Yu. Melnik

647 total citations
34 papers, 531 citations indexed

About

Yu. Melnik is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yu. Melnik has authored 34 papers receiving a total of 531 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Condensed Matter Physics, 22 papers in Electrical and Electronic Engineering and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yu. Melnik's work include GaN-based semiconductor devices and materials (33 papers), Silicon Carbide Semiconductor Technologies (15 papers) and Ga2O3 and related materials (14 papers). Yu. Melnik is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), Silicon Carbide Semiconductor Technologies (15 papers) and Ga2O3 and related materials (14 papers). Yu. Melnik collaborates with scholars based in United States, Russia and United Kingdom. Yu. Melnik's co-authors include V. Dmitriev, A. E. Nikolaev, И.П. Никитина, Konstantin Vassilevski, N.I. Kuznetsov, A. S. Zubrilov, H. P. Strunk, M. Albrecht, H. Temkin and N. N. Faleev and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

In The Last Decade

Yu. Melnik

32 papers receiving 507 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yu. Melnik United States 16 502 250 234 212 125 34 531
A. S. Zubrilov Russia 15 495 1.0× 229 0.9× 349 1.5× 243 1.1× 70 0.6× 58 654
P. Cantu United States 9 499 1.0× 241 1.0× 198 0.8× 187 0.9× 224 1.8× 10 536
M. Némoz France 14 513 1.0× 292 1.2× 224 1.0× 274 1.3× 170 1.4× 46 651
C. Giesen Germany 14 436 0.9× 212 0.8× 251 1.1× 228 1.1× 139 1.1× 34 557
A. Rice United States 9 490 1.0× 246 1.0× 226 1.0× 196 0.9× 142 1.1× 12 554
M. W. Leksono United States 9 407 0.8× 186 0.7× 265 1.1× 200 0.9× 73 0.6× 16 492
Yen-Sheng Lin Taiwan 7 358 0.7× 156 0.6× 116 0.5× 229 1.1× 67 0.5× 9 425
W. Imler United States 7 529 1.1× 242 1.0× 312 1.3× 208 1.0× 100 0.8× 10 596
Masanobu Hiroki Japan 14 579 1.2× 316 1.3× 326 1.4× 226 1.1× 114 0.9× 53 651
Kensaku Motoki Japan 6 559 1.1× 284 1.1× 245 1.0× 257 1.2× 132 1.1× 6 603

Countries citing papers authored by Yu. Melnik

Since Specialization
Citations

This map shows the geographic impact of Yu. Melnik's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yu. Melnik with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yu. Melnik more than expected).

Fields of papers citing papers by Yu. Melnik

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yu. Melnik. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yu. Melnik. The network helps show where Yu. Melnik may publish in the future.

Co-authorship network of co-authors of Yu. Melnik

This figure shows the co-authorship network connecting the top 25 collaborators of Yu. Melnik. A scholar is included among the top collaborators of Yu. Melnik based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yu. Melnik. Yu. Melnik is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Melnik, Yu., et al.. (2018). ОСОБЛИВОСТІ УПРАВЛІННЯ ЕРГАТИЧНОЮ ТЕЛЕКОМУНІКАЦІЙНОЮ СИСТЕМОЮ СПЕЦІАЛЬНОГО ПРИЗНАЧЕННЯ. Системи управління навігації та зв’язку Збірник наукових праць. 2(48). 14–19.
2.
Melnik, Yu., O. V. Kovalenkov, V. Soukhoveev, et al.. (2004). Heteroepitaxial growth of GaN, AlN, and AlGaN layers on sic substrates by HVPE. 332–333. 1 indexed citations
3.
Melnik, Yu., V. Soukhoveev, V. Ivantsov, et al.. (2003). AlN substrates: fabrication via vapor phase growth and characterization. physica status solidi (a). 200(1). 22–25. 16 indexed citations
4.
Usikov, A., Dae Woo Kim, А. И. Печников, et al.. (2003). Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire‐based templates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2580–2584. 3 indexed citations
5.
Melnik, Yu., et al.. (2003). First AlGaN Free-Standing Wafers. MRS Proceedings. 764. 5 indexed citations
6.
Luo, B., J. W. Johnson, O. Kryliouk, et al.. (2002). High breakdown M–I–M structures on bulk AlN. Solid-State Electronics. 46(4). 573–576. 15 indexed citations
7.
Kryliouk, O., et al.. (2002). GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates. Materials science forum. 389-393. 1473–1476. 1 indexed citations
8.
Melnik, Yu., D. Tsvetkov, А. И. Печников, et al.. (2001). Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy. physica status solidi (a). 188(1). 463–466. 21 indexed citations
9.
Soukhoveev, V., V. Ivantsov, Yu. Melnik, et al.. (2001). Characterization of 2.5-Inch Diameter Bulk GaN Grown from Melt-Solution. physica status solidi (a). 188(1). 411–414. 9 indexed citations
10.
Melnik, Yu., D. Tsvetkov, А. И. Печников, et al.. (2001). Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy. physica status solidi (a). 188(1). 463–466. 1 indexed citations
11.
12.
Zubrilov, A. S., et al.. (1999). Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy. Semiconductors. 33(10). 1067–1071. 11 indexed citations
13.
Cheng, T.S., С. В. Новиков, R. P. Campion, et al.. (1999). The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates. Journal of Crystal Growth. 197(1-2). 12–18. 8 indexed citations
14.
Salviati, G., M. Albrecht, N. Armani, et al.. (1999). Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN. physica status solidi (a). 171(1). 325–339. 75 indexed citations
15.
Kuznetsov, N.I., A. E. Nikolaev, A. S. Zubrilov, Yu. Melnik, & V. Dmitriev. (1999). Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates. Applied Physics Letters. 75(20). 3138–3140. 53 indexed citations
16.
Никитина, И.П., et al.. (1999). Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE. Materials Science and Engineering B. 61-62. 325–329. 2 indexed citations
17.
Kuznetsov, N.I., et al.. (1997). Electrical characteristics of GaN/6H-SiC n-p heterojunctions. Materials Science and Engineering B. 46(1-3). 74–78. 18 indexed citations
18.
Nikolaev, A. E., Yu. Melnik, N.I. Kuznetsov, et al.. (1997). GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy. MRS Proceedings. 482. 10 indexed citations
19.
Melnik, Yu., A. E. Nikolaev, И.П. Никитина, Konstantin Vassilevski, & V. Dmitriev. (1997). Properties of Free-Standing GaN Bulk Crystals Grown by HVPE. MRS Proceedings. 482. 26 indexed citations
20.
Jacobson, M. A., D. K. Nelson, Yu. Melnik, & А. В. Селькин. (1995). Some new fundamental properties of GaN single-crystal films on SiC and sapphire substrates. Il Nuovo Cimento D. 17(11-12). 1509–1512. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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