F. Pellizzer

3.7k total citations · 1 hit paper
56 papers, 2.8k citations indexed

About

F. Pellizzer is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, F. Pellizzer has authored 56 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 48 papers in Materials Chemistry and 24 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in F. Pellizzer's work include Phase-change materials and chalcogenides (46 papers), Advanced Memory and Neural Computing (23 papers) and Chalcogenide Semiconductor Thin Films (22 papers). F. Pellizzer is often cited by papers focused on Phase-change materials and chalcogenides (46 papers), Advanced Memory and Neural Computing (23 papers) and Chalcogenide Semiconductor Thin Films (22 papers). F. Pellizzer collaborates with scholars based in Italy, United States and Switzerland. F. Pellizzer's co-authors include A. Pirovano, R. Bez, Andrea L. Lacaita, A. Benvenuti, Daniele Ielmini, Andrea Redaelli, S. A. Kostylev, M. Tosi, F. Ottogalli and S. J. Hudgens and has published in prestigious journals such as Nature Communications, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

F. Pellizzer

54 papers receiving 2.6k citations

Hit Papers

Electronic Switching in Phase-Change Memories 2004 2026 2011 2018 2004 100 200 300 400 500
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Electronic Switching in Phase-Change Memories
    2004 502 citations A. Pirovano, Andrea L. Lacaita et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Pellizzer Italy 22 2.3k 2.2k 641 557 298 56 2.8k
A. Pirovano Italy 26 2.6k 1.1× 2.5k 1.1× 718 1.1× 631 1.1× 165 0.6× 67 3.1k
R. Bez Italy 25 3.1k 1.3× 2.2k 1.0× 604 0.9× 520 0.9× 325 1.1× 78 3.8k
John P. Reifenberg United States 13 1.5k 0.7× 1.3k 0.6× 245 0.4× 444 0.8× 212 0.7× 22 2.0k
C. Lam United States 26 2.4k 1.0× 1.6k 0.7× 281 0.4× 497 0.9× 542 1.8× 70 2.9k
Daniel Krebs Germany 20 1.4k 0.6× 1.2k 0.6× 217 0.3× 406 0.7× 350 1.2× 40 2.0k
Andrea Redaelli Italy 23 1.5k 0.7× 1.5k 0.7× 372 0.6× 427 0.8× 92 0.3× 69 1.8k
A. Benvenuti Italy 18 1.5k 0.7× 1.3k 0.6× 372 0.6× 346 0.6× 58 0.2× 48 1.9k
H.L. Lung Taiwan 19 1.3k 0.6× 967 0.4× 180 0.3× 297 0.5× 381 1.3× 60 1.7k
M. Breitwisch United States 20 1.4k 0.6× 886 0.4× 201 0.3× 252 0.5× 454 1.5× 43 1.9k
Andrea Padovani Italy 31 4.1k 1.8× 1.4k 0.6× 113 0.2× 276 0.5× 56 0.2× 172 4.3k

Countries citing papers authored by F. Pellizzer

Since Specialization
Citations

This map shows the geographic impact of F. Pellizzer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Pellizzer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Pellizzer more than expected).

Fields of papers citing papers by F. Pellizzer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Pellizzer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Pellizzer. The network helps show where F. Pellizzer may publish in the future.

Co-authorship network of co-authors of F. Pellizzer

This figure shows the co-authorship network connecting the top 25 collaborators of F. Pellizzer. A scholar is included among the top collaborators of F. Pellizzer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Pellizzer. F. Pellizzer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fantini, Paolo, E. Varesi, Agostino Pirovano, et al.. (2026). Microscopic model of the operation of the single-chalcogenide X-point memory. Communications Materials. 7(1).
2.
Persch, Christoph, Julian Pries, Shuai Wei, et al.. (2021). The potential of chemical bonding to design crystallization and vitrification kinetics. Nature Communications. 12(1). 4978–4978. 47 indexed citations
3.
Boniardi, Mattia, Andrea Redaelli, F. Pellizzer, et al.. (2014). Optimization metrics for Phase Change Memory (PCM) cell architectures. 29.1.1–29.1.4. 44 indexed citations
4.
Pellizzer, F. & Roberto Bez. (2012). “Phase-Change Memories for nano-scale technology and design”. 1–4. 5 indexed citations
5.
Gerardin, Simone, Marta Bagatin, A. Paccagnella, et al.. (2011). Single Event Effects in 90-nm Phase Change Memories. IEEE Transactions on Nuclear Science. 58(6). 2755–2760. 15 indexed citations
6.
Resta, Claudio, Meenatchi Jagasivamani, F. Pellizzer, et al.. (2009). A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage. IEEE Journal of Solid-State Circuits. 44(1). 217–227. 228 indexed citations
7.
Annunziata, R., P. Zuliani, Massimo Borghi, et al.. (2009). Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond. 1–4. 50 indexed citations
8.
Boniardi, Mattia, Andrea Redaelli, A. Pirovano, et al.. (2009). A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5. Journal of Applied Physics. 105(8). 69 indexed citations
9.
Fantini, Paolo, Giovanni Betti Beneventi, Alessandro Calderoni, et al.. (2008). Characterization and modelling of low-frequency noise in PCM devices. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–4. 18 indexed citations
10.
Pirovano, A., F. Pellizzer, I. Tortorelli, et al.. (2008). Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond. Solid-State Electronics. 52(9). 1467–1472. 17 indexed citations
11.
Paccagnella, A., et al.. (2008). Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors. IEEE Transactions on Nuclear Science. 55(6). 3189–3196. 7 indexed citations
12.
Fantini, Paolo, et al.. (2007). A Phase Change Memory Compact Model for Multilevel Applications. IEEE Electron Device Letters. 28(11). 973–975. 55 indexed citations
13.
Pellizzer, F., A. Benvenuti, Bob Johnson, et al.. (2006). A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications. 122–123. 87 indexed citations
14.
Ielmini, Daniele, D. Mantegazza, Andrea L. Lacaita, A. Pirovano, & F. Pellizzer. (2005). Parasitic reset in the programming transient of PCMs. IEEE Electron Device Letters. 26(11). 799–801. 56 indexed citations
15.
Pellizzer, F., et al.. (2004). Analysis of plasma damage on phase change memory cells. 227–230. 1 indexed citations
16.
Pirovano, A., Andrea L. Lacaita, A. Benvenuti, F. Pellizzer, & R. Bez. (2004). Electronic Switching in Phase-Change Memories. IEEE Transactions on Electron Devices. 51(3). 452–459. 502 indexed citations breakdown →
17.
Bedeschi, F., Claudio Resta, O. Khouri, et al.. (2004). An 8Mb demonstrator for high-density 1.8V Phase-Change Memories. 442–445. 70 indexed citations
18.
Ghidini, G., et al.. (2003). Charge trapping mechanism under dynamic stress and its effect on failure time [gate oxides]. 88–92. 13 indexed citations
19.
Larcher, Luca, Paolo Pavan, F. Pellizzer, & G. Ghidini. (2001). A new model of gate capacitance as a simple tool to extract MOS parameters. IEEE Transactions on Electron Devices. 48(5). 935–945. 21 indexed citations
20.
Ghidini, G., et al.. (1997). Electrical Characterization of Highly Reliable 8 nm Oxide. Journal of The Electrochemical Society. 144(2). 758–764. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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