Н. С. Болтовец

415 citations

59 papers · 304 indexed · h-index 9

Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 10
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 35
- Semiconductor Quantum Structures and Devices 14
Electrical and Electronic Engineering
- Silicon Carbide Semiconductor Technologies 9
- Semiconductor materials and devices 8
Materials Chemistry
Electronic, Optical and Magnetic Materials
Mechanics of Materials
- Metal and Thin Film Mechanics 8
Mechanical Engineering
- Intermetallics and Advanced Alloy Properties 7
Astronomy and Astrophysics
- Superconducting and THz Device Technology 6

Co-authors: Р. В. Конакова A. E. Belyaev В. В. Миленин V. F. Mitin E. F. Venger А. В. Саченко V.P. Kladko Franco Pavese
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering
Journals: Journal of Applied Physics (2 papers)Applied Surface Science (1 paper)Review of Scientific Instruments (1 paper)
Partner nations: Ukraine Russia Moldova

In The Last Decade

Н. С. Болтовец

51 papers receiving 263 citations

Peers

Countries citing papers authored by Н. С. Болтовец

Since Specialization

Citations

This map shows the geographic impact of Н. С. Болтовец's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Н. С. Болтовец with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Н. С. Болтовец more than expected).

Fields of papers citing papers by Н. С. Болтовец

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Н. С. Болтовец. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Н. С. Болтовец. The network helps show where Н. С. Болтовец may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Н. С. Болтовец, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Н. С. Болтовец Line = papers co-authored together Н. С. Болтовец links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Nanocrystalline SiC film thermistors for cryogenic applications Review of Scientific Instruments ·V. F. Mitin,V. V. Kholevchuk,А. А. Семенов,A. A. Kozlovskiĭ,Н. С. Болтовец,Valentyn A. Krivutsa,A. S. Slepova,С. В. Новицкий	2018	2
2	Temperature dependences of the contact resistivity in ohmic contacts to n +-InN Semiconductors ·А. В. Саченко,A. E. Belyaev,Н. С. Болтовец,P. N. Brunkov,V. N. Jmerik,S. V. Ivanov,Л. М. Капитанчук,Р. В. Конакова,V.P. Kladko,P. N. Romanets,P. O. Saja,N. V. Safryuk,В. Н. Шеремет	2015	3
3	Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K Semiconductors ·А. В. Саченко,A. E. Belyaev,Н. С. Болтовец,Р. В. Конакова,Л. М. Капитанчук,В. Н. Шеремет,Yu. N. Sveshnikov,Artem S. Pilipchuk	2014	2
4	Integrated microwave (centimeter-range) modulator on polycrystalline diamond layers Technical Physics ·Volodymyr V. Basanets,Н. С. Болтовец,А. В. Гуцул,А. В. Зоренко,Victor Ralchenko,A. E. Belyaev,V.P. Kladko,Р. В. Конакова,Ya. Ya. Kudrik,(unknown),В. В. Миленин	2013	1
5	Mechanism of contact resistance formation in ohmic contacts with high dislocation density Journal of Applied Physics ·А. В. Саченко,A. E. Belyaev,Н. С. Болтовец,Р. В. Конакова,Ya. Ya. Kudryk,С. В. Новицкий,В. Н. Шеремет,J. Li,S. А. Vitusevich	2012	21
6	Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density Semiconductors ·А. В. Саченко,A. E. Belyaev,A. V. Bobyl,Н. С. Болтовец,V. N. Ivanov,Л. М. Капитанчук,Р. В. Конакова,Ya. Ya. Kudryk,В. В. Миленин,С. В. Новицкий,D. A. Sakseev,I. S. Tarasov,В. Н. Шеремет,M. A. Yagovkina	2012	8
7	Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes Semiconductors ·A. E. Belyaev,Volodymyr V. Basanets,Н. С. Болтовец,А. В. Зоренко,Л. М. Капитанчук,V.P. Kladko,Р. В. Конакова,Наталья Владимировна Колесник,T. V. Korostinskaya,T. V. Kritskaya,Ya. Ya. Kudryk,(unknown),В. В. Миленин,A. B. Ataubaeva	2011	8
