indexed · 1 hit paper · h-index 9

Condensed Matter Physics top 1%
Electronic, Optical and Magnetic Materials top 5%
Materials Chemistry top 10%
Electrical and Electronic Engineering top 10%
Atomic and Molecular Physics, and Optics top 10%

Co-authors: Huili Grace Xing Debdeep Jena Vladimir Protasenko John Simon Kristof Tahy Patrick Fay Guowang Li Libai Huang
Topics: GaN-based semiconductor devices and materials (13 papers)Semiconductor Quantum Structures and Devices (8 papers)Semiconductor materials and devices (7 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Science Nano Letters Applied Physics Letters
Partner nations: United States Philippines

In The Last Decade

Chuanxin Lian

17 papers receiving 1.2k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

2009 669 citations John Simon, Vladimir Protasenko et al. Science profile →

Peers

Countries citing papers authored by Chuanxin Lian

Since Specialization

Citations

This map shows the geographic impact of Chuanxin Lian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chuanxin Lian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chuanxin Lian more than expected).

Fields of papers citing papers by Chuanxin Lian

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chuanxin Lian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chuanxin Lian. The network helps show where Chuanxin Lian may publish in the future.

Co-authorship network of co-authors of Chuanxin Lian

This figure shows the co-authorship network connecting the top 25 collaborators of Chuanxin Lian. A scholar is included among the top collaborators of Chuanxin Lian based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chuanxin Lian. Chuanxin Lian is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

#	Work	Indexed citations
1	Finite Element Analysis of Fabrication- and Operation-Induced Mechanical Stress in AlGaN/GaN Transistors 2016 ·IEEE Transactions on Semiconductor Manufacturing ·Sameer Joglekar,Chuanxin Lian,(unknown),Yan Zhang,Tomás Palacios,A.W. Hanson	3
2	Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy 2011 ·physica status solidi (a) ·Jia Guo,Yu Cao,Chuanxin Lian,Tom Zimmermann,Guowang Li,Jai Verma,Xiang Gao,Shiping Guo,P. Saunier,Mark A. Wistey,Debdeep Jena,(unknown)	28
3	Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design 2011 ·physica status solidi (a) ·Debdeep Jena,John Simon,(unknown),Yu Cao,Kevin Goodman,Jai Verma,Satyaki Ganguly,Guowang Li,(unknown),Vladimir Protasenko,Chuanxin Lian,Thomas Kosel,Patrick Fay,(unknown)	74
4	仕事関数工学によるAl0.72Ga0.28N/AlN/GaN HEMTにおける閾値電圧制御 2010 ·IEEE Electron Device Letters ·Guowang Li,(unknown),Yu Cao,Chuanxin Lian,(unknown),Ronghua Wang,(unknown),(unknown),Debdeep Jena	1
5	Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering 2010 ·IEEE Electron Device Letters ·Guowang Li,Tom Zimmermann,Yu Cao,Chuanxin Lian,(unknown),Ronghua Wang,Patrick Fay,Huili Grace Xing,Debdeep Jena	52
6	Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene 2010 ·Nano Letters ·Libai Huang,Gregory V. Hartland,Li‐Qiang Chu,Luxmi,R. M. Feenstra,Chuanxin Lian,Kristof Tahy,Huili Grace Xing	156
7	Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance 2010 ·IEEE Electron Device Letters ·Ronghua Wang,P. Saunier,(unknown),Chuanxin Lian,Xiang Gao,Shiping Guo,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Grace Xing	141
8	Quantum transport in graphene nanoribbons patterned by metal masks 2010 ·Applied Physics Letters ·Chuanxin Lian,Kristof Tahy,Fang Tian,Guowang Li,Huili Grace Xing,Debdeep Jena	39
9	High performance E-mode InAlN/GaN HEMTs: Interface states from subthreshold slopes 2010 ·Ronghua Wang,(unknown),Tian Fang,Tom Zimmermann,Chuanxin Lian,Guowang Li,P. Saunier,Xiang Gao,Shiping Guo,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Grace Xing	3
10	Molecular Beam Epitaxy Regrowth of Ohmics in Metal-face AlN/GaN Transistors 2010 ·Chuanxin Lian,Yu Cao,Ronghua Wang,Guowang Li,Tom Zimmermann,Debdeep Jena,Huili Grace Xing	2
11	Work-function engineering in novel high Al composition Al<inf>0.72</inf>Ga<inf>0.28</inf>N/AlN/GaN HEMTs 2010 ·Guowang Li,Tom Zimmermann,Yu Cao,Chuanxin Lian,(unknown),Ronghua Wang,Patrick Fay,Huili Grace Xing,Debdeep Jena	0
12	Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructuresbreakdown → 2009 ·Science ·John Simon,Vladimir Protasenko,Chuanxin Lian,Huili Grace Xing,Debdeep Jena	669
13	Quantum transport in patterned graphene nanoribbons 2009 ·Chuanxin Lian,Kristof Tahy,Fang Tian,Guowang Li,Huili Grace Xing,Debdeep Jena	3
14	Electrical transport properties of wafer-fused p-GaAs/n-GaN heterojunctions 2008 ·Applied Physics Letters ·Chuanxin Lian,Huili Grace Xing,You-Chia Chang,(unknown)	27
15	The role of setback layers on the breakdown characteristics of AlGaAs/GaAs/GaN HBTs 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Chuanxin Lian,Huili Grace Xing	1
16	Gain degradation mechanisms in wafer fused AlGaAs∕GaAs∕GaN heterojunction bipolar transistors 2007 ·Applied Physics Letters ·Chuanxin Lian,Huili Grace Xing,(unknown),David F. Brown,L. McCarthy	6
17	Conduction band offset at the InN∕GaN heterojunction 2007 ·Applied Physics Letters ·Kejia Wang,Chuanxin Lian,Ning Su,Debdeep Jena,John Timler	44
18	Surface potential measurements on Ni–(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy 2006 ·Applied Physics Letters ·Chuanxin Lian,Huili Grace Xing	8

About Chuanxin Lian

Chuanxin Lian is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 18 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (13 papers), Semiconductor Quantum Structures and Devices (8 papers) and Semiconductor materials and devices (7 papers). The work is most often cited by research in Condensed Matter Physics (927 citations), Electronic, Optical and Magnetic Materials (587 citations) and Atomic and Molecular Physics, and Optics (369 citations). Chuanxin Lian has collaborated with scholars based in United States and Philippines. Frequent co-authors include Huili Grace Xing, Debdeep Jena, Vladimir Protasenko, John Simon, Kristof Tahy, Patrick Fay, Guowang Li, Libai Huang, Gregory V. Hartland and Ronghua Wang. Their work appears in journals such as Science, Nano Letters and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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