V. V. Emtsev

848 citations

100 papers · 667 indexed · h-index 15

Nuclear Energy and Engineering top 10%
Electrical and Electronic Engineering top 10%
- Silicon and Solar Cell Technologies 63
- Semiconductor materials and devices 24
- Thin-Film Transistor Technologies 19
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 39
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 13
Materials Chemistry
- Silicon Nanostructures and Photoluminescence 26
Mechanics of Materials
- Muon and positron interactions and applications 12
Computational Mechanics
- Ion-surface interactions and analysis 11

Co-authors: C. A. Londos G. A. Oganesyan H. Ohyama D. S. Poloskin E. N. Sgourou V. Yu. Davydov K. Schmalz A. А. Lebedev
Cited by: Nuclear Energy and Engineering Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics
Journals: Physica B Condensed Matter (16 papers)Journal of Applied Physics (5 papers)Semiconductor Science and Technology (3 papers)
Partner nations: Russia Germany Greece

In The Last Decade

V. V. Emtsev

96 papers receiving 638 citations

Peers

Countries citing papers authored by V. V. Emtsev

Since Specialization

Citations

This map shows the geographic impact of V. V. Emtsev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. V. Emtsev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. V. Emtsev more than expected).

Fields of papers citing papers by V. V. Emtsev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. V. Emtsev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. V. Emtsev. The network helps show where V. V. Emtsev may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. V. Emtsev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. V. Emtsev Line = papers co-authored together V. V. Emtsev links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	RESTORATION OF WORN DETAILS OF AGRICULTURAL MACHINERY WITH GALVANIC COATINGS Polythematic Online Scientific Journal of Kuban State Agrarian University ·Rua Padre,V. H. Juárez-Huerta,Hnin Lai Lai Wai,V. V. Emtsev,Vandana Ch	2017	1
2	Positron annihilation on defects in silicon irradiated with 15 MeV protons Journal of Physics Condensed Matter ·関口相三,Mohamed Elsayed,R. Krause‐Rehberg,V. V. Emtsev,G. A. Oganesyan,坂田利康	2012	16
3	Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type Semiconductors ·V. V. Emtsev,Alena A. Maseykina,V. V. Kozlovski,A. А. Lebedev,G. A. Oganesyan,N. B. Strokan,G. Wagner	2012	30
4	Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion Physica B Condensed Matter ·関口相三,V. V. Emtsev	2009	1
5	Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide Materials science forum ·坂田利康,Е. В. Богданова,V. V. Emtsev,K. V. Emtsev,A. А. Lebedev,Manuel Roel	2005	6
6	Effect of carbon on oxygen precipitation in Czochralski silicon Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·C. A. Londos,Alejandro José de Melo,V. V. Emtsev	2005	18
7	Photosensitivity of Photocells Based on ZnO∕CdS∕Cu(In, Ga)Se[sub 2] Heterostructures and Exposed to γ-ray Radiation Semiconductors ·V. V. Emtsev	2005	5
8	Production and evolution of defects in neutron-irradiated Si subjected to thermal pre-treatments under hydrostatic pressure Journal of Physics Condensed Matter ·C. A. Londos,Gian Luigi Negro,Alejandro José de Melo,A. Misiuk,I. V. Antonova,V. V. Emtsev	2005	6
9	Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon Physica B Condensed Matter ·V. V. Emtsev,(unknown),B. A. Andreev,V. Yu. Davydov,D. S. Poloskin,G. A. Oganesyan,matthijs lemans,Barbara Elaine Born,(unknown),(unknown),A. Misiuk,C. A. Londos	2003	7
10	Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon Journal of Applied Physics ·C. A. Londos,Alejandro José de Melo,A. Misiuk,J. Ratajczak,V. V. Emtsev,Gian Luigi Negro	2003	6
11	Oxygen agglomeration and formation of oxygen‐related thermal donors in heat‐treated silicon Crystal Research and Technology ·V. V. Emtsev,C.A.J. Ammerlaan,G. A. Oganesyan,R. HILLtt,Henny Sri Rej,Fred Wilson,C. A. Londos,Alejandro José de Melo	2003	5
12	Double thermal donors in Czochralski‐grown silicon heat‐treated under atmospheric and high hydrostatic pressures physica status solidi (b) ·(unknown),(unknown),C.A.J. Ammerlaan,V. V. Emtsev,G. A. Oganesyan,B. A. Andreev,Gorachand Neogi,A. Misiuk,B. Surma,C. A. Londos	2002	22
13	Surface gettering of background impurities and defects in GaAs wafers Semiconductors ·L. S. Vlasenko,Lacreisha Nicole Ejike-King,V. V. Emtsev,Denis Zinkin,D. S. Poloskin,N. M. Shmidt	2001	5
14	Radiation-induced defects in n-type GaN and InN Physica B Condensed Matter ·V. V. Emtsev,V. Yu. Davydov,E. E. Häller,A. A. Klochikhin,M.E. Gershenson,G. A. Oganesyan,D. S. Poloskin,N. M. Shmidt,V. A. Vekshin,A. S. Usikov	2001	26
15	Surface Gettering Background Impurities and Defects in GaAs Plates Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·N. M. Shmidt,Lacreisha Nicole Ejike-King,V. V. Emtsev,Lina Ruth Harder,Alexander V. Markov,임보란,D. S. Poloskin,L. S. Vlasenko	1999	5
16	Degradation of the photoluminescence of porous silicon caused by {sup 60}Co {gamma} radiation Semiconductors ·E. V. Astrova,V. V. Emtsev,A. А. Lebedev	1995	4
17	On the nature and structures of different heat treatment centres in n- and p-type silicon Semiconductor Science and Technology ·Chung-Won Hwan,J.‐M. Spaeth,V. V. Emtsev,G. A. Oganesyan	1994	3
18	Annihilation of Frenkel pairs in semiconductors Semiconductors ·V. V. Emtsev,Adriane Schimidt Pasqualoto,Nikhil S Prakash,A. Tybulewicz	1993	1
19	Formation of ``new'' donors as a result of heat treatment of silicon with different oxygen concentrations Semiconductors ·B. A. Andreev,В. Г. Голубев,V. V. Emtsev,Г. И. Кропотов,G. A. Oganesyan,K. Schmalz,A. Tybulewicz	1993	1
20	Frenkel pairs in germanium and silicon (review) V. V. Emtsev,Adriane Schimidt Pasqualoto,Nikhil S Prakash	1992	1

About V. V. Emtsev

V. V. Emtsev is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 100 papers that have together received 667 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (63 papers), Semiconductor materials and interfaces (39 papers), Silicon Nanostructures and Photoluminescence (26 papers), Semiconductor materials and devices (24 papers), Thin-Film Transistor Technologies (19 papers), GaN-based semiconductor devices and materials (13 papers), Muon and positron interactions and applications (12 papers) and Ion-surface interactions and analysis (11 papers). The work is most often cited by research in Nuclear Energy and Engineering (5 citations), Electrical and Electronic Engineering (554 citations) and Atomic and Molecular Physics, and Optics (271 citations). V. V. Emtsev has collaborated with scholars based in Russia, Germany and Greece. Frequent co-authors include C. A. Londos, G. A. Oganesyan, H. Ohyama, D. S. Poloskin, E. N. Sgourou, V. Yu. Davydov, K. Schmalz, A. А. Lebedev, N. M. Shmidt and A. Misiuk. Their work appears in journals such as Physica B Condensed Matter, Journal of Applied Physics, Semiconductor Science and Technology, physica status solidi (b) and Materials Science and Engineering B.

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