A. M. Wowchack

421 total citations
10 papers, 366 citations indexed

About

A. M. Wowchack is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, A. M. Wowchack has authored 10 papers receiving a total of 366 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Condensed Matter Physics, 9 papers in Electronic, Optical and Magnetic Materials and 5 papers in Electrical and Electronic Engineering. Recurrent topics in A. M. Wowchack's work include GaN-based semiconductor devices and materials (10 papers), Ga2O3 and related materials (9 papers) and ZnO doping and properties (3 papers). A. M. Wowchack is often cited by papers focused on GaN-based semiconductor devices and materials (10 papers), Ga2O3 and related materials (9 papers) and ZnO doping and properties (3 papers). A. M. Wowchack collaborates with scholars based in United States, Russia and South Korea. A. M. Wowchack's co-authors include S. J. Pearton, P. P. Chow, F. Ren, J. W. Johnson, Albert G. Baca, A. M. Dabiran, C. J. Polley, B. Luo, C. R. Abernathy and K. K. Allums and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In The Last Decade

A. M. Wowchack

10 papers receiving 354 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. M. Wowchack United States	9	332	239	233	110	58	10	366
C. J. Polley United States	11	333 1.0×	213 0.9×	238 1.0×	93 0.8×	79 1.4×	16	376
J. M. Hong Taiwan	9	259 0.8×	206 0.9×	207 0.9×	150 1.4×	48 0.8×	14	349
J. Bernát Germany	12	428 1.3×	210 0.9×	353 1.5×	94 0.9×	74 1.3×	26	445
Y. Otoki Japan	6	277 0.8×	147 0.6×	244 1.0×	79 0.7×	83 1.4×	13	334
M. Akita Japan	9	403 1.2×	172 0.7×	335 1.4×	82 0.7×	79 1.4×	11	424
Masayoshi Kosaki Japan	11	375 1.1×	173 0.7×	233 1.0×	113 1.0×	89 1.5×	28	401
Joseph J. Freedsman Japan	14	442 1.3×	286 1.2×	374 1.6×	124 1.1×	64 1.1×	21	493
S. S. Su China	10	250 0.8×	205 0.9×	250 1.1×	72 0.7×	69 1.2×	25	341
Qilong Bao China	11	423 1.3×	222 0.9×	310 1.3×	104 0.9×	75 1.3×	14	444
G. C. B. Braga United States	8	334 1.0×	186 0.8×	156 0.7×	162 1.5×	88 1.5×	12	355

Countries citing papers authored by A. M. Wowchack

Since Specialization

Citations

This map shows the geographic impact of A. M. Wowchack's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. M. Wowchack with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. M. Wowchack more than expected).

Fields of papers citing papers by A. M. Wowchack

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. M. Wowchack. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. M. Wowchack. The network helps show where A. M. Wowchack may publish in the future.

Co-authorship network of co-authors of A. M. Wowchack

This figure shows the co-authorship network connecting the top 25 collaborators of A. M. Wowchack. A scholar is included among the top collaborators of A. M. Wowchack based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. M. Wowchack. A. M. Wowchack is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

Luo, B., J. W. Johnson, F. Ren, et al.. (2002). High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors. Journal of Electronic Materials. 31(5). 437–441. 48 indexed citations

Pearton, S. J., M. E. Overberg, G. T. Thaler, et al.. (2002). Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 20(3). 721–724. 28 indexed citations

Luo, B., J. W. Johnson, F. Ren, et al.. (2002). Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 80(4). 604–606. 76 indexed citations

Luo, B., J. W. Johnson, C. R. Abernathy, et al.. (2002). Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3. Solid-State Electronics. 46(4). 467–476. 35 indexed citations

Johnson, J. W., Albert G. Baca, R. D. Briggs, et al.. (2001). Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE. Solid-State Electronics. 45(12). 1979–1985. 29 indexed citations

Luo, B., J. W. Johnson, F. Ren, et al.. (2001). dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 79(14). 2196–2198. 102 indexed citations

Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2001). Electronic states in modulation doped p-AlGaN/GaN superlattices. Journal of Applied Physics. 90(8). 4032–4038. 23 indexed citations

Dang, G., B. Luo, X. A. Cao, et al.. (2000). npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions. Solid-State Electronics. 44(12). 2097–2100. 8 indexed citations

Cao, X. A., J. M. Van Hove, Jody J. Klaassen, et al.. (2000). High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors. Solid-State Electronics. 44(4). 649–654. 13 indexed citations

10.

Hickman, R., J. M. Van Hove, P. P. Chow, et al.. (1998). Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy. Solid-State Electronics. 42(12). 2183–2185. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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