M. Roeckerath

2.0k citations

26 papers · 651 indexed · h-index 18

Electronic, Optical and Magnetic Materials top 10%
- Magnetic and transport properties of perovskites and related materials 5
- Copper Interconnects and Reliability 4
- Multiferroics and related materials 3
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides 21
- Ferroelectric and Piezoelectric Materials 8
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 21
- Ferroelectric and Negative Capacitance Devices 9
- Advancements in Semiconductor Devices and Circuit Design 2
Condensed Matter Physics
Atomic and Molecular Physics, and Optics

Co-authors: J. Schubert J. M. J. Lopes S. Mantl Darrell G. Schlom T. Heeg St. Lenk M. Luysberg E. Rije
Cited by: Electronic, Optical and Magnetic Materials Materials Chemistry Electrical and Electronic Engineering
Journals: Applied Physics Letters (8 papers)Microelectronic Engineering (4 papers)Applied Physics A (4 papers)
Partner nations: Germany United States Belgium

In The Last Decade

M. Roeckerath

26 papers receiving 619 citations

Peers

Countries citing papers authored by M. Roeckerath

Since Specialization

Citations

This map shows the geographic impact of M. Roeckerath's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Roeckerath with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Roeckerath more than expected).

Fields of papers citing papers by M. Roeckerath

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Roeckerath. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Roeckerath. The network helps show where M. Roeckerath may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Roeckerath, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Roeckerath Line = papers co-authored together M. Roeckerath links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size Journal of Materials Chemistry ·Sherriff T.C. Luk,M. Roeckerath,J. M. J. Lopes,J. Schubert,Kenichiro Mizohata,Matti Putkonen,Lauri Niinistö	2010	30
2	Amorphous ternary rare-earth gate oxides for future integration in MOSFETs Microelectronic Engineering ·J. M. J. Lopes,Ronald Germain,M. Roeckerath,U. Littmark,R. Lupták,St. Lenk,M. Luysberg,Astrid Besmehn,U. Breuer,J. Schubert,S. Mantl	2009	50
3	Rare-earth based alternative gate dielectrics for future integration in MOSFETs J. M. J. Lopes,Roro Ayu Deby Citra Putri,M. Roeckerath,U. Littmark,R. Lupták,St. Lenk,Astrid Besmehn,U. Breuer,J. Schubert,S. Mantl	2009	4
4	Optical band gap and magnetic properties of unstrained EuTiO3 films Applied Physics Letters ·В.А. Тишков,Xianglin Ke,Nikolas J. Podraza,Lena F. Kourkoutis,T. Heeg,M. Roeckerath,J. W. Freeland,Craig J. Fennie,J. Schubert,David A. Muller,P. Schiffer,Darrell G. Schlom	2009	62
5	Intermixing and charge neutrality at DyScO3/SrTiO3 interfaces Acta Materialia ·M. Luysberg,Markus Heidelmann,Lothar Houben,Markus Boese,T. Heeg,J. Schubert,M. Roeckerath	2009	17
6	Photoconductivity of Hf-based binary metal oxide systems Journal of Applied Physics ·S. Shamuilia,V. V. Afanas’ev,A. Stesmans,Ezikwa Tenas Godswill,S.A. Campbell,Mohamed Boutchich,M. Roeckerath,T. Heeg,J. M. J. Lopes,J. Schubert	2008	12
7	Photoconductivity of Hf-based binary metal oxides Microelectronic Engineering ·S. Shamuilia,H. Seshadri,A. Stesmans,Ezikwa Tenas Godswill,Stephen A. Campbell,Mohamed Boutchich,J. M. J. Lopes,M. Roeckerath,T. Heeg,E. Rije,S. Mantl	2008	2
8	SmScO 3 thin films as an alternative gate dielectric Applied Physics Letters ·Ronald Germain,J. M. J. Lopes,M. Roeckerath,St. Lenk,B. Holländer,Yufei Jia,Darrell G. Schlom,J. Schubert,S. Mantl	2008	19
9	Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon Applied Physics A ·M. Roeckerath,J. M. J. Lopes,Ronald Germain,C. Sandow,St. Lenk,T. Heeg,J. Schubert,S. Mantl	2008	20
