Michel Bockstedte

2.9k total citations
82 papers, 2.3k citations indexed

About

Michel Bockstedte is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Michel Bockstedte has authored 82 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Electrical and Electronic Engineering, 38 papers in Materials Chemistry and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Michel Bockstedte's work include Silicon Carbide Semiconductor Technologies (42 papers), Semiconductor materials and devices (34 papers) and Advanced ceramic materials synthesis (11 papers). Michel Bockstedte is often cited by papers focused on Silicon Carbide Semiconductor Technologies (42 papers), Semiconductor materials and devices (34 papers) and Advanced ceramic materials synthesis (11 papers). Michel Bockstedte collaborates with scholars based in Germany, Austria and Hungary. Michel Bockstedte's co-authors include Oleg Pankratov, Alexander Mattausch, Ádám Gali, E. Pehlke, Ángel Rubio, Andrea Marini, Matthias Scheffler, Matthias Scheffler, Martin Fuchs and Erik Janzén and has published in prestigious journals such as Physical Review Letters, Angewandte Chemie International Edition and Nature Communications.

In The Last Decade

Michel Bockstedte

79 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Michel Bockstedte Germany 25 1.5k 1.2k 687 286 231 82 2.3k
P. Käckell Germany 17 891 0.6× 769 0.7× 476 0.7× 159 0.6× 207 0.9× 32 1.4k
P. H. Fuoss United States 20 745 0.5× 1.1k 1.0× 502 0.7× 214 0.7× 342 1.5× 29 1.7k
Shangda Xia China 20 859 0.6× 1.9k 1.6× 291 0.4× 429 1.5× 257 1.1× 76 2.0k
J. Olivares Spain 29 1.4k 0.9× 1.5k 1.3× 1.2k 1.7× 193 0.7× 294 1.3× 105 3.0k
A. L. Shluger United Kingdom 20 524 0.3× 681 0.6× 587 0.9× 108 0.4× 107 0.5× 48 1.3k
Kathleen I. Schaffers United States 22 1.4k 0.9× 921 0.8× 887 1.3× 255 0.9× 339 1.5× 94 2.0k
В. А. Пустоваров Russia 22 933 0.6× 1.9k 1.6× 428 0.6× 359 1.3× 444 1.9× 251 2.3k
A. Declémy France 23 713 0.5× 737 0.6× 308 0.4× 330 1.2× 94 0.4× 93 1.5k
A. Pajączkowska Poland 22 875 0.6× 1.3k 1.1× 382 0.6× 235 0.8× 594 2.6× 147 1.9k
D. O. Henderson United States 23 677 0.5× 1.1k 0.9× 322 0.5× 221 0.8× 224 1.0× 111 1.6k

Countries citing papers authored by Michel Bockstedte

Since Specialization
Citations

This map shows the geographic impact of Michel Bockstedte's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michel Bockstedte with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michel Bockstedte more than expected).

Fields of papers citing papers by Michel Bockstedte

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michel Bockstedte. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michel Bockstedte. The network helps show where Michel Bockstedte may publish in the future.

Co-authorship network of co-authors of Michel Bockstedte

This figure shows the co-authorship network connecting the top 25 collaborators of Michel Bockstedte. A scholar is included among the top collaborators of Michel Bockstedte based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michel Bockstedte. Michel Bockstedte is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Grasser, Tibor, H. Reisinger, Dominic Waldhoer, et al.. (2024). A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. 3B.1–1. 2 indexed citations
2.
Bockstedte, Michel, et al.. (2024). Spin-Orbit Coupling of Color Centers for Quantum Applications. Key engineering materials. 984. 1–7. 1 indexed citations
3.
Fuchs, Alain H., Marcus Fischer, Martin Hartmann, et al.. (2024). Optical and electrical studies on the TS defect in 4H-SiC. Journal of Physics D Applied Physics. 58(1). 15105–15105.
4.
Grasser, Tibor, Maximilian W. Feil, H. Reisinger, et al.. (2024). Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling. IEEE Transactions on Electron Devices. 71(7). 4218–4226. 3 indexed citations
5.
Feil, Maximilian W., H. Reisinger, Thomas Aichinger, et al.. (2024). Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs. Physical Review Applied. 22(2).
6.
7.
8.
Kobayashi, Takuma, et al.. (2023). The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 426. 43–48. 3 indexed citations
9.
Widmann, Matthias, Matthias Niethammer, Dmitry Yu. Fedyanin, et al.. (2019). Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device. Nano Letters. 19(10). 7173–7180. 64 indexed citations
10.
Bockstedte, Michel, et al.. (2018). Ab initio description of highly correlated states in defects for realizing quantum bits. npj Quantum Materials. 3(1). 82 indexed citations
11.
Bockstedte, Michel, et al.. (2018). Dynamical simulation of electron transfer processes in self-assembled monolayers at metal surfaces using a density matrix approach. The Journal of Chemical Physics. 148(12). 124705–124705. 3 indexed citations
12.
Rubio‐Pons, Òscar, et al.. (2013). Dynamical Simulation of Electron Transfer Processes in Alkanethiolate Self-Assembled Monolayers at the Au(111) Surface. The Journal of Physical Chemistry C. 117(48). 25334–25342. 14 indexed citations
13.
Bockstedte, Michel, Andrea Marini, Oleg Pankratov, & Ángel Rubio. (2010). Many-Body Effects in the Excitation Spectrum of a Defect in SiC. Physical Review Letters. 105(2). 26401–26401. 61 indexed citations
14.
Bovensiepen, U., Cornelius Gahl, Julia Stähler, et al.. (2008). A Dynamic Landscape from Femtoseconds to Minutes for Excess Electrons at Ice−Metal Interfaces. The Journal of Physical Chemistry C. 113(3). 979–988. 51 indexed citations
15.
Umeda, T., Nguyên Tiên Són, Junichi Isoya, et al.. (2006). Identification of the Carbon Antisite-Vacancy Pair in4H-SiC. Physical Review Letters. 96(14). 145501–145501. 66 indexed citations
16.
Mattausch, Alexander, Michel Bockstedte, & Oleg Pankratov. (2005). Ab-Initio Study of Dopant Interstitials in 4H-SiC. Materials science forum. 483-485. 523–526. 9 indexed citations
17.
Mattausch, Alexander, Michel Bockstedte, & Oleg Pankratov. (2004). Structure and vibrational spectra of carbon clusters in SiC. Physical Review B. 70(23). 44 indexed citations
18.
Bockstedte, Michel, Matthias Heid, & Oleg Pankratov. (2003). SiCの固有欠陥の特徴 超微細テンソルのab initio計算. Physical Review B. 67(19). 1–193102. 7 indexed citations
19.
Bockstedte, Michel, et al.. (2001). Efficient self-consistent method using basis splines for the investigation of interacting two-dimensional electrons in a random impurity potential. Physical review. B, Condensed matter. 64(24). 6 indexed citations
20.
Bockstedte, Michel & Oleg Pankratov. (2000). Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion. Materials science forum. 338-342. 949–952. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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