Mitsuhiro Shigeta

581 total citations
28 papers, 460 citations indexed

About

Mitsuhiro Shigeta is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Nuclear and High Energy Physics. According to data from OpenAlex, Mitsuhiro Shigeta has authored 28 papers receiving a total of 460 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 5 papers in Nuclear and High Energy Physics. Recurrent topics in Mitsuhiro Shigeta's work include Semiconductor materials and devices (14 papers), Silicon Carbide Semiconductor Technologies (10 papers) and Semiconductor Quantum Structures and Devices (7 papers). Mitsuhiro Shigeta is often cited by papers focused on Semiconductor materials and devices (14 papers), Silicon Carbide Semiconductor Technologies (10 papers) and Semiconductor Quantum Structures and Devices (7 papers). Mitsuhiro Shigeta collaborates with scholars based in Japan, United States and United Kingdom. Mitsuhiro Shigeta's co-authors include Katsuki Furukawa, Akira Suzuki, S. Nakajima, Shigeo Nakajima, Yoshimichi Okano, Satοru Nakashima, Hisashi Katahama, Akiyoshi Mitsuishi, Hiroo Yugami and Ichiro Fujimoto and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Mitsuhiro Shigeta

26 papers receiving 407 citations

Peers

Countries citing papers authored by Mitsuhiro Shigeta

Since Specialization

Citations

This map shows the geographic impact of Mitsuhiro Shigeta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mitsuhiro Shigeta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mitsuhiro Shigeta more than expected).

Fields of papers citing papers by Mitsuhiro Shigeta

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mitsuhiro Shigeta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mitsuhiro Shigeta. The network helps show where Mitsuhiro Shigeta may publish in the future.

Co-authorship network of co-authors of Mitsuhiro Shigeta

This figure shows the co-authorship network connecting the top 25 collaborators of Mitsuhiro Shigeta. A scholar is included among the top collaborators of Mitsuhiro Shigeta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mitsuhiro Shigeta. Mitsuhiro Shigeta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Front lighting for an energy-harvesting luminous-reflective display and its design considerations 2022 ·Optical Engineering ·(unknown), Mitsuhiro Shigeta, Ichiro Fujieda	0
2	28‐4: Fabrication and Operation of an Energy‐Harvesting Color Projector 2019 ·SID Symposium Digest of Technical Papers ·Ichiro Fujieda, (unknown), (unknown), Mitsuhiro Shigeta, (unknown)	1
3	A Stock Investment Expert System Based on A Fuzzy Neural Network 1998 ·Proceedings of the ISCIE International Symposium on Stochastic Systems Theory and its Applications ·Tadashi Dohi, Mitsuhiro Shigeta, S. Osaki	1
4	MBE growth of GaAs/AlAs QW structures on GaAs channeled substrates with submicron facets 1992 ·Surface Science ·S. Shimomura, S. Ohkubo, Yoshihiko Yuba, S. Namba, S. Hiyamizu, Mitsuhiro Shigeta, T. Yamamoto, (unknown)	7
5	Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral triangles 1992 ·Surface Science ·(unknown), T. Yamamoto, Mitsuhiro Shigeta, T. Takebe, (unknown), S. Hiyamizu, Ichiro Fujimoto	25
6	Pseudomorphic InGaAs/AlAs quantum wells grown on GaAs channeled substrates by MBE 1992 ·Surface Science ·(unknown), (unknown), S. Shimomura, Yoshihiko Yuba, S. Namba, Yasunori Okamoto, Mitsuhiro Shigeta, T. Yamamoto, (unknown), Naokatsu Sano, S. Hiyamizu	4
7	MBE growth of GaAs/AlAs double-barrier structures on GaAs channeled substrates 1991 ·Journal of Crystal Growth ·S. Shimomura, (unknown), (unknown), (unknown), Yoshihiko Yuba, S. Namba, S. Hiyamizu, Mitsuhiro Shigeta, T. Yamamoto, (unknown)	5
8	Effects of Substrate Misorientation and the Growth Mechanism of Si Doped GaAs Grown on (111)A Substrate by MBE 1989 ·MRS Proceedings ·Yoshimichi Okano, (unknown), Mitsuhiro Shigeta, (unknown), Ichiro Fujimoto, T. Suzuki	3
9	Inclined-epitaxy of β-SiC on Si(n11) substrates (n = 3, 4, 5, 6) by chemical vapor deposition 1988 ·Journal of Crystal Growth ·Mitsuhiro Shigeta, Y. Fujii, (unknown), Katsuki Furukawa, Akira Suzuki, S. Nakajima	7
10	Flute Mode Instability Driven by an E×B Drift Shear of a Nonuniform Radial Electric Field 1988 ·Journal of the Physical Society of Japan ·Hitoshi Hojo, Mitsuhiro Shigeta, Tsuguhiro Watanabe	6
11	Dependence on the Schottky metal and crystal orientation of the Schottky diode characteristics of β-SiC single crystals grown by chemical vapor deposition 1988 ·Journal of Applied Physics ·(unknown), Mitsuhiro Shigeta, Katsuki Furukawa, Akira Suzuki, Shigeo Nakajima	12
12	Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 5 0, 1533 (1987)] 1987 ·Applied Physics Letters ·Akira Suzuki, (unknown), Mitsuhiro Shigeta, Katsuki Furukawa, Shigeo Nakajima	9
13	Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering 1987 ·Journal of Applied Physics ·Hiroo Yugami, Satοru Nakashima, Akiyoshi Mitsuishi, (unknown), Mitsuhiro Shigeta, Katsuki Furukawa, Akira Suzuki, S. Nakajima	122
14	Insulated-gate and junction-gate FET's of CVD-Grown β-SiC 1987 ·IEEE Electron Device Letters ·Katsuki Furukawa, (unknown), (unknown), Y. Fujii, K. Nakanishi, Mitsuhiro Shigeta, Akira Suzuki, S. Nakajima	18
15	Inclined epitaxy of (411) beta silicon carbide on (511) silicon by chemical vapor deposition 1987 ·Applied Physics Letters ·Mitsuhiro Shigeta, (unknown), (unknown), Katsuki Furukawa, (unknown), (unknown), Akira Suzuki, Shigeo Nakajima	6
16	Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition 1986 ·Applied Physics Letters ·Akira Suzuki, (unknown), Mitsuhiro Shigeta, Katsuki Furukawa, Shigeo Nakajima	55
17	3C-SiC p-n junction diodes 1986 ·Applied Physics Letters ·Katsuki Furukawa, (unknown), Mitsuhiro Shigeta, Akira Suzuki, S. Nakajima	40
18	Streaming Tearing Mode 1985 ·Journal of the Physical Society of Japan ·Mitsuhiro Shigeta, Tetsuya Sato, B. Dasgupta	1
19	Nonlinear Stability of Drift Wave in a Sheared Magnetic Field 1983 ·Journal of the Physical Society of Japan ·Mitsuhiro Shigeta, (unknown), Kyoji Nishikawa	1
20	Electron Diffusion in Sheared Magnetic Field Due to Electrostatic High n Ballooning Mode 1983 ·Journal of the Physical Society of Japan ·Mitsuhiro Shigeta	0

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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