Uygar E. Avci

3.3k total citations · 2 hit papers
57 papers, 2.2k citations indexed

About

Uygar E. Avci is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Uygar E. Avci has authored 57 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 16 papers in Biomedical Engineering and 15 papers in Materials Chemistry. Recurrent topics in Uygar E. Avci's work include Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (36 papers) and Ferroelectric and Negative Capacitance Devices (21 papers). Uygar E. Avci is often cited by papers focused on Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (36 papers) and Ferroelectric and Negative Capacitance Devices (21 papers). Uygar E. Avci collaborates with scholars based in United States, Belgium and Austria. Uygar E. Avci's co-authors include Ian A. Young, Daniel H. Morris, Rafael Rios, Kelin J. Kuhn, Raseong Kim, Ashish Verma Penumatcha, Theresia Knobloch, Tibor Grasser, Thomas D. Anthopoulos and Zhihong Chen and has published in prestigious journals such as Nano Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

Uygar E. Avci

54 papers receiving 2.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Transistors based on two-dimensional materials for future integrated circuits

2021 650 citations Saptarshi Das, Amritanand Sebastian et al. Nature Electronics profile →
Tunnel Field-Effect Transistors: Prospects and Challenges

2015 387 citations Uygar E. Avci, Daniel H. Morris et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Uygar E. Avci United States	22	1.9k	837	490	149	58	57	2.2k
Chris Breslin United States	15	1.0k 0.5×	701 0.8×	588 1.2×	363 2.4×	115 2.0×	22	1.4k
Angada B. Sachid United States	26	2.7k 1.4×	2.4k 2.9×	561 1.1×	185 1.2×	128 2.2×	58	3.8k
Kirby K. H. Smithe United States	20	919 0.5×	1.4k 1.7×	311 0.6×	107 0.7×	120 2.1×	33	1.7k
Michael Waltl Austria	27	2.3k 1.2×	1.4k 1.7×	273 0.6×	154 1.0×	126 2.2×	128	2.8k
Jinjuan Xiang China	18	1.2k 0.6×	497 0.6×	182 0.4×	156 1.0×	65 1.1×	116	1.3k
G. Rzepa Austria	21	1.5k 0.8×	676 0.8×	137 0.3×	88 0.6×	35 0.6×	81	1.7k
Darsen D. Lu United States	18	1.1k 0.6×	429 0.5×	276 0.6×	80 0.5×	43 0.7×	63	1.4k
Daewon Ha South Korea	19	1.6k 0.9×	414 0.5×	184 0.4×	121 0.8×	82 1.4×	86	1.7k
K. Rim United States	16	1.5k 0.8×	367 0.4×	382 0.8×	281 1.9×	47 0.8×	41	1.7k
Nathan J. Conrad United States	9	1.2k 0.6×	1.4k 1.7×	235 0.5×	128 0.9×	135 2.3×	24	1.8k

Countries citing papers authored by Uygar E. Avci

Since Specialization

Citations

This map shows the geographic impact of Uygar E. Avci's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Uygar E. Avci with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Uygar E. Avci more than expected).

Fields of papers citing papers by Uygar E. Avci

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Uygar E. Avci. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Uygar E. Avci. The network helps show where Uygar E. Avci may publish in the future.

Co-authorship network of co-authors of Uygar E. Avci

This figure shows the co-authorship network connecting the top 25 collaborators of Uygar E. Avci. A scholar is included among the top collaborators of Uygar E. Avci based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Uygar E. Avci. Uygar E. Avci is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Neilson, Kathryn M., Charles C. Mokhtarzadeh, Pratyush Buragohain, et al.. (2025). Threshold Voltage Control through Solvent Doping of Monolayer MoS₂ Transistors. Nano Letters. 25(19). 7778–7784.

Siddiqui, Shahbaz Ahmed, Sou-Chi Chang, Gyu-Yeong Choe, et al.. (2025). FeRAM Capacitor with Novel Low-Power, Non-destructive and High Endurance Read operation for High-density Embedded Memory. 1–3. 1 indexed citations

Kerkhof, Mark van de, Henry Medina, P. Morin, et al.. (2024). Advanced EUV patterning of 2D TMDs for CMOS integration. 47–47.

