Sheng-Chih Lai

624 total citations
37 papers, 477 citations indexed

About

Sheng-Chih Lai is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, Sheng-Chih Lai has authored 37 papers receiving a total of 477 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 24 papers in Materials Chemistry and 9 papers in Computer Networks and Communications. Recurrent topics in Sheng-Chih Lai's work include Semiconductor materials and devices (22 papers), Advanced Memory and Neural Computing (11 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Sheng-Chih Lai is often cited by papers focused on Semiconductor materials and devices (22 papers), Advanced Memory and Neural Computing (11 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Sheng-Chih Lai collaborates with scholars based in Taiwan, United States and Italy. Sheng-Chih Lai's co-authors include Hang-Ting Lue, Kuang-Yeu Hsieh, Erh-Kun Lai, Szu-Yu Wang, Chih‐Yuan Lu, Rich Liu, Tzu‐Hsuan Hsu, Pei-Ying Du, Kuang‐Chao Chen and Ling-Wu Yang and has published in prestigious journals such as Journal of Applied Physics, Journal of Alloys and Compounds and IEEE Transactions on Electron Devices.

In The Last Decade

Sheng-Chih Lai

36 papers receiving 463 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Sheng-Chih Lai Taiwan 13 437 219 98 50 37 37 477
Pieter Blomme Belgium 16 773 1.8× 152 0.7× 107 1.1× 20 0.4× 55 1.5× 61 789
K. Yahashi Japan 5 452 1.0× 93 0.4× 181 1.8× 41 0.8× 38 1.0× 7 553
L. Breuil Belgium 15 640 1.5× 198 0.9× 115 1.2× 17 0.3× 39 1.1× 70 657
Gitae Jeong South Korea 10 303 0.7× 151 0.7× 55 0.6× 33 0.7× 38 1.0× 27 345
H. Aochi Japan 5 446 1.0× 68 0.3× 183 1.9× 37 0.7× 21 0.6× 9 521
F. Ottogalli Italy 9 395 0.9× 362 1.7× 69 0.7× 29 0.6× 113 3.1× 11 470
M. Tosi Italy 9 424 1.0× 380 1.7× 74 0.8× 30 0.6× 124 3.4× 13 498
D. Takashima Japan 14 391 0.9× 99 0.5× 34 0.3× 53 1.1× 22 0.6× 54 435
G. Servalli Italy 7 261 0.6× 204 0.9× 20 0.2× 12 0.2× 34 0.9× 14 299
Wandong Kim South Korea 9 205 0.5× 48 0.2× 92 0.9× 25 0.5× 10 0.3× 26 248

Countries citing papers authored by Sheng-Chih Lai

Since Specialization
Citations

This map shows the geographic impact of Sheng-Chih Lai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sheng-Chih Lai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sheng-Chih Lai more than expected).

Fields of papers citing papers by Sheng-Chih Lai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sheng-Chih Lai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sheng-Chih Lai. The network helps show where Sheng-Chih Lai may publish in the future.

