C. J. Polley

430 total citations
16 papers, 376 citations indexed

About

C. J. Polley is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, C. J. Polley has authored 16 papers receiving a total of 376 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 12 papers in Electronic, Optical and Magnetic Materials and 8 papers in Electrical and Electronic Engineering. Recurrent topics in C. J. Polley's work include GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (12 papers) and Silicon Carbide Semiconductor Technologies (4 papers). C. J. Polley is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (12 papers) and Silicon Carbide Semiconductor Technologies (4 papers). C. J. Polley collaborates with scholars based in United States and New Zealand. C. J. Polley's co-authors include P. P. Chow, F. Ren, S. J. Pearton, A. M. Wowchack, J. W. Johnson, Albert G. Baca, A. M. Dabiran, B. Luo, K. K. Allums and C. R. Abernathy and has published in prestigious journals such as Applied Physics Letters, Solid-State Electronics and Journal of Luminescence.

In The Last Decade

C. J. Polley

16 papers receiving 363 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. J. Polley United States 11 333 238 213 93 79 16 376
B. Peres United States 12 347 1.0× 282 1.2× 209 1.0× 100 1.1× 51 0.6× 21 401
T. N. Fogarty United States 9 247 0.7× 263 1.1× 200 0.9× 101 1.1× 78 1.0× 21 371
A. M. Wowchack United States 9 332 1.0× 233 1.0× 239 1.1× 110 1.2× 58 0.7× 10 366
C.H. Liu Taiwan 9 272 0.8× 171 0.7× 128 0.6× 160 1.7× 109 1.4× 11 350
L. McCray United States 8 373 1.1× 318 1.3× 138 0.6× 62 0.7× 118 1.5× 13 396
N. Defrance France 11 356 1.1× 302 1.3× 142 0.7× 85 0.9× 71 0.9× 33 410
J.-I. Chyi Taiwan 10 324 1.0× 339 1.4× 173 0.8× 105 1.1× 76 1.0× 20 410
S. S. Su China 10 250 0.8× 250 1.1× 205 1.0× 72 0.8× 69 0.9× 25 341
Masayoshi Kosaki Japan 11 375 1.1× 233 1.0× 173 0.8× 113 1.2× 89 1.1× 28 401
Jori Lemettinen Finland 11 336 1.0× 219 0.9× 178 0.8× 109 1.2× 71 0.9× 20 388

Countries citing papers authored by C. J. Polley

Since Specialization
Citations

This map shows the geographic impact of C. J. Polley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. J. Polley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. J. Polley more than expected).

Fields of papers citing papers by C. J. Polley

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. J. Polley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. J. Polley. The network helps show where C. J. Polley may publish in the future.

Co-authorship network of co-authors of C. J. Polley

This figure shows the co-authorship network connecting the top 25 collaborators of C. J. Polley. A scholar is included among the top collaborators of C. J. Polley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. J. Polley. C. J. Polley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Reeves, Roger J., et al.. (2009). Laser spectroscopy of CaF2:Eu:Sm thin films grown by pulsed laser deposition. Journal of Luminescence. 129(12). 1673–1676. 13 indexed citations
2.
Luo, B., J. W. Johnson, F. Ren, et al.. (2002). High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors. Journal of Electronic Materials. 31(5). 437–441. 48 indexed citations
3.
Luo, B., J. W. Johnson, F. Ren, et al.. (2002). Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 80(4). 604–606. 76 indexed citations
4.
Johnson, J. W., Albert G. Baca, R. D. Briggs, et al.. (2001). Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE. Solid-State Electronics. 45(12). 1979–1985. 29 indexed citations
5.
Luo, B., J. W. Johnson, F. Ren, et al.. (2001). dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 79(14). 2196–2198. 102 indexed citations
6.
Dang, G., B. Luo, X. A. Cao, et al.. (2000). npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions. Solid-State Electronics. 44(12). 2097–2100. 8 indexed citations
7.
Chow, Peter, et al.. (2000). Group III-nitride materials for ultraviolet detection applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3948. 295–295. 10 indexed citations
8.
Cao, Xi, J. M. Van Hove, Jody J. Klaassen, et al.. (2000). Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures. Solid-State Electronics. 44(7). 1255–1259. 11 indexed citations
9.
Cao, X. A., J. M. Van Hove, Jody J. Klaassen, et al.. (2000). High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors. Solid-State Electronics. 44(4). 649–654. 13 indexed citations
10.
Hickman, R., J. M. Van Hove, P. P. Chow, et al.. (2000). GaN PN junction issues and developments. Solid-State Electronics. 44(2). 377–381. 23 indexed citations
11.
Cao, X. A., J. M. Van Hove, Jody J. Klaassen, et al.. (2000). Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures. Solid-State Electronics. 44(7). 1261–1265. 10 indexed citations
12.
Hove, J. M. Van, P. P. Chow, A. M. Wowchak, et al.. (1998). Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1286–1288. 11 indexed citations
13.
Hickman, R., J. M. Van Hove, P. P. Chow, et al.. (1998). Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy. Solid-State Electronics. 42(12). 2183–2185. 4 indexed citations
14.
Hove, J. M. Van, P. P. Chow, Jody J. Klaassen, et al.. (1997). Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence. MRS Proceedings. 468. 8 indexed citations
15.
Hove, J. M. Van, P. P. Chow, R. Hickman, et al.. (1997). High Temperature GaN and AlGaN Photovoltaic Detectors for UV Sensing Applications. MRS Proceedings. 482. 1 indexed citations
16.
Hove, J. M. Van, P. P. Chow, R. Hickman, et al.. (1996). Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE. MRS Proceedings. 449. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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