V.Ya. Bratus

421 total citations
35 papers, 315 citations indexed

About

V.Ya. Bratus is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, V.Ya. Bratus has authored 35 papers receiving a total of 315 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in V.Ya. Bratus's work include Semiconductor materials and devices (17 papers), Silicon Nanostructures and Photoluminescence (13 papers) and Silicon Carbide Semiconductor Technologies (12 papers). V.Ya. Bratus is often cited by papers focused on Semiconductor materials and devices (17 papers), Silicon Nanostructures and Photoluminescence (13 papers) and Silicon Carbide Semiconductor Technologies (12 papers). V.Ya. Bratus collaborates with scholars based in Ukraine, France and United Kingdom. V.Ya. Bratus's co-authors include Taras Petrenko, M. Ya. Valakh, H. J. von Bardeleben, T. Komoda, P.L.F. Hemment, I. P. Vorona, А. A. Konchits, И. З. Индутный, I. B. Yanchuk and J. L. Monge and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Physical Review B.

In The Last Decade

V.Ya. Bratus

35 papers receiving 303 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V.Ya. Bratus Ukraine	9	227	183	71	65	48	35	315
L. C. Barbosa Brazil	13	183 0.8×	257 1.4×	119 1.7×	78 1.2×	45 0.9×	32	374
Kazuro Murayama Japan	10	235 1.0×	324 1.8×	87 1.2×	108 1.7×	18 0.4×	45	374
Hiroshi Yamada‐Kaneta Japan	10	285 1.3×	200 1.1×	148 2.1×	35 0.5×	15 0.3×	53	371
Maohui Yuan China	12	211 0.9×	314 1.7×	90 1.3×	62 1.0×	38 0.8×	32	379
Wolcott Gibbs Australia	12	235 1.0×	181 1.0×	98 1.4×	45 0.7×	26 0.5×	34	352
P. V. Shapkin Russia	11	432 1.9×	239 1.3×	230 3.2×	46 0.7×	22 0.5×	59	491
W.J. Mosby United States	7	259 1.1×	81 0.4×	181 2.5×	28 0.4×	10 0.2×	13	349
Hervé Lhermite France	12	421 1.9×	345 1.9×	110 1.5×	103 1.6×	56 1.2×	41	548
A. Mlayah France	11	218 1.0×	207 1.1×	201 2.8×	62 1.0×	41 0.9×	22	340
S. P. Depinna United Kingdom	13	339 1.5×	342 1.9×	144 2.0×	22 0.3×	20 0.4×	23	449

Countries citing papers authored by V.Ya. Bratus

Since Specialization

Citations

This map shows the geographic impact of V.Ya. Bratus's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V.Ya. Bratus with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V.Ya. Bratus more than expected).

Fields of papers citing papers by V.Ya. Bratus

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V.Ya. Bratus. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V.Ya. Bratus. The network helps show where V.Ya. Bratus may publish in the future.

Co-authorship network of co-authors of V.Ya. Bratus

This figure shows the co-authorship network connecting the top 25 collaborators of V.Ya. Bratus. A scholar is included among the top collaborators of V.Ya. Bratus based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V.Ya. Bratus. V.Ya. Bratus is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bratus, V.Ya., В. И. Иващенко, L. A. Ivashchenko, et al.. (2025). The low-temperature photoluminescence of thin PECVD Si–C–N–H films: An effect of hydrogenation. Optical Materials. 160. 116751–116751. 1 indexed citations

Литовченко, В. Г., et al.. (2016). Radiation Induced Enhancement of Hydrogen Influence on Luminescent Properties of nc-Si/SiO2 Structures. Nanoscale Research Letters. 11(1). 545–545. 6 indexed citations

Bratus, V.Ya.. (2015). Thermal annealing and evolution of defects in neutron-irradiated cubic SiC. Semiconductor Physics Quantum Electronics & Optoelectronics. 18(4). 403–409. 1 indexed citations

Bratus, V.Ya., et al.. (2013). Behavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin. Ukrainian Journal of Physics. 58(12). 1165–1170. 2 indexed citations

Bratus, V.Ya., et al.. (2013). An EPR investigation of SiOx films with columnar structure. Physica B Condensed Matter. 453. 26–28. 3 indexed citations

Torchynska, T.V., et al.. (2009). X-ray diffraction and electron paramagnetic resonance study of porous 6H-SiC. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(2). 849–853. 2 indexed citations

Malovichko, G., et al.. (2008). Magnetic Resonance Study of Non-Equivalent Centers Created by 4f-Ions in Congruent and Stoichiometric Lithium Niobate. MRS Proceedings. 1111. 3 indexed citations

Bratus, V.Ya., et al.. (2008). Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis. Technical Physics Letters. 34(7). 612–614. 8 indexed citations

Malovichko, G., et al.. (2007). Multifrequency spectroscopy of laser active centers Nd³⁺ and Yb³⁺ in nearly stoichiometric LiNbO₃. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(3). 1346–1351. 6 indexed citations

10.

Bratus, V.Ya., et al.. (2004). ESR studies of nanocrystalline silicon films obtained by pulsed laser ablation of silicon targets. Semiconductors. 38(5). 598–602. 1 indexed citations

11.

Petrenko, Taras, et al.. (2002). The carbon 100 split interstitial in SiC. Journal of Physics Condensed Matter. 14(47). 12433–12440. 45 indexed citations

12.

Bratus, V.Ya., et al.. (2001). Positively charged carbon vacancy in 6H–SiC: EPR study. Physica B Condensed Matter. 308-310. 621–624. 18 indexed citations

13.

Petrenko, Taras, et al.. (2001). Calculation of hyperfine parameters of positively charged carbon vacancy in SiC. Physica B Condensed Matter. 308-310. 637–640. 8 indexed citations

14.

Petrenko, Taras, et al.. (2001). Symmetry, spin state and hyperfine parameters of vacancies in cubic SiC. Applied Surface Science. 184(1-4). 273–277. 7 indexed citations

15.

Valakh, M. Ya., et al.. (1999). Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers. Journal of Applied Physics. 85(1). 168–173. 40 indexed citations

16.

Bardeleben, H. J. von, et al.. (1995). Defects in luminescent and non-luminescent porous Si. Thin Solid Films. 255(1-2). 163–166. 4 indexed citations

17.

Baran, N. P., et al.. (1993). Electron spin resonance of boron in cubic SiC: manifestation of the Jahn-Teller effect. Physics of the Solid State. 35(11). 1544–1548. 7 indexed citations

18.

Bratus, V.Ya., et al.. (1993). Electronic Structure of Boron in Silicon Carbide. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 103-105. 645–654. 1 indexed citations

19.

Bratus, V.Ya., et al.. (1993). Boron in Cubic Silicon Carbide: Dynamic Effects in ESR. Materials science forum. 143-147. 81–86. 5 indexed citations

20.

Bratus, V.Ya., et al.. (1976). ESR and spin relaxation of deep centers in semiconductors in the presence of photoelectrons (Si:Fe 0 ). JETP. 42. 1073. 1 indexed citations

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