Mauro Mosca

1.8k total citations
79 papers, 1.2k citations indexed

About

Mauro Mosca is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Mauro Mosca has authored 79 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 25 papers in Condensed Matter Physics and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Mauro Mosca's work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (19 papers) and ZnO doping and properties (13 papers). Mauro Mosca is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (19 papers) and ZnO doping and properties (13 papers). Mauro Mosca collaborates with scholars based in Italy, Switzerland and France. Mauro Mosca's co-authors include Roberto Macaluso, N. Grandjean, E. Feltin, J.‐F. Carlin, Corrado Calı, R. Butté, M. Ilegems, Monica Santamaria, Francesco Di Franco and Sylvain Nicolay and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Mauro Mosca

75 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mauro Mosca Italy 20 501 395 340 317 244 79 1.2k
Teruo Kanki Japan 23 767 1.5× 381 1.0× 866 2.5× 161 0.5× 959 3.9× 95 1.8k
S. Mohan India 24 1.1k 2.1× 135 0.3× 1.1k 3.3× 226 0.7× 294 1.2× 129 1.9k
Bin He China 18 430 0.9× 181 0.5× 866 2.5× 371 1.2× 386 1.6× 79 1.3k
Frédéric Houzé France 18 465 0.9× 118 0.3× 343 1.0× 365 1.2× 81 0.3× 72 964
Joshua Martin United States 26 895 1.8× 241 0.6× 2.3k 6.7× 268 0.8× 479 2.0× 67 2.6k
L. De Schepper Belgium 18 924 1.8× 102 0.3× 606 1.8× 163 0.5× 138 0.6× 122 1.6k
Ying‐Jay Yang Taiwan 20 759 1.5× 272 0.7× 467 1.4× 274 0.9× 348 1.4× 57 1.2k
Paola Favia Belgium 21 1.2k 2.4× 256 0.6× 515 1.5× 331 1.0× 181 0.7× 120 1.5k
Hyobin Yoo South Korea 21 595 1.2× 440 1.1× 1.1k 3.3× 424 1.3× 380 1.6× 42 1.6k
Th. Gessmann United States 15 814 1.6× 807 2.0× 563 1.7× 533 1.7× 262 1.1× 31 1.5k

Countries citing papers authored by Mauro Mosca

Since Specialization
Citations

This map shows the geographic impact of Mauro Mosca's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mauro Mosca with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mauro Mosca more than expected).

Fields of papers citing papers by Mauro Mosca

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mauro Mosca. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mauro Mosca. The network helps show where Mauro Mosca may publish in the future.

Co-authorship network of co-authors of Mauro Mosca

This figure shows the co-authorship network connecting the top 25 collaborators of Mauro Mosca. A scholar is included among the top collaborators of Mauro Mosca based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mauro Mosca. Mauro Mosca is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Buscarino, Gianpiero, Mauro Mosca, Dominique Persano Adorno, et al.. (2024). Room-temperature tuning of mid-infrared optical phonons and plasmons in W-doped VO2 thin films. Optical Materials. 154. 115732–115732. 7 indexed citations
2.
Mosca, Mauro, R. Rani, Estelle Wagner, et al.. (2024). HfO₂ Thin Films by Chemical Beam Vapor Deposition for Large Resistive Switching Memristors. IEEE Journal of the Electron Devices Society. 12. 508–515. 2 indexed citations
3.
Crupi, I., et al.. (2024). Investigation on Process Time to Fabricate Carbon Dot-based Electroluminescent Devices. Nova Science Publishers (Nova Science Publishers, Inc.). 1–5.
4.
Larciprete, Maria Cristina, Mauro Mosca, Dominique Persano Adorno, et al.. (2023). Tunable IR perfect absorbers enabled by tungsten doped VO2 thin films. APL Materials. 11(9). 15 indexed citations
5.
Polyakov, A. Y., Camille Haller, R. Butté, et al.. (2020). Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer. Journal of Physics D Applied Physics. 53(44). 445111–445111. 4 indexed citations
6.
Piva, Francesco, Carlo De Santi, Camille Haller, et al.. (2020). Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy. Journal of Physics D Applied Physics. 54(2). 25108–25108. 19 indexed citations
7.
Cesca, Tiziana, Carlo Scian, Emilija Petronijevic, et al.. (2019). Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire. Nanoscale. 12(2). 851–863. 49 indexed citations
8.
Polyakov, A. Y., Camille Haller, N. B. Smirnov, et al.. (2019). Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes. Journal of Applied Physics. 126(12). 21 indexed citations
9.
Haller, Camille, J.‐F. Carlin, Mauro Mosca, et al.. (2019). InAlN underlayer for near ultraviolet InGaN based light emitting diodes. Applied Physics Express. 12(3). 34002–34002. 37 indexed citations
10.
Mosca, Mauro, et al.. (2018). Low-temperature growth of n ++ -GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes. Semiconductor Science and Technology. 34(1). 15002–15002. 9 indexed citations
11.
Biasi, Valeria, et al.. (2017). I colloqui di orientamento per facilitare il successo accademico: una indagine sperimentale. Journal of Educational Cultural and Psychological Studies (ECPS Journal). 1(15). 10 indexed citations
12.
Mosca, Mauro, et al.. (2015). Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes. Journal of Electronic Materials. 45(1). 682–687. 9 indexed citations
13.
Macaluso, Roberto, Mauro Mosca, Antonio D’Angelo, et al.. (2014). Resistive switching behaviour in ZnO and VO 2 memristors grown by pulsed laser deposition. Electronics Letters. 50(4). 262–263. 37 indexed citations
14.
Macaluso, Roberto, et al.. (2013). Hybrid LEDs pave way to new lighting applications. 47. 60–64. 5 indexed citations
15.
Mosca, Mauro, et al.. (2013). Warm white LED light by frequency down-conversion of mixed yellow and red Lumogen. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8767. 87670L–87670L. 11 indexed citations
16.
Julien, F. H., S. Golka, G. Pozzovivo, et al.. (2008). Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy. IEEE Photonics Technology Letters. 20(2). 102–104. 23 indexed citations
17.
Duboz, Jean‐Yves, N. Grandjean, A. Dussaigne, et al.. (2006). Solar blind AlGaN photodetectors with a very high spectral selectivity. The European Physical Journal Applied Physics. 33(1). 5–7. 5 indexed citations
18.
Nicolay, Sylvain, E. Feltin, J.‐F. Carlin, et al.. (2006). Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions. Applied Physics Letters. 88(15). 44 indexed citations
19.
Calı, Corrado, et al.. (1998). Deposition of indium tin oxide films by laser ablation: Processing and characterization. Solid-State Electronics. 42(5). 877–879. 18 indexed citations
20.
Bièvre, Paul De, S. Valkiers, Philip Taylor, et al.. (1996). The molar volume of silicon. SUPL30–SUPL30. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Teruo Kanki Breakdown of academic impact, for papers by S. Mohan Breakdown of academic impact, for papers by Bin He Breakdown of academic impact, for papers by Frédéric Houzé Breakdown of academic impact, for papers by Joshua Martin Breakdown of academic impact, for papers by L. De Schepper Breakdown of academic impact, for papers by Ying‐Jay Yang Breakdown of academic impact, for papers by Paola Favia Breakdown of academic impact, for papers by Hyobin Yoo Breakdown of academic impact, for papers by Th. Gessmann
Rankless by CCL
2026