C. H. Carter

714 total citations
15 papers, 574 citations indexed

About

C. H. Carter is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, C. H. Carter has authored 15 papers receiving a total of 574 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in C. H. Carter's work include Silicon Carbide Semiconductor Technologies (13 papers), Semiconductor materials and devices (9 papers) and Semiconductor materials and interfaces (5 papers). C. H. Carter is often cited by papers focused on Silicon Carbide Semiconductor Technologies (13 papers), Semiconductor materials and devices (9 papers) and Semiconductor materials and interfaces (5 papers). C. H. Carter collaborates with scholars based in United States, Russia and China. C. H. Carter's co-authors include K. G. Irvine, V. Dmitriev, N.I. Kuznetsov, V. F. Tsvetkov, Jason R. Jenny, H. McD. Hobgood, R Glass, E. V. Kalinina, Elena Kalinina and Michael Dudley and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Electronic Materials.

In The Last Decade

C. H. Carter

15 papers receiving 549 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. H. Carter United States	12	465	241	218	97	85	15	574
Stephan G. Mueller United States	12	283 0.6×	176 0.7×	106 0.5×	139 1.4×	102 1.2×	32	454
S. Sriram United States	14	606 1.3×	99 0.4×	180 0.8×	63 0.6×	85 1.0×	53	670
C.H. Carter United States	8	588 1.3×	70 0.3×	157 0.7×	83 0.9×	106 1.2×	14	644
M. Roth United States	12	364 0.8×	131 0.5×	121 0.6×	119 1.2×	79 0.9×	25	441
M. P. Shcheglov Russia	8	159 0.3×	138 0.6×	77 0.4×	66 0.7×	103 1.2×	64	294
Edward Sanchez United States	18	671 1.4×	56 0.2×	172 0.8×	139 1.4×	107 1.3×	72	763
K. Asai Japan	12	399 0.9×	87 0.4×	180 0.8×	39 0.4×	115 1.4×	47	517
Calvin H. Carter China	16	621 1.3×	79 0.3×	148 0.7×	114 1.2×	96 1.1×	23	671
M. F. da Silva Portugal	11	208 0.4×	98 0.4×	295 1.4×	122 1.3×	201 2.4×	17	425
K. G. Irvine United States	15	966 2.1×	338 1.4×	363 1.7×	175 1.8×	122 1.4×	35	1.1k

Countries citing papers authored by C. H. Carter

Since Specialization

Citations

This map shows the geographic impact of C. H. Carter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. H. Carter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. H. Carter more than expected).

Fields of papers citing papers by C. H. Carter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. H. Carter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. H. Carter. The network helps show where C. H. Carter may publish in the future.

Co-authorship network of co-authors of C. H. Carter

This figure shows the co-authorship network connecting the top 25 collaborators of C. H. Carter. A scholar is included among the top collaborators of C. H. Carter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. H. Carter. C. H. Carter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Kumar, Ravi, J.M. Borrego, R.J. Gutmann, et al.. (2007). Microwave photoconductivity decay characterization of high-purity 4H-SiC substrates. Journal of Applied Physics. 102(1). 15 indexed citations

Jenny, Jason R., D.P. Malta, V. F. Tsvetkov, et al.. (2006). Effects of annealing on carrier lifetime in 4H-SiC. Journal of Applied Physics. 100(11). 34 indexed citations

Müller, St.G., Joseph J. Sumakeris, M.F. Brady, et al.. (2004). Defects in SiC substrates and epitaxial layers affecting semiconductor device performance. The European Physical Journal Applied Physics. 27(1-3). 29–35. 19 indexed citations

Jenny, Jason R., D.P. Malta, St.G. Müller, et al.. (2003). High-purity semi-insulating 4H-SiC for microwave device applications. Journal of Electronic Materials. 32(5). 432–436. 47 indexed citations

Jenny, Jason R., St.G. Müller, A. Powell, et al.. (2002). High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method. Journal of Electronic Materials. 31(5). 366–369. 58 indexed citations

Paisley, Michael J., K. G. Irvine, Olof Kordina, et al.. (1999). Characterization of Thick 4H-SiC Hot-Wall CVD Layers. MRS Proceedings. 572. 7 indexed citations

Huang, Xianrong, et al.. (1999). Direct evidence of micropipe-related pure superscrew dislocations in SiC. Applied Physics Letters. 74(3). 353–355. 87 indexed citations

Tsvetkov, V. F., D. Henshall, M.F. Brady, R Glass, & C. H. Carter. (1998). A Theoretical and Empirical Perspective of SiC Bulk Growth. MRS Proceedings. 512. 11 indexed citations

Huang, Xianrong, et al.. (1998). Contrast Mechanism in Superscrew Dislocation Images on Synchrotron Back-Reflection Topographs. MRS Proceedings. 524. 3 indexed citations

10.

Irvine, K. G., Ranbir Singh, Michael J. Paisley, et al.. (1998). 5.5 kV Bipolar Diodes From High Quality CVD 411-SiC. MRS Proceedings. 512. 13 indexed citations

11.

Dmitriev, V., K. G. Irvine, C. H. Carter, N.I. Kuznetsov, & E. V. Kalinina. (1996). Electric breakdown in GaN p-n junctions. Applied Physics Letters. 68(2). 229–231. 91 indexed citations

12.

Kalinina, Elena, N.I. Kuznetsov, V. Dmitriev, K. G. Irvine, & C. H. Carter. (1996). Schottky barriers on n-GaN grown on SiC. Journal of Electronic Materials. 25(5). 831–834. 86 indexed citations

13.

Zubrilov, A. S., В. И. Николаев, D. Tsvetkov, et al.. (1995). Spontaneous and stimulated emission from photopumped GaN grown on SiC. Applied Physics Letters. 67(4). 533–535. 68 indexed citations

14.

Palmour, John W., C. H. Carter, C.E. Weitzel, & Kevin J. Nordquist. (1994). High Power and High Frequency Silicon Carbide Devices. MRS Proceedings. 339. 28 indexed citations

15.

Dudley, Michael, et al.. (1994). Synchrotron White Beam Topography Studies of Screw Dislocations in 6H-Sic Single Crystals. MRS Proceedings. 375. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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