A. M. Huber

1.0k citations

34 papers · 834 indexed · h-index 12

Impact in

Nuclear Energy and Engineering top 10%
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Nuclear Energy and Engineering 1
Surfaces, Coatings and Films 10
- Electron and X-Ray Spectroscopy Techniques 8

Co-authors: Nuyen T. Linh J. C. Bourgoin H. J. von Bardeleben D. Stiévenard D. Deresmes M. Valladon Joël Chevrier J.L. Debrun
Journals: Applied Physics Letters (4 papers)Journal of Crystal Growth (4 papers)Japanese Journal of Applied Physics (2 papers)Surface and Interface Analysis (2 papers)Journal of Radioanalytical and Nuclear Chemistry (2 papers)
Partner nations: France United Kingdom Switzerland

In The Last Decade

A. M. Huber

32 papers receiving 728 citations

Peers

Countries citing papers authored by A. M. Huber

Since Specialization

Citations

This map shows the geographic impact of A. M. Huber's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. M. Huber with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. M. Huber more than expected).

Fields of papers citing papers by A. M. Huber

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. M. Huber. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. M. Huber. The network helps show where A. M. Huber may publish in the future.

Co-authors

The 25 scholars most cited alongside A. M. Huber, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. M. Huber Line = papers co-authored together A. M. Huber links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Crystal quality problems of epitaxial layer growth on indium phosphide A. M. Huber, C. Grattepain	2002	0
2	<title>Optimization of the MOVPE growth of ZnSe, ZnCdSe alloy and related heterostructures using various zinc precursor adducts</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·O. Briot, N. Briot, Thierry Cloître, R.L. Aulombard, F. Liaci, P. Bigenwald, Bernard Gil, Lesley M. Smith, S. Rushworth, Anita C. Jones, A. M. Huber, M. Gailhanou, Jean-Michel Sallèse	1994	3
3	Material qualify assessment of epitaxial layers of ZnSe and related compounds Materials Science and Engineering B ·A. M. Huber, N. Briot	1994	5
4	Secondary ion mass spectrometry of dopants and impurities in compound semiconductors: Depth profiling of homo- and heterostructure Applied Surface Science ·C. Grattepain, A. M. Huber	1991	1
5	Crystal Defect Study in III-V Compound Technology Materials science forum ·A. M. Huber, C. Grattepain	1989	11
6	Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates MRS Proceedings ·Manijeh Razeghi, M. Defour, F. Omnès, J. Nagle, P. Maurel, O. Acher, A. M. Huber, D. Mijuin	1988	3
7	Intense and sharply structured 1.54μm room-temperature luminescence of Er-doped GaAs/AlGaAs structures grown by MBE Electronics Letters ·M. N. Charasse, Pierre Galtier, A. M. Huber, C. Grattepain, J. Chazelas, J.P. Hirtz	1988	9
8	Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·A. M. Huber, J. Di Persio, M.A. di Forte-Poisson, C. Brylinski, R. Bisaro, C. Grattepain, O. Lagorsse	1987	5
9	A Model for the Atomic Configuration of the EL2 Defect in GaAs Materials science forum ·Didier Stiévenard, H. J. von Bardeleben, J. C. Bourgoin, A. M. Huber	1986	4
10	Applications of SIMS, SAES and XPS to problems in the semiconductor industry Surface and Interface Analysis ·P. Alnot, A. M. Huber, J. Olivier	1986	9
11	The Temperature-Dependent Diffusion Mechanism of Zn in InP Using the Semiclosed Diffusion Method Japanese Journal of Applied Physics ·K. Kaźmierski, A. M. Huber, G. Morillot, B. de Crémoux	1984	34
12	A comparative study of SIMS depth profiling of boron in silicon Surface and Interface Analysis ·J. B. Clegg, A. E. Morgan, H. A. M. de Grefte, F. Simondet, A. M. Huber, G. W. Blackmore, M. G. Dowsett, D. E. Sykes, C. W. Magee, V. R. Deline	1984	18
13	Characterization of Ga0.47In0.53As and Al0.48In0.52As layers grown lattice matched on InP by molecular beam epitaxy Journal of Crystal Growth ·J. Massies, J. F. Rochette, P. Étienne, P. Delescluse, A. M. Huber, Joël Chevrier	1983	23
14	ETUDE DES DEFAUTS DANS LES COUCHES HETEROEPITAXIALES DE MATERIAUX I I I-V PAR L'ANALYSE METALLOGRAPHIQUE SUR BISEAU CHIMIQUE Le Journal de Physique Colloques ·A. M. Huber, Gérard Laurencin, M. Razeghi	1983	2
15	Impurity redistribution in GaAs metalorganic vapor phase epilayers Applied Physics Letters ·A. M. Huber, G. Morillot, Muriel Bonnet, P. Merenda, G. Bessonneau	1982	4
16	Characterization of Semiconductor Materials by Charged Particle Activation IEEE Transactions on Nuclear Science ·G. Blondiaux, A. Giovagnoli, C. Koemmerer, M. Valladon, J.L. Debrun, J. Hallais, A. M. Huber	1981	5
17	Vapor growth of InP for MESFET’S Journal of Electronic Materials ·Joël Chevrier, M. Armand, A. M. Huber, Nuyen T. Linh	1980	22
18	Vapour phase epitaxy of InP: Growth kinetics and controlled doping Journal of Crystal Growth ·Joël Chevrier, A. M. Huber, Nuyen T. Linh	1979	9
19	Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs Journal of Applied Physics ·A. M. Huber, Nuyen T. Linh, M. Valladon, J.L. Debrun, G. M. Martin, A. Mitonneau, A. Mircéa	1979	88
20	Use of the ion microanalyzer for the characterization of bulk and epitaxial silicon and gallium arsenide Journal of Radioanalytical and Nuclear Chemistry ·A. M. Huber, M. Moulin	1972	0

About A. M. Huber

A. M. Huber is a scholar working on Nuclear Energy and Engineering, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics, Computational Mechanics and Electrical and Electronic Engineering, having authored 34 papers that have together received 834 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and devices (12 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Ion-surface interactions and analysis (10 papers), Electron and X-Ray Spectroscopy Techniques (8 papers), Semiconductor materials and interfaces (6 papers), Advanced Semiconductor Detectors and Materials (3 papers) and Advanced Materials Characterization Techniques (3 papers). The work is most often cited by research in Nuclear Energy and Engineering (9 citations), Atomic and Molecular Physics, and Optics (554 citations), Surfaces, Coatings and Films (93 citations), Electrical and Electronic Engineering (634 citations) and Condensed Matter Physics (75 citations). A. M. Huber has collaborated with scholars based in France, United Kingdom and Switzerland. Frequent co-authors include Nuyen T. Linh, J. C. Bourgoin, H. J. von Bardeleben, D. Stiévenard, D. Deresmes, M. Valladon, Joël Chevrier, J.L. Debrun, B. Toulouse and P.N. Favennec. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Japanese Journal of Applied Physics, Surface and Interface Analysis and Journal of Radioanalytical and Nuclear Chemistry.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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