M.-J. Tsai

1.6k citations

53 papers · 1.3k · 1 hit paper · h-index 17

Impact in

Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
Polymers and Plastics top 10%
- Transition Metal Oxide Nanomaterials

Papers in

Electrical and Electronic Engineering 44
- Semiconductor materials and devices 26
- Advanced Memory and Neural Computing 25
- Ferroelectric and Negative Capacitance Devices 20
- Advancements in Semiconductor Devices and Circuit Design 5
Materials Chemistry 19
- Silicon Nanostructures and Photoluminescence 10
- Electronic and Structural Properties of Oxides 6

Co-authors: P. J. Tzeng (13 shared papers)Tong Wu (2 shared papers)Chenhsin Lien (3 shared papers)S. Maikap (12 shared papers)Chien-Ting Lin (1 shared paper)Jer‐Ren Yang (5 shared papers)S. Z. Rahaman (8 shared papers)Chia‐Hua Lin (6 shared papers)
Journals: Applied Physics Letters (9 papers)IEEE Electron Device Letters (3 papers)Journal of Applied Physics (3 papers)Applied Surface Science (2 papers)Journal of Electronic Materials (2 papers)
Partner nations: Taiwan United States Australia

In The Last Decade

M.-J. Tsai

50 papers receiving 1.2k citations

M.-J. Tsai's Hit Papers

align trajectories log scale

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM 2008 · 505 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2008 Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Peers

Countries citing papers authored by M.-J. Tsai

Since Specialization

Citations

This map shows the geographic impact of M.-J. Tsai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.-J. Tsai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.-J. Tsai more than expected).

Fields of papers citing papers by M.-J. Tsai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.-J. Tsai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.-J. Tsai. The network helps show where M.-J. Tsai may publish in the future.

