Chen-Hsi Lin

666 total citations
19 papers, 585 citations indexed

About

Chen-Hsi Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Chen-Hsi Lin has authored 19 papers receiving a total of 585 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 3 papers in Polymers and Plastics. Recurrent topics in Chen-Hsi Lin's work include Advanced Memory and Neural Computing (14 papers), Ferroelectric and Negative Capacitance Devices (11 papers) and Semiconductor materials and devices (8 papers). Chen-Hsi Lin is often cited by papers focused on Advanced Memory and Neural Computing (14 papers), Ferroelectric and Negative Capacitance Devices (11 papers) and Semiconductor materials and devices (8 papers). Chen-Hsi Lin collaborates with scholars based in Taiwan, United States and Slovakia. Chen-Hsi Lin's co-authors include Tseung‐Yuen Tseng, Wen-Yueh Jang, Chun‐Chieh Lin, Tuo‐Hung Hou, Chung-Wei Hsu, I‐Ting Wang, Chih-Yang Lin, Yi-Wei Lin, Chun‐Li Lo and ChiaHua Ho and has published in prestigious journals such as IEEE Transactions on Electron Devices, Journal of Non-Crystalline Solids and Japanese Journal of Applied Physics.

In The Last Decade

Chen-Hsi Lin

19 papers receiving 577 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chen-Hsi Lin Taiwan 11 553 201 155 109 27 19 585
Manzar Siddik South Korea 16 554 1.0× 168 0.8× 207 1.3× 145 1.3× 19 0.7× 31 586
K. Tsunoda Japan 7 597 1.1× 146 0.7× 197 1.3× 120 1.1× 13 0.5× 17 613
S. O. Park South Korea 6 383 0.7× 107 0.5× 108 0.7× 55 0.5× 29 1.1× 14 410
C. Gopalan United States 10 633 1.1× 203 1.0× 185 1.2× 152 1.4× 18 0.7× 13 660
S. Muraoka Japan 12 470 0.8× 81 0.4× 96 0.6× 106 1.0× 43 1.6× 26 517
Jing Wen China 12 401 0.7× 255 1.3× 124 0.8× 70 0.6× 38 1.4× 28 460
Gabriele Luca Donadio Belgium 13 405 0.7× 304 1.5× 87 0.6× 36 0.3× 20 0.7× 33 459
Wen-Yueh Jang Taiwan 7 362 0.7× 121 0.6× 85 0.5× 73 0.7× 22 0.8× 12 378
Wei-Su Chen Taiwan 15 594 1.1× 138 0.7× 131 0.8× 163 1.5× 16 0.6× 39 612
Dong-jun Seong South Korea 16 866 1.6× 268 1.3× 282 1.8× 191 1.8× 38 1.4× 25 896

Countries citing papers authored by Chen-Hsi Lin

Since Specialization
Citations

This map shows the geographic impact of Chen-Hsi Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chen-Hsi Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chen-Hsi Lin more than expected).

Fields of papers citing papers by Chen-Hsi Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chen-Hsi Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chen-Hsi Lin. The network helps show where Chen-Hsi Lin may publish in the future.

Co-authorship network of co-authors of Chen-Hsi Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Chen-Hsi Lin. A scholar is included among the top collaborators of Chen-Hsi Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chen-Hsi Lin. Chen-Hsi Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Ho, ChiaHua, et al.. (2016). Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure. IEEE Electron Device Letters. 37(10). 1284–1287. 36 indexed citations
2.
Hudec, Boris, Chung-Wei Hsu, I‐Ting Wang, et al.. (2016). 3D resistive RAM cell design for high-density storage class memory—a review. Science China Information Sciences. 59(6). 47 indexed citations
3.
Hsu, Chung-Wei, I‐Ting Wang, Chun‐Li Lo, et al.. (2013). Self-rectifying bipolar TaO x /TiO 2 RRAM with superior endurance over 10 12 cycles for 3D high-density storage-class memory. Symposium on VLSI Technology. 6576643. 85 indexed citations
4.
Hsu, Chung-Wei, I‐Ting Wang, Mei‐Chin Chen, et al.. (2013). 3D vertical TaO<inf>x</inf>/TiO<inf>2</inf> RRAM with over 10<sup>3</sup> self-rectifying ratio and sub-&#x03BC;A operating current. 10.4.1–10.4.4. 21 indexed citations
5.
Huang, Jiun-Jia, Tuo‐Hung Hou, Chung-Wei Hsu, et al.. (2012). Flexible One Diode–One Resistor Crossbar Resistive-Switching Memory. Japanese Journal of Applied Physics. 51(4S). 04DD09–04DD09. 42 indexed citations
6.
Lin, Yi-Wei, et al.. (2011). Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM. IEEE Electron Device Letters. 32(8). 1026–1028. 90 indexed citations
7.
8.
Huang, Yihan, et al.. (2011). High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed $\hbox{SrZrO}_{3}$ Memory Devices. IEEE Transactions on Electron Devices. 58(4). 1182–1188. 8 indexed citations
9.
Lin, Chen-Hsi, et al.. (2010). Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of $\hbox{SrZrO}_{3}$-Based Memory Films. IEEE Transactions on Electron Devices. 57(8). 1801–1808. 41 indexed citations
10.
Rahaman, S. Z., S. Maikap, Chen-Hsi Lin, et al.. (2009). Low current and voltage resistive switching memory device using novel Cu/Ta<inf>2</inf>O<inf>5</inf>/W structure. 331. 33–34. 2 indexed citations
11.
Lin, Chih-Yang, et al.. (2008). Improvement of Resistive Switching Characteristics in $\hbox{SrZrO}_{3}$ Thin Films With Embedded Cr Layer. IEEE Electron Device Letters. 29(10). 1108–1111. 40 indexed citations
12.
Lin, Chun‐Chieh, et al.. (2007). Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped $\hbox{SrZrO}_{3}$ Thin Films. IEEE Transactions on Electron Devices. 54(12). 3146–3151. 55 indexed citations
13.
Lin, Chun‐Chieh, et al.. (2006). Resistive Switching Mechanisms ofV-Doped$hboxSrZrO_3$Memory Films. IEEE Electron Device Letters. 27(9). 725–727. 85 indexed citations
14.
Chao, Tien‐Sheng, et al.. (1998). Improving radiation hardness of EEPROM/flash cell by N2O annealing. IEEE Electron Device Letters. 19(7). 256–258. 11 indexed citations
15.
Chao, Tien‐Sheng, et al.. (1997). Improved flash cell performance by N/sub 2/O annealing of interpoly oxide. IEEE Electron Device Letters. 18(7). 343–345. 7 indexed citations
16.
Chao, Tien‐Sheng, Horng‐Chih Lin, Len-Yi Leu, et al.. (1997). A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N2O Annealing. 1 indexed citations
17.
Kapoor, A. K., Chen-Hsi Lin, & Soo‐Young Oh. (1991). Effect of emitter-base reverse bias stress on high frequency parameters of bipolar transistors.. 188–192. 2 indexed citations
18.
Lin, Chen-Hsi & S.D. Senturia. (1983). The aging of hydrated aluminum oxide thin films. Sensors and Actuators. 4. 497–506. 5 indexed citations
19.
Lin, Chen-Hsi, et al.. (1983). Deep-level spectroscopy of reactively sputtered a-Si:H films. Journal of Non-Crystalline Solids. 57(2). 241–250. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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