Co-authorship network of co-authors of Sheng-Chih Lai

This figure shows the co-authorship network connecting the top 25 collaborators of Sheng-Chih Lai. A scholar is included among the top collaborators of Sheng-Chih Lai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sheng-Chih Lai. Sheng-Chih Lai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hu, Chenyu, Chengjun Wu, Sheng-Chih Lai, et al.. (2025). Role of oxygen vacancies and cation distribution in controlling magnetic anisotropy of Ni-Zn ferrite nanoparticles. Journal of Alloys and Compounds. 1040. 183670–183670.
2.
Lin, Qing, Nathaniel S. Safron, Donglai Zhong, et al.. (2024). Enhancement-Mode Atomic Layer Deposited W-Doped In2O3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability. 1–4. 2 indexed citations
3.
Lü, Aifeng, P. J. Tzeng, M. H. Chang, et al.. (2024). P-type SnO Semiconductor Transistor and Application. 1–2. 3 indexed citations
4.
Khwa, Win-San, Sheng-Chih Lai, Ming‐Liang Wei, et al.. (2015). Greater than 2-bits/cell MLC storage for ultra high density phase change memory using a novel sensing scheme. T94–T95. 13 indexed citations
5.
Lai, Sheng-Chih, Seyoung Kim, M. BrightSky, et al.. (2013). A scalable volume-confined phase change memory using physical vapor deposition. Symposium on VLSI Technology. 5 indexed citations
6.
Kim, Sang‐Bum, Pei-Ying Du, Jing Li, et al.. (2012). Optimization of programming current on endurance of phase change memory. 1–2. 3 indexed citations
7.
Du, Pei-Ying, Jau-Yi Wu, Tzu‐Hsuan Hsu, et al.. (2012). The impact of melting during reset operation on the reliability of phase change memory. 6C.2.1–6C.2.6. 4 indexed citations
8.
Wang, Szu-Yu, Hang-Ting Lue, Tzu‐Hsuan Hsu, et al.. (2010). A high-endurance (≫100K) BE-SONOS NAND flash with a robust nitrided tunnel oxide/si interface. 11 indexed citations
9.
Hsu, Tzu‐Hsuan, Hang-Ting Lue, Ya‐Chin King, et al.. (2009). Physical Model of Field Enhancement and Edge Effects of FinFET Charge-Trapping NAND Flash Devices. IEEE Transactions on Electron Devices. 56(6). 1235–1242. 20 indexed citations
10.
Lue, Hang-Ting, Pei-Ying Du, Tzu‐Hsuan Hsu, et al.. (2009). A novel planar floating-gate (FG) / charge-trapping (CT) NAND device using BE-SONOS inter-poly dielectric (IPD). 1–4. 1 indexed citations
11.
Hsu, Tzu‐Hsuan, Hang-Ting Lue, Sheng-Chih Lai, et al.. (2009). Reliability of planar and FinFET SONOS devices for NAND flash applications - Field enhancement vs. barrier engineering. 154–155. 7 indexed citations
12.
13.
Lai, Sheng-Chih, Hang-Ting Lue, Yu‐Fong Huang, et al.. (2009). Reliability study of MANOS with and without a SiO<inf>2</inf> buffer layer and BE-MANOS charge-trapping NAND flash devices. 152–153. 6 indexed citations
14.
Lai, Sheng-Chih, Hang-Ting Lue, Yu‐Fong Huang, et al.. (2008). An Oxide-Buffered BE-MANOS Charge-Trapping Device and the Role of Al2O3. 25. 101–102. 9 indexed citations
15.
Lai, Sheng-Chih, Hang-Ting Lue, Tai‐Bor Wu, et al.. (2008). Highly Reliable MA BE-SONOS (Metal-Al<inf>2</inf>O<inf>3</inf> Bandgap Engineered SONOS) Using a SiO<inf>2</inf> Buffer Layer. 58–59. 2 indexed citations
16.
Lai, Sheng-Chih, Erh-Kun Lai, Kuang-Yeu Hsieh, et al.. (2007). A Study on the Erase and Retention Mechanisms for MONOS, MANOS, and BE-SONOS Non-Volatile Memory Devices. 1–2. 8 indexed citations
17.
Lai, Sheng-Chih, Hang-Ting Lue, Tai‐Bor Wu, et al.. (2007). Study of the Erase Mechanism of MANOS ($ \hbox{Metal/Al}_{2}\hbox{O}_{3}/\hbox{SiN/SiO}_{2}/\hbox{Si}$) Device. IEEE Electron Device Letters. 28(7). 643–645. 15 indexed citations
18.
Lue, Hang-Ting, Yi‐Hsuan Hsiao, Pei-Ying Du, et al.. (2006). A novel buried-channel FinFET BE-SONOS NAND Flash with improved memory window and cycling endurance. Symposium on VLSI Technology. 224–225. 5 indexed citations
19.
Lue, Hang-Ting, Szu-Yu Wang, Erh-Kun Lai, et al.. (2006). BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability. 547–550. 108 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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