Jiancheng Yang

5.3k total citations · 1 hit paper
39 papers, 4.5k citations indexed

About

Jiancheng Yang is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Renewable Energy, Sustainability and the Environment. According to data from OpenAlex, Jiancheng Yang has authored 39 papers receiving a total of 4.5k indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electronic, Optical and Magnetic Materials, 37 papers in Materials Chemistry and 25 papers in Renewable Energy, Sustainability and the Environment. Recurrent topics in Jiancheng Yang's work include Ga2O3 and related materials (38 papers), ZnO doping and properties (37 papers) and Advanced Photocatalysis Techniques (25 papers). Jiancheng Yang is often cited by papers focused on Ga2O3 and related materials (38 papers), ZnO doping and properties (37 papers) and Advanced Photocatalysis Techniques (25 papers). Jiancheng Yang collaborates with scholars based in United States, South Korea and Taiwan. Jiancheng Yang's co-authors include F. Ren, S. J. Pearton, Jihyun Kim, Marko J. Tadjer, Michael A. Mastro, Akito Kuramata, Soohwan Jang, Shihyun Ahn, Chaker Fares and A. Y. Polyakov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Small.

In The Last Decade

Jiancheng Yang

38 papers receiving 4.3k citations

Hit Papers

A review of Ga2O3 materials, processing, and devices 2018 2026 2020 2023 2018 500 1000 1.5k 2.0k
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. A review of Ga2O3 materials, processing, and devices
    2018 2.3k citations S. J. Pearton, Jiancheng Yang et al. Applied Physics Reviews profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jiancheng Yang United States 27 4.3k 4.1k 2.2k 877 348 39 4.5k
Takekazu Masui Japan 26 7.4k 1.7× 7.2k 1.7× 3.8k 1.7× 1.3k 1.5× 604 1.7× 37 7.6k
Mike Pietsch Germany 20 2.4k 0.5× 2.5k 0.6× 1.2k 0.5× 642 0.7× 195 0.6× 32 2.7k
Robert Schewski Germany 27 2.8k 0.7× 2.9k 0.7× 1.7k 0.7× 588 0.7× 143 0.4× 42 3.0k
Wenxiang Mu China 27 1.8k 0.4× 1.8k 0.4× 931 0.4× 705 0.8× 153 0.4× 100 2.2k
Shinji Nakagomi Japan 20 1.8k 0.4× 1.9k 0.5× 987 0.4× 695 0.8× 178 0.5× 62 2.2k
Ivan Shchemerov Russia 24 1.5k 0.3× 1.4k 0.3× 891 0.4× 460 0.5× 265 0.8× 74 1.7k
Hiroyuki Nishinaka Japan 26 1.5k 0.3× 2.0k 0.5× 755 0.3× 1.0k 1.1× 131 0.4× 88 2.3k
Gregg H. Jessen United States 28 2.7k 0.6× 2.7k 0.7× 1.0k 0.5× 1.5k 1.7× 1.2k 3.3× 73 3.8k
Yves Dumont France 25 1.0k 0.2× 1.5k 0.4× 352 0.2× 617 0.7× 157 0.5× 84 1.7k
Emilio Nogales Spain 21 966 0.2× 1.1k 0.3× 432 0.2× 449 0.5× 379 1.1× 87 1.4k

Countries citing papers authored by Jiancheng Yang

Since Specialization
Citations

This map shows the geographic impact of Jiancheng Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jiancheng Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jiancheng Yang more than expected).

Fields of papers citing papers by Jiancheng Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jiancheng Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jiancheng Yang. The network helps show where Jiancheng Yang may publish in the future.

