M.E. Sherwin

796 citations

48 papers · 637 indexed · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena

Papers in

Atomic and Molecular Physics, and Optics 33
- Semiconductor Quantum Structures and Devices 27
- Semiconductor materials and interfaces 5
- Quantum and electron transport phenomena 5
Electrical and Electronic Engineering 43
- Semiconductor materials and devices 20
- Advancements in Semiconductor Devices and Circuit Design 15
- Silicon Carbide Semiconductor Technologies 9
- Integrated Circuits and Semiconductor Failure Analysis 5
- Semiconductor Lasers and Optical Devices 5

Co-authors: T. J. Drummond Robert S. Howell Albert G. Baca N.E. Harff G.O. Munns Richard S. Potember Henry Hu J. F. Klem
Journals: Journal of Crystal Growth (6 papers)Applied Physics Letters (4 papers)Journal of Applied Physics (4 papers)Journal of Electronic Materials (4 papers)IEEE Transactions on Electron Devices (3 papers)
Partner nations: United States Germany

In The Last Decade

M.E. Sherwin

44 papers receiving 604 citations

Peers

Countries citing papers authored by M.E. Sherwin

Since Specialization

Citations

This map shows the geographic impact of M.E. Sherwin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.E. Sherwin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.E. Sherwin more than expected).

Fields of papers citing papers by M.E. Sherwin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.E. Sherwin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.E. Sherwin. The network helps show where M.E. Sherwin may publish in the future.

Co-authors

The 25 scholars most cited alongside M.E. Sherwin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.E. Sherwin Line = papers co-authored together M.E. Sherwin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	10 kV Silicon Carbide Junction Barrier Schottky Rectifier Materials science forum ·Ty McNutt, Antonio Arroyo, Andy Walker, James E. Dusenberry, Christopher W. Kirby, M.E. Sherwin, Ranbir Singh, Jordyn Dangan	2008	2
2	Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs IEEE Transactions on Electron Devices ·Robert S. Howell, 東京芸術大学美術学部点検評価委員会, Antonio Arroyo, Ty McNutt, Jordyn Dangan, 實入澤, M.E. Sherwin, R.C. Clarke, Ranbir Singh	2008	8
3	Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion Materials science forum ·P. T. Cox, Ty McNutt, M.E. Sherwin, Antonio Arroyo, Ranbir Singh, Наталья Сидорова	2008	6
4	Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25–200 °C operating temperatures Robert S. Howell, 東京芸術大学美術学部点検評価委員会, Antonio Arroyo, Ty McNutt, Bettina Nechay, M.E. Sherwin, Ranbir Singh	2007	4
5	Advanced SiC Power Modules for 13.8 kV Power Distribution Naval Engineers Journal ·Ty McNutt, M.E. Sherwin, Грицаенко Полина Сергеевна, Robert S. Howell, Andy Walker, James E. Dusenberry, Jordyn Dangan, Tien Quyet Ly, H. Jeon, Г А Файзуллина, Bettina Nechay, Ranbir Singh, Scott Leslie, Jih‐Sheng Lai	2007	1
6	PVT Growth at High Temperature: Wide Bandgap Semiconductors ECS Meeting Abstracts ·Sarah Wheatley, B. Wagner, M.E. Sherwin, Pang Xue-min, M. E. Aumer, Darren B. Thomson, Kazuhiro Takimoto, 光政藤塚, H.I. Marsden	2006	0
7	F/sub max/-enhancement in CBE-grown InAlAs/InGaAs HEMT's using novel self-aligned offset-gate technology Youngwoo Kwon, T. Brock, Geok Ing Ng, D. Pavlidis, G.O. Munns, M.E. Sherwin, G.I. Haddad	2003	1
8	Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures Superlattices and Microstructures ·橋本敬一郎, J. A. Simmons, N.E. Harff, M.E. Sherwin, Charles Holsey, Louis Resnick, H. C. Chui	1996	47
9	Etching of sub-0.5 µm W/WSi _x bilayer gates Electronics Letters ·R. J. Shul, M.E. Sherwin, Albert G. Baca, D. J. Rieger	1996	10
10	Trenching observed during sidewall formation inGaAs self-aligned refractory gate FETs Electronics Letters ·Albert G. Baca, A. J. Howard, R. J. Shul, M.E. Sherwin	1996	1
11	Magnetic focusing in parallel quantum point contacts Physical review. B, Condensed matter ·K. Collier, J. A. Simmons, M.E. Sherwin, J. F. Klem	1995	4
12	Complementary GaAs junction-gated heterostructure field effect transistor technology Albert G. Baca, J.C. Zolper, M.E. Sherwin, 原英則, R. J. Shul, A. J. Howard, D. J. Rieger, John F. Klem	1994	7
13	An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact IEEE Transactions on Electron Devices ·J.C. Zolper, Albert G. Baca, R. J. Shul, A. J. Howard, D. J. Rieger, M.E. Sherwin, M. L. Lovejoy, Harold P. Hjalmarson, B.L. Draper, John F. Klem, V.M. Hietala	1994	8
14	An all implanted self-aligned enhancement mode n-JFET with Zn gates for GaAs digital applications IEEE Electron Device Letters ·M.E. Sherwin, J.C. Zolper, Albert G. Baca, R. J. Shul, A. J. Howard, D. J. Rieger, John F. Klem, V.M. Hietala	1994	8
15	Submicron, footprint, air bridges defined by electron beam lithography Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M.E. Sherwin, 眞明佐竹, Joel R. Wendt	1993	2
16	Submicrometer control of two-dimensional–two-dimensional magnetotunneling in double-well heterostructures Physical review. B, Condensed matter ·J. A. Simmons, S. K. Lyo, J. F. Klem, M.E. Sherwin, W. Neuss	1993	33
17	InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE Journal of Crystal Growth ·G.O. Munns, M.E. Sherwin, T. Brock, G.I. Haddad, Youngwoo Kwon, Geok Ing Ng, D. Pavlidis	1992	5
18	Technical aspects of InGaAs MOMBE — shutter action, system drift, and material quality Journal of Crystal Growth ·Maureen M Canario de la Torre, M.E. Sherwin, G.O. Munns, G.I. Haddad	1991	2
19	Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β-SiC Journal of Applied Physics ·M.E. Sherwin, T. J. Drummond	1991	184
20	Analytic MODFET models beyond the triangular well approximation Solid-State Electronics ·郜庭秀, M.E. Sherwin	1990	2

About M.E. Sherwin

M.E. Sherwin is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Ceramics and Composites and Electronic, Optical and Magnetic Materials, having authored 48 papers that have together received 637 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (27 papers), Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor materials and interfaces (5 papers), Quantum and electron transport phenomena (5 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers) and Semiconductor Lasers and Optical Devices (5 papers). The work is most often cited by research in Condensed Matter Physics (214 citations), Atomic and Molecular Physics, and Optics (297 citations), Electrical and Electronic Engineering (400 citations), Electronic, Optical and Magnetic Materials (93 citations) and Materials Chemistry (217 citations). M.E. Sherwin has collaborated with scholars based in United States and Germany. Frequent co-authors include T. J. Drummond, Robert S. Howell, Albert G. Baca, N.E. Harff, G.O. Munns, Richard S. Potember, Henry Hu, J. F. Klem, J. A. Simmons and Robert M. Young. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, Journal of Applied Physics, Journal of Electronic Materials and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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