A.A. Vasil'ev

1.0k total citations
75 papers, 831 citations indexed

About

A.A. Vasil'ev is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Renewable Energy, Sustainability and the Environment. According to data from OpenAlex, A.A. Vasil'ev has authored 75 papers receiving a total of 831 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electronic, Optical and Magnetic Materials, 47 papers in Materials Chemistry and 37 papers in Renewable Energy, Sustainability and the Environment. Recurrent topics in A.A. Vasil'ev's work include Ga2O3 and related materials (47 papers), ZnO doping and properties (42 papers) and Advanced Photocatalysis Techniques (37 papers). A.A. Vasil'ev is often cited by papers focused on Ga2O3 and related materials (47 papers), ZnO doping and properties (42 papers) and Advanced Photocatalysis Techniques (37 papers). A.A. Vasil'ev collaborates with scholars based in Russia, United States and South Korea. A.A. Vasil'ev's co-authors include A. Y. Polyakov, S. J. Pearton, Ivan Shchemerov, А. В. Черных, E. B. Yakimov, А. I. Kochkova, N. B. Smirnov, In‐Hwan Lee, F. Ren and В. И. Николаев and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A.A. Vasil'ev

65 papers receiving 796 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A.A. Vasil'ev Russia 16 720 683 462 198 63 75 831
Takafumi Kamimura Japan 13 1.0k 1.4× 1.1k 1.7× 455 1.0× 276 1.4× 105 1.7× 38 1.3k
А. В. Черных Russia 19 940 1.3× 918 1.3× 608 1.3× 227 1.1× 85 1.3× 64 1.1k
Daivasigamani Krishnamurthy Japan 8 874 1.2× 865 1.3× 384 0.8× 222 1.1× 127 2.0× 24 954
Giang T. Dang Japan 14 525 0.7× 601 0.9× 260 0.6× 267 1.3× 50 0.8× 35 694
Florian Schmidt Germany 12 413 0.6× 549 0.8× 117 0.3× 248 1.3× 83 1.3× 35 641
Ymir Kalmann Frodason Norway 15 535 0.7× 620 0.9× 266 0.6× 278 1.4× 28 0.4× 35 736
Jiaying Shen China 10 413 0.6× 481 0.7× 186 0.4× 211 1.1× 45 0.7× 22 595
Jingzhi Yin China 14 239 0.3× 486 0.7× 112 0.2× 309 1.6× 64 1.0× 49 577
П. Б. Лагов Russia 12 369 0.5× 340 0.5× 200 0.4× 132 0.7× 108 1.7× 34 474
Mario Brützam Germany 9 445 0.6× 502 0.7× 210 0.5× 159 0.8× 43 0.7× 12 566

Countries citing papers authored by A.A. Vasil'ev

Since Specialization
Citations

This map shows the geographic impact of A.A. Vasil'ev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.A. Vasil'ev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.A. Vasil'ev more than expected).

Fields of papers citing papers by A.A. Vasil'ev

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.A. Vasil'ev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.A. Vasil'ev. The network helps show where A.A. Vasil'ev may publish in the future.

Co-authorship network of co-authors of A.A. Vasil'ev

This figure shows the co-authorship network connecting the top 25 collaborators of A.A. Vasil'ev. A scholar is included among the top collaborators of A.A. Vasil'ev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.A. Vasil'ev. A.A. Vasil'ev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yakimov, E. B., A. Y. Polyakov, A.A. Vasil'ev, et al.. (2025). Depth-resolved cathodoluminescence in γ/β-Ga2O3 polymorph junctions. APL Materials. 13(4). 1 indexed citations
2.
Luchnikov, Lev, A.A. Vasil'ev, С. С. Козлов, et al.. (2024). Double-side integration of the fluorinated self-assembling monolayers for enhanced stability of inverted perovskite solar cells. Materials Today Energy. 47. 101741–101741. 1 indexed citations
3.
4.
Boldyreva, Aleksandra G., et al.. (2024). Effect of gamma-rays on recombination dynamics and defect concentration in a wide bandgap perovskite. SHILAP Revista de lepidopterología. 5(4). 1–1. 2 indexed citations
5.
Polyakov, A. Y., E. B. Yakimov, Ivan Shchemerov, et al.. (2024). Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga2O3: effects of carrier trapping with deep centers. Journal of Physics D Applied Physics. 58(6). 63002–63002. 11 indexed citations
6.
Polyakov, A. Y., In‐Hwan Lee, В. И. Николаев, et al.. (2023). Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth. Advanced Materials Interfaces. 12(2). 8 indexed citations
7.
Polyakov, A. Y., А. V. Аlmaev, В. И. Николаев, et al.. (2023). Mechanism for Long Photocurrent Time Constants in α-Ga2O3 UV Photodetectors. ECS Journal of Solid State Science and Technology. 12(4). 45002–45002. 11 indexed citations
8.
Николаев, В. И., А. И. Печников, П. Б. Лагов, et al.. (2023). Carrier removal rates in 1.1 MeV proton irradiated α-Ga2O3 (Sn). Journal of Physics D Applied Physics. 56(30). 305103–305103. 10 indexed citations
9.
Polyakov, A. Y., A.A. Vasil'ev, Ivan Shchemerov, et al.. (2023). Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3. Journal of Alloys and Compounds. 945. 169258–169258. 8 indexed citations
10.
Polyakov, A. Y., В. И. Николаев, А. И. Печников, et al.. (2023). Transport and trap states in proton irradiated ultra-thick κ-Ga2O3. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(3). 9 indexed citations
11.
Polyakov, A. Y., E. B. Yakimov, В. И. Николаев, et al.. (2023). Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs. Crystals. 13(9). 1400–1400. 13 indexed citations
12.
Николаев, В. И., A. Y. Polyakov, С. И. Степанов, et al.. (2022). Electrical and Structural Properties of Two-Inch Diameter (0001) α -Ga 2 O 3 Films Doped with Sn and Grown by Halide Epitaxy. ECS Journal of Solid State Science and Technology. 11(11). 115002–115002. 4 indexed citations
13.
Polyakov, A. Y., В. И. Николаев, И. Н. Мешков, et al.. (2022). Point defect creation by proton and carbon irradiation of α-Ga2O3. Journal of Applied Physics. 132(3). 18 indexed citations
14.
Polyakov, A. Y., В. И. Николаев, А. И. Печников, et al.. (2022). Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates. APL Materials. 10(6). 25 indexed citations
15.
Yakimov, E. B., A. Y. Polyakov, Ivan Shchemerov, et al.. (2021). Experimental estimation of electron–hole pair creation energy in β -Ga2O3. Applied Physics Letters. 118(20). 45 indexed citations
16.
Вергелес, П. С., E. B. Yakimov, A. Y. Polyakov, et al.. (2021). Parasitic p–n junctions formed at V-pit defects in p-GaN. Journal of Applied Physics. 129(15). 2 indexed citations
17.
Yakimov, E. B., A. Y. Polyakov, Ivan Shchemerov, et al.. (2020). Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation. APL Materials. 8(11). 45 indexed citations
18.
Polyakov, A. Y., In‐Hwan Lee, N. B. Smirnov, et al.. (2019). Defects at the surface of β-Ga2O3 produced by Ar plasma exposure. APL Materials. 7(6). 50 indexed citations
19.
Polyakov, A. Y., In‐Hwan Lee, N. B. Smirnov, et al.. (2019). Hydrogen plasma treatment of β -Ga2O3: Changes in electrical properties and deep trap spectra. Applied Physics Letters. 115(3). 49 indexed citations
20.
Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2019). Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire. APL Materials. 7(5). 45 indexed citations

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