Co-authors

The 25 scholars most cited alongside M.-J. Tsai, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.-J. Tsai Line = papers co-authored together M.-J. Tsai links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 53 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM Hsuan‐Yu Lee, P. S. Chen, Tong Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, Chien-Ting Lin, F. Chen, Chenhsin Lien, M.-J. Tsai Hit paper breakdown →	2008	505
2	Charge trapping characteristics of atomic-layer-deposited HfO₂ films with Al₂O₃ as a blocking oxide for high-density non-volatile memory device applications Semiconductor Science and Technology ·S. Maikap, H. Y. Lee, T-Y Wang, P. J. Tzeng, C. C. Wang, L. S. Lee, K. C. LIU, Jer‐Ren Yang, M.-J. Tsai	2007	115
3	Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte Electrochemical and Solid-State Letters ·S. Z. Rahaman, S. Maikap, Hsien‐Chin Chiu, Changhong Lin, Tsung-Huan Wu, Y.-S. Chen, P. J. Tzeng, F. Chen, M.-J. Kao, M.-J. Tsai	2010	56
4	Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers Applied Physics Letters ·S. Maikap, T.-Y. Wang, P. J. Tzeng, C.-H. Lin, Ta–Chang Tien, L. S. Lee, Jer‐Ren Yang, M.-J. Tsai	2007	54
5	Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film Applied Physics Letters ·S. Z. Rahaman, S. Maikap, Wen‐Shan Chen, H. Y. Lee, F. T. Chen, Ming‐Jer Kao, M.-J. Tsai	2012	51
6	Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots Applied Physics Letters ·Wen‐Hao Chang, An-Tai Chou, W. Y. Chen, H.-S. Chang, T. M. Hsu, Zingway Pei, P. S. Chen, S. W. Lee, L.S. Lai, S.C. Lu, M.-J. Tsai	2003	49
7	Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament Journal of Applied Physics ·S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, Ta–Chang Tien, M.-J. Tsai	2012	47
8	Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si Applied Physics Letters ·S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, TeYu Chien, Chih‐Ta Chia	2003	46
9	Charge storage characteristics of atomic layer deposited RuOx nanocrystals Applied Physics Letters ·S. Maikap, T. Y. Wang, P. J. Tzeng, Chia‐Hua Lin, L. S. Lee, Jer‐Ren Yang, M.-J. Tsai	2007	41
10	Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer IEEE Electron Device Letters ·Ping-Hung Tsai, Kuei‐Shu Chang‐Liao, Chu-Yung Liu, Tien‐Ko Wang, P. J. Tzeng, Chia‐Hua Lin, L. S. Lee, M.-J. Tsai	2008	37
11	Threading dislocation induced low frequency noise in strained-Si nMOSFETs IEEE Electron Device Letters ·W.-C. Hua, M. H. Lee, P.S. Chen, M.-J. Tsai, C. W. Liu	2005	27
12	The effects of the growth temperature on AlxGal-xAs (0≤ x ≤0.37) LED materials grown by OM-VPE Journal of Electronic Materials ·M.-J. Tsai, M. M. Tashima, R. L. Moon	1984	22
13	Boron mediation on the growth of Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition system Materials Science and Engineering B ·P.S. Chen, Zingway Pei, Y. H. Peng, S.W. Lee, M.-J. Tsai	2004	21
14	Memory Characteristics of Atomic-Layer-Deposited High-κ HfAlO Nanocrystal Capacitors Electrochemical and Solid-State Letters ·S. Maikap, P. J. Tzeng, T.-Y. Wang, Chia‐Hua Lin, L. S. Lee, Jer‐Ren Yang, M.-J. Tsai	2008	21
15	A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric Microelectronic Engineering ·Chung-Hao Fu, Kuei‐Shu Chang‐Liao, Yu‐Wei Chang, Yen-Hua Hsu, Te-Hsuen Tzeng, T.K. Wang, Dawei Heh, P. Y. Gu, M.-J. Tsai	2011	20
16	Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator Applied Physics Letters ·P. W. Li, W. M. Liao, S. W. Lin, P. S. Chen, S.C. Lu, M.-J. Tsai	2003	20
17	Comprehensive low-frequency and RF noise characteristics in strained-Si NMOSFETs M. H. Lee, P.S. Chen, W.-C. Hua, Cui Yu, Y.T. Tseng, S. Maikap, Y.M. Hsua, C. W. Liu, S.C. Lu, W.-Y. Hsieh, M.-J. Tsai	2004	18
18	Optical and Electronic Characteristics of Germanium Quantum Dots Formed by Selective Oxidation of SiGe/Si-on-Insulator Japanese Journal of Applied Physics ·Pei-Wen Li, David M.-T. Kuo, Wei-Ming Liao, M.-J. Tsai	2004	15
19	Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device Applied Physics Letters ·Ping‐Hung Tsai, Kuei-Shu Chang-Liao, Dong-Wei Yang, Yuan-Bin Chung, Tien-Ko Wang, P. J. Tzeng, Chia‐Hua Lin, L. S. Lee, M.-J. Tsai, Albert Chin	2008	11
20	The evolution of electroluminescence in Ge quantum-dot diodes with the fold number Applied Physics Letters ·Y. H. Peng, Chih-Hsiung Hsu, Chieh-Hsiung Kuan, C. W. Liu, Peili CHEN, M.-J. Tsai, Y. W. Suen	2004	11

About M.-J. Tsai

M.-J. Tsai is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Polymers and Plastics and Condensed Matter Physics, having authored 53 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (26 papers), Advanced Memory and Neural Computing (25 papers), Ferroelectric and Negative Capacitance Devices (20 papers), Semiconductor Quantum Structures and Devices (12 papers), Silicon Nanostructures and Photoluminescence (10 papers), Transition Metal Oxide Nanomaterials (6 papers), Electronic and Structural Properties of Oxides (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.2k citations), Polymers and Plastics (158 citations), Materials Chemistry (415 citations), Cellular and Molecular Neuroscience (127 citations) and Atomic and Molecular Physics, and Optics (206 citations). M.-J. Tsai has collaborated with scholars based in Taiwan, United States and Australia. Frequent co-authors include P. J. Tzeng, Tong Wu, Chenhsin Lien, S. Maikap, Chien-Ting Lin, Jer‐Ren Yang, S. Z. Rahaman, Chia‐Hua Lin, Ta–Chang Tien and Zingway Pei. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics, Applied Surface Science and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

M.-J. Tsai

Impact in

Papers in i

In The Last Decade

M.-J. Tsai

M.-J. Tsai's Hit Papers

Peers

Countries citing papers authored by M.-J. Tsai

Fields of papers citing papers by M.-J. Tsai

All Works

About M.-J. Tsai

Explore authors with similar magnitude of impact

Papers in