А. I. Kochkova

1.1k citations

50 papers · 934 indexed · h-index 17

Co-authors: S. J. Pearton A. Y. Polyakov Ivan Shchemerov А. В. Черных E. B. Yakimov N. B. Smirnov A.A. Vasil'ev F. Ren
Topics: Ga2O3 and related materials (48 papers)ZnO doping and properties (43 papers)Advanced Photocatalysis Techniques (39 papers)
Cited by: Electronic, Optical and Magnetic Materials Renewable Energy, Sustainability and the Environment Materials Chemistry
Journals: Applied Physics Letters Journal of Applied Physics Scientific Reports
Partner nations: Russia United States South Korea

In The Last Decade

А. I. Kochkova

46 papers receiving 903 citations

Peers

Countries citing papers authored by А. I. Kochkova

Since Specialization

Citations

This map shows the geographic impact of А. I. Kochkova's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by А. I. Kochkova with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites А. I. Kochkova more than expected).

Fields of papers citing papers by А. I. Kochkova

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by А. I. Kochkova. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by А. I. Kochkova. The network helps show where А. I. Kochkova may publish in the future.

Co-authorship network of co-authors of А. I. Kochkova

This figure shows the co-authorship network connecting the top 25 collaborators of А. I. Kochkova. A scholar is included among the top collaborators of А. I. Kochkova based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with А. I. Kochkova. А. I. Kochkova is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Role of surface treatments and localized surface plasmon nanoparticles on internal quantum efficiency of 800 nm diameter blue GaN/InGaN nano light emitting diodes 2024 ·Journal of Alloys and Compounds ·In‐Hwan Lee,(unknown),(unknown),(unknown),A.A. Vasil'ev,(unknown),(unknown),А. I. Kochkova,A. Y. Polyakov,S. J. Pearton	2
2	Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga₂O₃: effects of carrier trapping with deep centers 2024 ·Journal of Physics D Applied Physics ·A. Y. Polyakov,E. B. Yakimov,Ivan Shchemerov,A.A. Vasil'ev,А. I. Kochkova,В. И. Николаев,S. J. Pearton	11
3	Properties of κ‐Ga₂O₃ Prepared by Epitaxial Lateral Overgrowth 2023 ·Advanced Materials Interfaces ·A. Y. Polyakov,In‐Hwan Lee,В. И. Николаев,(unknown),Andrey Miakonkikh,M. P. Scheglov,E. B. Yakimov,(unknown),A.A. Vasil'ev,А. I. Kochkova,Ivan Shchemerov,А. В. Черных,S. J. Pearton	8
4	Mechanism for Long Photocurrent Time Constants in α-Ga₂O₃ UV Photodetectors 2023 ·ECS Journal of Solid State Science and Technology ·A. Y. Polyakov,А. V. Аlmaev,В. И. Николаев,А. И. Печников,(unknown),A.A. Vasil'ev,E. B. Yakimov,А. I. Kochkova,(unknown),(unknown),S. J. Pearton	11
5	Carrier removal rates in 1.1 MeV proton irradiated α-Ga₂O₃ (Sn) 2023 ·Journal of Physics D Applied Physics ·(unknown),В. И. Николаев,А. И. Печников,П. Б. Лагов,Ivan Shchemerov,A.A. Vasil'ev,А. В. Черных,А. I. Kochkova,(unknown),Yu. S. Pavlov,Т. V. Kulevoy,A. S. Doroshkevich,(unknown),(unknown),S. J. Pearton	10
6	Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3 2023 ·Journal of Alloys and Compounds ·A. Y. Polyakov,A.A. Vasil'ev,Ivan Shchemerov,А. В. Черных,(unknown),(unknown),А. I. Kochkova,П. Б. Лагов,Andrey Miakonkikh,Yu. S. Pavlov,(unknown),In‐Hwan Lee,Andrej Kuznetsov,S. J. Pearton	8
7	Transport and trap states in proton irradiated ultra-thick κ-Ga2O3 2023 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·A. Y. Polyakov,В. И. Николаев,А. И. Печников,E. B. Yakimov,П. Б. Лагов,Ivan Shchemerov,A.A. Vasil'ev,А. I. Kochkova,А. В. Черных,In‐Hwan Lee,S. J. Pearton	9
8	Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs 2023 ·Crystals ·A. Y. Polyakov,E. B. Yakimov,В. И. Николаев,А. И. Печников,Andrey Miakonkikh,Alexander Azarov,In‐Hwan Lee,A.A. Vasil'ev,А. I. Kochkova,Ivan Shchemerov,Andrej Kuznetsov,S. J. Pearton	13
