J. W. Lee

403 citations

18 papers · 318 indexed · h-index 10

Co-authors: S. J. Pearton W. C. Dautremont–Smith R. A. Stall J.C. Zolper D. J. Rieger Albert G. Baca Todd R. Hayes H. S. Luftman
Topics: Semiconductor materials and devices (14 papers)Semiconductor Quantum Structures and Devices (6 papers)GaN-based semiconductor devices and materials (6 papers)
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: United States Germany

In The Last Decade

J. W. Lee

18 papers receiving 306 citations

Peers

Countries citing papers authored by J. W. Lee

Since Specialization

Citations

This map shows the geographic impact of J. W. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. W. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. W. Lee more than expected).

Fields of papers citing papers by J. W. Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. W. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. W. Lee. The network helps show where J. W. Lee may publish in the future.

Co-authorship network of co-authors of J. W. Lee

This figure shows the co-authorship network connecting the top 25 collaborators of J. W. Lee. A scholar is included among the top collaborators of J. W. Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. W. Lee. J. W. Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

#	Work	Indexed citations
1	Plasma Damage Effects in InAlN Field Effect Transistors 1997 ·MRS Proceedings ·F. Ren,J. R. Lothian,(unknown),J. D. MacKenzie,S. M. Donovan,C. R. Abernathy,(unknown),J. W. Lee,S. J. Pearton,R. G. Wilson	2
2	Patterning of Cu, Co, Fe, and Ag for magnetic nanostructures 1997 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·K. B. Jung,J. W. Lee,(unknown),(unknown),J. R. Childress,S. J. Pearton,F. Ren	10
3	Sputtered AlN encapsulant for high-temperature annealing of GaN 1996 ·Applied Physics Letters ·J.C. Zolper,D. J. Rieger,Albert G. Baca,S. J. Pearton,J. W. Lee,R. A. Stall	76
4	Dry Etch Damage In InN, InGaN and InAIN 1996 ·MRS Proceedings ·S. J. Pearton,J. W. Lee,J. D. MacKenzie,C. B. Vartuli,S. M. Donovan,C. R. Abernathy,R. J. Shul,F. Ren,J. R. Lothian	1
5	Electron Cyclotron Resonance Etching of SiC in SF₆/O₂ and NF₃ /O₂ Plasmas 1996 ·MRS Proceedings ·F. Ren,J. M. Grow,Madhu Bhaskaran,J. W. Lee,C. B. Vartuli,J. R. Lothian,J. R. Flemish	6
6	Effect of BCl3 Dry Etching on InAlN Surface Properties 1996 ·Journal of The Electrochemical Society ·F. Ren,J. R. Lothian,(unknown),J. D. MacKenzie,S. M. Donovan,C. B. Vartuli,C. R. Abernathy,J. W. Lee,S. J. Pearton	11
7	Hydrogen passivation of Ca acceptors in GaN 1996 ·Applied Physics Letters ·J. W. Lee,S. J. Pearton,J.C. Zolper,R. A. Stall	32
8	Wet Chemical Etching of Al0.5In0.5 P 1995 ·Journal of The Electrochemical Society ·J. W. Lee,S. J. Pearton,C. R. Abernathy,W. S. Hobson,F. Ren,Changyu Wu	10
9	Comparison of H+ and He+ implant isolation of GaAs-based heterojunction bipolar transistors 1995 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. J. Pearton,C. R. Abernathy,J. W. Lee,F. Ren,C.S. Wu	25
10	Growth of InGaAs/InP quantum well structures by low-pressure metalorganic chemical vapor deposition 1992 ·Microelectronic Engineering ·V. R. McCrary,J. W. Lee,S. N. G. Chu,(unknown),(unknown),G. Livescu,Thomas Pottier,L.J.P. Ketelsen,J. L. Zilko	4
11	Growth of InGaAsP/InP single-quantum-well and multiple-quantum well structures by low-pressure metal-organic chemical vapor deposition 1991 ·Journal of Applied Physics ·V. R. McCrary,J. W. Lee,S. N. G. Chu,(unknown),(unknown),G. Livescu,Thomas Pottier,L.J.P. Ketelsen,J. L. Zilko	1
12	Surface Protection during Plasma Hydrogenation for Acceptor Passivation in InP 1989 ·MRS Proceedings ·J. Lopata,W. C. Dautremont–Smith,S. J. Pearton,J. W. Lee,Nguyễn Thị Thanh Hà,H. S. Luftman	4
13	Passivation of acceptors in InP resulting from CH4/H2 reactive ion etching 1989 ·Applied Physics Letters ·Todd R. Hayes,W. C. Dautremont–Smith,H. S. Luftman,J. W. Lee	46
14	Pt/Ti/p-InGaAsP nonalloyed ohmic contact formed by rapid thermal processing 1989 ·Journal of Applied Physics ·A. Katz,W. C. Dautremont–Smith,Thomas Pottier,L. A. Koszi,J. W. Lee,V. G. Riggs,Robert L. Brown,J. L. Zilko,A. Lahav	26
15	Pt/Ti/p-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing 1989 ·Applied Physics Letters ·A. Katz,W. C. Dautremont–Smith,S. N. G. Chu,Thomas Pottier,L. A. Koszi,J. W. Lee,V. G. Riggs,Robert L. Brown,(unknown),J. L. Zilko,A. Lahav	42
16	Control and Variation of Stress in Pecvd SiN_x Films on InP 1988 ·MRS Proceedings ·J. Lopata,W. C. Dautremont–Smith,J. W. Lee	1
17	Deposition of zirconium boride thin films by direct current triode sputtering 1987 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·U. K. Chakrabarti,H. Barz,W. C. Dautremont–Smith,J. W. Lee,T. Y. Kometani	18
18	Elastic Stresses in InGaAsP Heterostructures with Alloyed Contact Metallizations 1986 ·MRS Proceedings ·V. Swaminathan,J. Lopata,J. W. Lee	3

About J. W. Lee

J. W. Lee is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Surfaces, Coatings and Films, having authored 18 papers that have together received 318 indexed citations. Recurring topics across this work include Semiconductor materials and devices (14 papers), Semiconductor Quantum Structures and Devices (6 papers) and GaN-based semiconductor devices and materials (6 papers). The work is most often cited by research in Condensed Matter Physics (122 citations), Electrical and Electronic Engineering (262 citations) and Atomic and Molecular Physics, and Optics (139 citations). J. W. Lee has collaborated with scholars based in United States and Germany. Frequent co-authors include S. J. Pearton, W. C. Dautremont–Smith, R. A. Stall, J.C. Zolper, D. J. Rieger, Albert G. Baca, Todd R. Hayes, H. S. Luftman, F. Ren and J. L. Zilko. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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