J. W. Lee

417 total citations
18 papers, 319 citations indexed

About

J. W. Lee is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Mechanics of Materials. According to data from OpenAlex, J. W. Lee has authored 18 papers receiving a total of 319 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 8 papers in Condensed Matter Physics and 5 papers in Mechanics of Materials. Recurrent topics in J. W. Lee's work include Semiconductor materials and devices (14 papers), Plasma Diagnostics and Applications (10 papers) and GaN-based semiconductor devices and materials (8 papers). J. W. Lee is often cited by papers focused on Semiconductor materials and devices (14 papers), Plasma Diagnostics and Applications (10 papers) and GaN-based semiconductor devices and materials (8 papers). J. W. Lee collaborates with scholars based in United States and Germany. J. W. Lee's co-authors include S. J. Pearton, R. J. Shul, C. R. Abernathy, C. Constantine, C. Barratt, R. D. Briggs, F. Ren, C. B. Vartuli, D. J. Rieger and G McClellan and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In The Last Decade

J. W. Lee

18 papers receiving 311 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. W. Lee United States	10	258	130	79	67	63	18	319
Franz Eberhard Germany	10	201 0.8×	193 1.5×	87 1.1×	33 0.5×	145 2.3×	22	318
Y. Otoki Japan	6	244 0.9×	277 2.1×	79 1.0×	21 0.3×	83 1.3×	13	334
Wolfgang Jantsch Austria	9	181 0.7×	96 0.7×	242 3.1×	23 0.3×	184 2.9×	23	369
F. Huet France	13	333 1.3×	126 1.0×	74 0.9×	55 0.8×	208 3.3×	37	431
Hideaki Zama Japan	12	109 0.4×	220 1.7×	164 2.1×	22 0.3×	77 1.2×	42	321
M. A. Khan United States	8	139 0.5×	144 1.1×	191 2.4×	19 0.3×	94 1.5×	15	335
A. Khachapuridze Poland	11	138 0.5×	222 1.7×	185 2.3×	48 0.7×	138 2.2×	36	350
D. Dorman United States	8	169 0.7×	239 1.8×	136 1.7×	24 0.4×	137 2.2×	13	361
Kazuhide Sumiyoshi Japan	5	205 0.8×	322 2.5×	72 0.9×	27 0.4×	125 2.0×	10	342
C. Anayama Japan	11	303 1.2×	73 0.6×	71 0.9×	18 0.3×	295 4.7×	25	378

Countries citing papers authored by J. W. Lee

Since Specialization

Citations

This map shows the geographic impact of J. W. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. W. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. W. Lee more than expected).

Fields of papers citing papers by J. W. Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. W. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. W. Lee. The network helps show where J. W. Lee may publish in the future.

Co-authorship network of co-authors of J. W. Lee

This figure shows the co-authorship network connecting the top 25 collaborators of J. W. Lee. A scholar is included among the top collaborators of J. W. Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. W. Lee. J. W. Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Miles, Dale, et al.. (2003). Quantitation of motexafin lutetium in human plasma by liquid chromatography-tandem mass spectrometry and inductively coupled plasma-atomic emission spectroscopy. PubMed. 5(3). 1–16. 18 indexed citations

Hahn, Yoon‐Bong, J. W. Lee, G.A. Vawter, et al.. (1999). Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl2–Ar mixture. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(2). 366–371. 17 indexed citations

Lee, J. W., S. J. Pearton, F. Ren, et al.. (1998). High Density Plasma Damage in InGaP/GaAs and AlGaAs/GaAs High Electron Mobility Transistors. Journal of The Electrochemical Society. 145(11). 4036–4039. 2 indexed citations

Lee, J. W., et al.. (1998). Copper Dry Etching with Cl2 / Ar Plasma Chemistry. Journal of The Electrochemical Society. 145(7). 2585–2589. 30 indexed citations

Lee, J. W., David C. Hays, C. R. Abernathy, et al.. (1997). Inductively Coupled Ar Plasma Damage in AlGaAs. Journal of The Electrochemical Society. 144(9). L245–L247. 9 indexed citations

Shul, R. J., G McClellan, R. D. Briggs, et al.. (1997). High-density plasma etching of compound semiconductors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(3). 633–637. 93 indexed citations

Shul, R. J., C. G. Willison, Jung Han, et al.. (1997). Selective Etching Of Wide Bandgap Nitrides. MRS Proceedings. 483. 4 indexed citations

Vartuli, C. B., S. J. Pearton, J. W. Lee, et al.. (1997). Inductively Coupled Plasma Etching of III‐V Nitrides in CH 4 / H 2 / Ar and CH 4 / H 2 / N 2 Chemistries. Journal of The Electrochemical Society. 144(8). 2844–2847. 18 indexed citations

Lee, J. W., C. R. Abernathy, S. J. Pearton, et al.. (1997). Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes. Journal of The Electrochemical Society. 144(4). 1417–1422. 6 indexed citations

10.

Vartuli, C. B., J. W. Lee, J. D. MacKenzie, et al.. (1997). ICP Dry Etching of III-V Nitrides. MRS Proceedings. 468. 6 indexed citations

11.

Ren, F., J. W. Lee, C. R. Abernathy, et al.. (1997). Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors. Applied Physics Letters. 70(18). 2410–2412. 17 indexed citations

12.

Hong, Jian, J. W. Lee, C. R. Abernathy, et al.. (1997). Comparison of ECR plasma chemistries for etching of InGaP and AlGaP. Journal of Electronic Materials. 26(11). 1303–1309. 3 indexed citations

13.

Shul, R. J., R. D. Briggs, Jung Han, et al.. (1997). Patterning of GaN in High-Density Cl₂- and BCl₃-Based Plasmas. MRS Proceedings. 468. 12 indexed citations

14.

Shul, R. J., R. D. Briggs, S. J. Pearton, et al.. (1996). Chlorine-Based Plasma Etching of GaN. MRS Proceedings. 449. 28 indexed citations

15.

Lee, J. W., E. S. Lambers, C. R. Abernathy, et al.. (1996). Comparison of ICl and IBr Plasma Chemistries for Etching of InGaAlP Alloys. Journal of The Electrochemical Society. 143(11). 3656–3661. 1 indexed citations

16.

Constantine, C., D. Johnson, C. Barratt, et al.. (1996). Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source. MRS Proceedings. 421. 5 indexed citations

17.

Vartuli, C. B., S. J. Pearton, J. W. Lee, et al.. (1996). Wet Chemical Etching of AlN and InAlN in KOH Solutions. Journal of The Electrochemical Society. 143(11). 3681–3684. 39 indexed citations

18.

Pearton, S. J., J. W. Lee, E. S. Lambers, et al.. (1996). Comparison of Dry Etching Techniques for III‐V Semiconductors in CH 4 / H 2 / Ar Plasmas. Journal of The Electrochemical Society. 143(2). 752–758. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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