Co-authorship network of co-authors of Jiancheng Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Jiancheng Yang. A scholar is included among the top collaborators of Jiancheng Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jiancheng Yang. Jiancheng Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Yang, Jiancheng, Chaker Fares, F. Ren, et al.. (2019). Switching Behavior and Forward Bias Degradation of 700V, 0.2A, β-Ga2O3Vertical Geometry Rectifiers. ECS Journal of Solid State Science and Technology. 8(7). Q3028–Q3033. 26 indexed citations
3.
Polyakov, A. Y., I. Shchemerov, А. В. Черных, et al.. (2019). Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions. Journal of Applied Physics. 125(9). 3 indexed citations
4.
Modak, Sushrut, Jonathan Lee, Leonid Chernyak, et al.. (2019). Electron injection-induced effects in Si-doped β-Ga2O3. AIP Advances. 9(1). 20 indexed citations
5.
Yang, Jiancheng, Minghan Xian, Patrick H. Carey, et al.. (2019). Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays. Applied Physics Letters. 114(23). 52 indexed citations
6.
Modak, Sushrut, Leonid Chernyak, Igor Lubomirsky, et al.. (2019). Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga2O3 Schottky Rectifiers. ECS Journal of Solid State Science and Technology. 8(7). Q3050–Q3053. 17 indexed citations
7.
Chen, Yen‐Ting, Jiancheng Yang, F. Ren, et al.. (2019). Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes. ECS Journal of Solid State Science and Technology. 8(7). Q3229–Q3234. 24 indexed citations
8.
Yang, Jiancheng, Chaker Fares, F. Ren, et al.. (2019). 60Co Gamma Ray Damage in Homoepitaxial β-Ga2O3Schottky Rectifiers. ECS Journal of Solid State Science and Technology. 8(7). Q3041–Q3045. 23 indexed citations
9.
Carey, Patrick H., Jiancheng Yang, F. Ren, et al.. (2019). Comparison of Dual-Stack Dielectric Field Plates on β-Ga2O3 Schottky Rectifiers. ECS Journal of Solid State Science and Technology. 8(7). Q3221–Q3225. 41 indexed citations
10.
Sharma, Ribhu, Erin Patrick, Mark E. Law, et al.. (2019). Thermal Simulations of High Current β-Ga2O3 Schottky Rectifiers. ECS Journal of Solid State Science and Technology. 8(7). Q3195–Q3201. 36 indexed citations
11.
Yang, Jiancheng, Chaker Fares, Minghan Xian, et al.. (2019). Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers. ECS Journal of Solid State Science and Technology. 8(7). Q3159–Q3164. 53 indexed citations
12.
Raad, Peter E., Pavel L. Komarov, Marko J. Tadjer, et al.. (2019). Thermoreflectance Temperature Mapping of Ga2O3 Schottky Barrier Diodes. ECS Transactions. 89(5). 3–7. 5 indexed citations
13.
Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2018). Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3. Applied Physics Letters. 113(9). 91 indexed citations
14.
Pearton, S. J., Jiancheng Yang, F. Ren, et al.. (2018). A review of Ga2O3 materials, processing, and devices. Applied Physics Reviews. 5(1). 2335 indexed citations breakdown →
15.
Yang, Jiancheng, F. Ren, Marko J. Tadjer, S. J. Pearton, & Akito Kuramata. (2018). Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit. AIP Advances. 8(5). 75 indexed citations
16.
Yakimov, E. B., A. Y. Polyakov, N. B. Smirnov, et al.. (2018). Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current. Journal of Applied Physics. 123(18). 62 indexed citations
17.
Yang, Jiancheng, F. Ren, Marko J. Tadjer, S. J. Pearton, & Akito Kuramata. (2018). 2300V Reverse Breakdown Voltage Ga2O3Schottky Rectifiers. ECS Journal of Solid State Science and Technology. 7(5). Q92–Q96. 181 indexed citations
18.
Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2018). Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage. Applied Physics Letters. 112(3). 125 indexed citations
19.
Kim, Jihyun, S. J. Pearton, Chaker Fares, et al.. (2018). Radiation damage effects in Ga2O3 materials and devices. Journal of Materials Chemistry C. 7(1). 10–24. 220 indexed citations
20.
Yang, Jiancheng, Shihyun Ahn, F. Ren, et al.. (2017). High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers. IEEE Electron Device Letters. 38(7). 906–909. 192 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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