8	Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti-n-GaN Semiconductors ·A. E. Belyaev,Н. С. Болтовец,В. Н. Иванов,Л. М. Капитанчук,Р. В. Конакова,Ya. Ya. Kudryk,O. S. Lytvyn,В. В. Миленин,В. Н. Шеремет,Yu. N. Sveshnikov	2009	2
9	Dual function sensors for concurrent measurement of temperature and magnetic field in cryogenic applications Cryogenics ·V. F. Mitin,Н. С. Болтовец,V. V. Kholevchuk,Volodymyr V. Basanets,E. V. Mitin,Paul C. McDonald,Franco Pavese	2008	6
10	Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride Semiconductors ·A. E. Belyaev,Н. С. Болтовец,V. N. Ivanov,V.P. Kladko,Р. В. Конакова,Ya. Ya. Kudrik,(unknown),В. В. Миленин,Yu. N. Sveshnikov,В. Н. Шеремет	2008	29
11	Ohmic contacts to Hall sensors based on n-InSb–GaAs(i) heterostructure Semiconductor Physics Quantum Electronics & Optoelectronics ·Н. С. Болтовец	2006	2
12	A silicon carbide thermistor Semiconductor Physics Quantum Electronics & Optoelectronics ·Н. С. Болтовец	2006	3
13	Structure and properties of thin ceramic coatings in the system AlN-TiCrB2 Powder Metallurgy and Metal Ceramics ·A. D. Panasyuk,I. A. Podchernyaeva,Н. С. Болтовец,О. В. Руденко,В. Н. Иванов,M. A. Teplenko	2006	5
14	New technological possibilities for formation of GaAs and InP epitaxial layers for Gunn diodes I. N. Arsentiev,A. E. Belyaev,A. V. Bobyl,Н. С. Болтовец,V. N. Ivanov,Р. В. Конакова,S. G. Konnikov,Ya. Ya. Kudryk,В. В. Миленин,I.S. Taraso,E.P. Markovsky,E. Rusu	2005	0
15	SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers Semiconductor Physics Quantum Electronics & Optoelectronics ·Н. С. Болтовец,(unknown),(unknown)	2004	3
16	Technology and experimental studies of contacts for microwave diodes based on interstitial phases Semiconductor Physics Quantum Electronics & Optoelectronics ·Н. С. Болтовец	2001	3
17	Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications Sensors and Actuators A Physical ·Н. С. Болтовец,V. V. Kholevchuk,Р. В. Конакова,V. F. Mitin,E. F. Venger	2001	28
18	Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals Semiconductor Physics Quantum Electronics & Optoelectronics ·Н. С. Болтовец	2000	5
19	Contacts for silicon IMPATT and pick-off diodes Semiconductor Physics Quantum Electronics & Optoelectronics ·Н. С. Болтовец	2000	2
20	Low-temperature Ge film resistance thermometers Sensors and Actuators A Physical ·V. F. Mitin,E. F. Venger,Н. С. Болтовец,M. Oszwałdowski,T. Berns	1998	10

About Н. С. Болтовец

Н. С. Болтовец is a scholar working on Nuclear Energy and Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 59 papers that have together received 304 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (35 papers), Semiconductor Quantum Structures and Devices (14 papers), GaN-based semiconductor devices and materials (10 papers), Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor materials and devices (8 papers), Metal and Thin Film Mechanics (8 papers), Intermetallics and Advanced Alloy Properties (7 papers) and Superconducting and THz Device Technology (6 papers). The work is most often cited by research in Condensed Matter Physics (71 citations), Atomic and Molecular Physics, and Optics (181 citations) and Electrical and Electronic Engineering (193 citations). Н. С. Болтовец has collaborated with scholars based in Ukraine, Russia and Moldova. Frequent co-authors include Р. В. Конакова, A. E. Belyaev, В. В. Миленин, V. F. Mitin, E. F. Venger, А. В. Саченко, V.P. Kladko, Franco Pavese, Paul C. McDonald and V. K. Dugaev. Their work appears in journals such as Journal of Applied Physics, Applied Surface Science and Review of Scientific Instruments.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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