10	Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric Thin Solid Films ·M. Roeckerath,T. Heeg,J. M. J. Lopes,J. Schubert,S. Mantl,Astrid Besmehn,Sherriff T.C. Luk,Lauri Niinistö	2008	27
11	Epitaxially stabilized growth of orthorhombic LuScO3 thin films Applied Physics Letters ·T. Heeg,M. Roeckerath,J. Schubert,W. Zander,Ch. Buchal,З С Дымова,Chun‐Lin Jia,Yonglei Jia,Carolina Adamo,Darrell G. Schlom	2007	12
12	Growth of Dysprosium‐, Scandium‐, and Hafnium‐based Third Generation High‐κ Dielectrics by Atomic Vapor Deposition Chemical Vapor Deposition ·Christoph Adelmann,P. Lehnen,Sven Van Elshocht,Chao Zhao,Bert Brijs,Alexis Franquet,Thierry Conard,M. Roeckerath,J. Schubert,Л. С. Кращук,C. Lohe,(unknown)	2007	24
13	Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3 Microelectronic Engineering ·V. V. Afanas’ev,S. Shamuilia,M. Badylevich,A. Stesmans,L. F. Edge,Wei Tian,Darrell G. Schlom,J. M. J. Lopes,M. Roeckerath,J. Schubert	2007	35
14	Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-κ films prepared by molecular beam deposition Journal of Applied Physics ·J. M. J. Lopes,U. Littmark,M. Roeckerath,St. Lenk,J. Schubert,S. Mantl,Astrid Besmehn	2007	26
15	Liquid Injection MOCVD of Dysprosium Scandate Films Journal of The Electrochemical Society ·Reji Thomas,P. Ehrhart,M. Roeckerath,Sven Van Elshocht,E. Rije,M. Luysberg,Markus Boese,J. Schubert,Matty Caymax,Rainer Waser	2007	27
16	Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer deposition Applied Physics A ·Sherriff T.C. Luk,M. Roeckerath,Matti Putkonen,St. Lenk,J. Schubert,Lauri Niinistö,S. Mantl	2007	25
17	La-based ternary rare-earth oxides as alternative high-κ dielectrics Microelectronic Engineering ·J. M. J. Lopes,M. Roeckerath,T. Heeg,U. Littmark,J. Schubert,S. Mantl,Yan Jia,Darrell G. Schlom	2007	27
18	Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric Robyn Hooper,M. Roeckerath,Gayatri Tl,Nadratul Azmi,Andrew J. Fox,J. Schubert,N. Kaluza,M. Marso,H. Lüth,P. Kordoš	2006	1
19	Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric Applied Physics Letters ·J. M. J. Lopes,M. Roeckerath,T. Heeg,E. Rije,J. Schubert,S. Mantl,V. V. Afanas’ev,S. Shamuilia,A. Stesmans,Yufei Jia,Darrell G. Schlom	2006	71
20	Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition Applied Physics Letters ·Reji Thomas,P. Ehrhart,M. Luysberg,Markus Boese,Rainer Waser,M. Roeckerath,E. Rije,J. Schubert,Sven Van Elshocht,Matty Caymax	2006	39

About M. Roeckerath

M. Roeckerath is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics and Infectious Diseases, having authored 26 papers that have together received 651 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Electronic and Structural Properties of Oxides (21 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Ferroelectric and Piezoelectric Materials (8 papers), Magnetic and transport properties of perovskites and related materials (5 papers), Copper Interconnects and Reliability (4 papers), Multiferroics and related materials (3 papers) and Advancements in Semiconductor Devices and Circuit Design (2 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (238 citations), Materials Chemistry (504 citations), Electrical and Electronic Engineering (463 citations), Condensed Matter Physics (57 citations) and Atomic and Molecular Physics, and Optics (71 citations). M. Roeckerath has collaborated with scholars based in Germany, United States and Belgium. Frequent co-authors include J. Schubert, J. M. J. Lopes, S. Mantl, Darrell G. Schlom, T. Heeg, St. Lenk, M. Luysberg, E. Rije, U. Littmark and Astrid Besmehn. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Applied Physics A, Journal of Applied Physics and Chemical Vapor Deposition.

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