Matthew Porter

574 total citations · 1 hit paper
12 papers, 425 citations indexed

About

Matthew Porter is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Matthew Porter has authored 12 papers receiving a total of 425 indexed citations (citations by other indexed papers that have themselves been cited), including 6 papers in Condensed Matter Physics, 6 papers in Electrical and Electronic Engineering and 4 papers in Materials Chemistry. Recurrent topics in Matthew Porter's work include GaN-based semiconductor devices and materials (6 papers), Semiconductor materials and devices (5 papers) and Advanced ceramic materials synthesis (3 papers). Matthew Porter is often cited by papers focused on GaN-based semiconductor devices and materials (6 papers), Semiconductor materials and devices (5 papers) and Advanced ceramic materials synthesis (3 papers). Matthew Porter collaborates with scholars based in United States, United Kingdom and India. Matthew Porter's co-authors include Jon Binner, Ji Zou, Vinothini Venkatachalam, T.S.R.Ch. Murthy, Ben Baker, Andrea D’Angiò, V. Rubio, Prabhu Ramanujam, Tailin Zhang and Karl D. Hobart and has published in prestigious journals such as Journal of the European Ceramic Society, International Materials Reviews and Polymers.

In The Last Decade

Matthew Porter

12 papers receiving 413 citations

Hit Papers

Selection, processing, properties and applications of ult... 2019 2026 2021 2023 2019 100 200 300

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Matthew Porter United States 7 287 272 184 63 57 12 425
Islam S. Humail China 13 217 0.8× 318 1.2× 281 1.5× 41 0.7× 38 0.7× 16 498
M. D. Vlajic Canada 9 213 0.7× 154 0.6× 202 1.1× 57 0.9× 18 0.3× 13 345
Masamitsu Imai Japan 13 391 1.4× 254 0.9× 251 1.4× 162 2.6× 9 0.2× 38 491
A. Yu. Potanin Russia 17 367 1.3× 588 2.2× 351 1.9× 38 0.6× 18 0.3× 63 715
Cosan Unuvar United States 11 331 1.2× 461 1.7× 263 1.4× 54 0.9× 9 0.2× 14 564
G.N. Babini Italy 11 261 0.9× 134 0.5× 171 0.9× 90 1.4× 35 0.6× 26 355
Hideki Hirotsuru Japan 9 594 2.1× 506 1.9× 282 1.5× 93 1.5× 14 0.2× 19 670
I. Rosales Mexico 12 93 0.3× 383 1.4× 280 1.5× 38 0.6× 10 0.2× 51 538
Laura C. Stearns United States 8 491 1.7× 432 1.6× 197 1.1× 91 1.4× 8 0.1× 10 641
Amélie Veillère France 12 99 0.3× 201 0.7× 189 1.0× 61 1.0× 6 0.1× 20 325

Countries citing papers authored by Matthew Porter

Since Specialization
Citations

This map shows the geographic impact of Matthew Porter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matthew Porter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matthew Porter more than expected).

Fields of papers citing papers by Matthew Porter

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matthew Porter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matthew Porter. The network helps show where Matthew Porter may publish in the future.

Co-authorship network of co-authors of Matthew Porter

This figure shows the co-authorship network connecting the top 25 collaborators of Matthew Porter. A scholar is included among the top collaborators of Matthew Porter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Matthew Porter. Matthew Porter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

12 of 12 papers shown
1.
Murthy, T.S.R.Ch., Vinothini Venkatachalam, Ji Zou, Matthew Porter, & Jon Binner. (2023). Oxidation studies of SiC-coated 2.5D carbon fibre preforms. Open Ceramics. 15. 100385–100385. 7 indexed citations
2.
Ebrish, Mona A., Matthew Porter, Alan G. Jacobs, et al.. (2023). Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes. Applied Physics Express. 16(11). 116501–116501. 2 indexed citations
3.
Porter, Matthew, et al.. (2022). Effect of processing on the stability and electrical properties of pressureless sintered graphene oxide–alumina composites. Ceramics International. 48(11). 15839–15847. 4 indexed citations
4.
Ebrish, Mona A., Matthew Porter, Alan G. Jacobs, et al.. (2022). Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination. Crystals. 12(5). 623–623. 7 indexed citations
5.
Porter, Matthew, et al.. (2022). Computational characterisation of microwave heating of fibre preforms for CVI of SiCf/SiC composites. Journal of the European Ceramic Society. 43(5). 1808–1827. 9 indexed citations
6.
Phillips, Jonathan, et al.. (2020). Impact of Current and Temperature on Extremely Low Loading Epoxy-CNT Conductive Composites. Polymers. 12(4). 867–867. 8 indexed citations
7.
Binner, Jon, Matthew Porter, Ben Baker, et al.. (2019). Selection, processing, properties and applications of ultra-high temperature ceramic matrix composites, UHTCMCs – a review. International Materials Reviews. 65(7). 389–444. 331 indexed citations breakdown →
8.
Anderson, Travis J., Andrew D. Koehler, Petra Specht, et al.. (2015). (Invited) Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons. ECS Transactions. 66(1). 15–20. 5 indexed citations
9.
Koehler, Andrew D., Travis J. Anderson, Jennifer K. Hite, et al.. (2014). Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation. 33–35. 10 indexed citations
10.
Koehler, Andrew D., Karl D. Hobart, T.R. Weatherford, et al.. (2014). Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs. IEEE Electron Device Letters. 35(12). 1194–1196. 33 indexed citations
11.
Anderson, Travis J., Andrew D. Koehler, Marko J. Tadjer, et al.. (2013). Reliability of GaN HEMTs: Electrical and Radiation-Induced Failure Mechanism. ECS Transactions. 58(4). 221–225. 4 indexed citations
12.
Porter, Matthew. (2009). Intake manifold design using computational fluid dynamics. 1(2). 31. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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