Luo, Yuan-Chun, Anni Lu, Yandong Luo, et al.. (2024). Endurance-Aware Compiler for 3-D Stackable FeRAM as Global Buffer in TPU-Like Architecture. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 32(9). 1696–1703.

Zheng, Dongqi, Mengwei Si, Sou-Chi Chang, et al.. (2022). Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions. Journal of Applied Physics. 132(5). 10 indexed citations

Chang, Sou-Chi & Uygar E. Avci. (2022). Hafnium-based FeRAM for Next-generation High-speed and High-Density Embedded Memory. 1–2. 3 indexed citations

Chang, Sou-Chi, M. Popovici, Chia‐Ching Lin, et al.. (2022). Multi-domain Phase-field Modeling of Polycrystalline Hafnia-based (Anti-)ferroelectrics Capable of Representing Defects, Wake-up and Fatigue. 2022 International Electron Devices Meeting (IEDM). 13.1.1–13.1.4. 4 indexed citations

Das, Saptarshi, Amritanand Sebastian, Eric Pop, et al.. (2021). Transistors based on two-dimensional materials for future integrated circuits. Nature Electronics. 4(11). 786–799. 650 indexed citations breakdown →

O’Brien, Kevin P., Carl H. Naylor, Ashish Verma Penumatcha, et al.. (2021). Advancing Monolayer 2-D nMOS and pMOS Transistor Integration From Growth to Van Der Waals Interface Engineering for Ultimate CMOS Scaling. IEEE Transactions on Electron Devices. 68(12). 6592–6598. 5 indexed citations

10.

Chang, Sou-Chi, Nazila Haratipour, Shriram Shivaraman, et al.. (2020). Anti-ferroelectric Hf_xZr_1-xO₂ Capacitors for High-density 3-D Embedded-DRAM. 28.1.1–28.1.4. 27 indexed citations

11.

Vaidyanathan, Kaushik, Daniel H. Morris, Uygar E. Avci, et al.. (2018). Improving Energy Efficiency of Low-Voltage Logic by Technology-Driven Design. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. 4(1). 10–18. 4 indexed citations

12.

Morris, Daniel H., Uygar E. Avci, Kaushik Vaidyanathan, et al.. (2017). Novel TFET circuits for high-performance energy-efficient heterogeneous MOSFET/TFET logic. 1–2. 3 indexed citations

13.

Avci, Uygar E., Daniel H. Morris, Sayed Hasan, et al.. (2013). Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at L<inf>g</inf>=13nm, including P-TFET and variation considerations. 33.4.1–33.4.4. 37 indexed citations

14.

Avci, Uygar E., Rafael Rios, Kelin J. Kuhn, & Ian A. Young. (2011). Comparison of performance, switching energy and process variations for the TFET and MOSFET in logic. Symposium on VLSI Technology. 124–125. 96 indexed citations

15.

Avci, Uygar E., Rafael Rios, Kelin J. Kuhn, & Ian A. Young. (2011). Comparison of power and performance for the TFET and MOSFET and considerations for P-TFET. 869–872. 35 indexed citations

16.

Ban, Ibrahim, et al.. (2010). Integration of Back-Gate doping for 15-nm node floating body cell (FBC) memory. 159–160. 3 indexed citations

17.

Ban, Ibrahim, et al.. (2006). Floating Body Cell with Independently-Controlled Double Gates for High Density Memory. 1–4. 32 indexed citations

18.

Kumar, Amitesh, et al.. (2006). Super-self-aligned back-gate/double-gate planar transistors with thick source/drain and thin silicon channel. 425. 37–38. 1 indexed citations

19.

Avci, Uygar E., Arvind Kumar, & Sandip Tiwari. (2004). Theoretical and Experimental Analysis of Back-Gated SOI MOSFETs and Back-Floating NVRAMs. JSTS Journal of Semiconductor Technology and Science. 4(1). 18–26. 2 indexed citations

20.

Avci, Uygar E. & Sandip Tiwari. (2004). A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception. Microelectronics Journal. 36(1). 67–75. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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