9	Electrical and Structural Properties of Two-Inch Diameter (0001) α -Ga ₂ O ₃ Films Doped with Sn and Grown by Halide Epitaxy 2022 ·ECS Journal of Solid State Science and Technology ·В. И. Николаев,A. Y. Polyakov,С. И. Степанов,А. И. Печников,E. B. Yakimov,А. В. Черных,A.A. Vasil'ev,Ivan Shchemerov,А. I. Kochkova,(unknown),(unknown),S. J. Pearton	4
10	Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates 2022 ·APL Materials ·A. Y. Polyakov,В. И. Николаев,А. И. Печников,С. И. Степанов,E. B. Yakimov,M. P. Scheglov,Ivan Shchemerov,A.A. Vasil'ev,А. I. Kochkova,А. В. Черных,A. V. Chikiryaka,S. J. Pearton	25
11	Parasitic p–n junctions formed at V-pit defects in p-GaN 2021 ·Journal of Applied Physics ·П. С. Вергелес,E. B. Yakimov,A. Y. Polyakov,Ivan Shchemerov,А. В. Черных,A.A. Vasil'ev,А. I. Kochkova,In‐Hwan Lee,S. J. Pearton	2
12	Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates 2021 ·Journal of Applied Physics ·A. Y. Polyakov,В. И. Николаев,С. А. Тарелкин,А. И. Печников,(unknown),A. E. Nikolaev,Ivan Shchemerov,E. B. Yakimov,(unknown),М. С. Кузнецов,A.A. Vasil'ev,А. I. Kochkova,(unknown),M. P. Scheglov,Jihyun Kim,S. J. Pearton	23
13	1 GeV proton damage in β-Ga2O3 2021 ·Journal of Applied Physics ·A. Y. Polyakov,Ivan Shchemerov,A.A. Vasil'ev,А. I. Kochkova,N. B. Smirnov,А. В. Черных,E. B. Yakimov,П. Б. Лагов,Yu. S. Pavlov,(unknown),(unknown),(unknown),(unknown),Minghan Xian,F. Ren,Jihyun Kim,S. J. Pearton	12
14	Defect States Determining Dynamic Trapping-Detrapping in β-Ga₂O₃ Field-Effect Transistors 2019 ·ECS Journal of Solid State Science and Technology ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,(unknown),Sooyeoun Oh,S. J. Pearton,F. Ren,А. I. Kochkova,Jihyun Kim	33
15	Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions 2019 ·Journal of Applied Physics ·A. Y. Polyakov,(unknown),I. Shchemerov,А. В. Черных,E. B. Yakimov,А. I. Kochkova,Jiancheng Yang,Chaker Fares,F. Ren,S. J. Pearton	3
16	Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga₂O₃ (Mg) 2019 ·ECS Journal of Solid State Science and Technology ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,E. B. Yakimov,S. J. Pearton,F. Ren,А. В. Черных,D. Gogova,А. I. Kochkova	47
17	Defects at the surface of β-Ga2O3 produced by Ar plasma exposure 2019 ·APL Materials ·A. Y. Polyakov,In‐Hwan Lee,N. B. Smirnov,E. B. Yakimov,Ivan Shchemerov,А. В. Черных,А. I. Kochkova,A.A. Vasil'ev,Patrick H. Carey,F. Ren,David J. Smith,S. J. Pearton	50
18	Hydrogen plasma treatment of β -Ga2O3: Changes in electrical properties and deep trap spectra 2019 ·Applied Physics Letters ·A. Y. Polyakov,In‐Hwan Lee,N. B. Smirnov,E. B. Yakimov,Ivan Shchemerov,А. В. Черных,А. I. Kochkova,A.A. Vasil'ev,F. Ren,Patrick H. Carey,S. J. Pearton	49
19	Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire 2019 ·APL Materials ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,E. B. Yakimov,В. И. Николаев,С. И. Степанов,А. И. Печников,А. В. Черных,К. Д. Щербачев,(unknown),А. I. Kochkova,A.A. Vasil'ev,S. J. Pearton	45
20	Electrical properties of bulk semi-insulating β-Ga2O3 (Fe) 2018 ·Applied Physics Letters ·A. Y. Polyakov,(unknown),Ivan Shchemerov,S. J. Pearton,F. Ren,А. В. Черных,А. I. Kochkova	88

About А. I. Kochkova

А. I. Kochkova is a scholar working on Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment and Materials Chemistry, having authored 50 papers that have together received 934 indexed citations. Recurring topics across this work include Ga2O3 and related materials (48 papers), ZnO doping and properties (43 papers) and Advanced Photocatalysis Techniques (39 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (897 citations), Renewable Energy, Sustainability and the Environment (594 citations) and Materials Chemistry (852 citations). А. I. Kochkova has collaborated with scholars based in Russia, United States and South Korea. Frequent co-authors include S. J. Pearton, A. Y. Polyakov, Ivan Shchemerov, А. В. Черных, E. B. Yakimov, N. B. Smirnov, A.A. Vasil'ev, F. Ren, In‐Hwan Lee and В. И. Николаев. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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