M.-J. Tsai

1.6k total citations · 1 hit paper
53 papers, 1.3k citations indexed

About

M.-J. Tsai is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M.-J. Tsai has authored 53 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M.-J. Tsai's work include Semiconductor materials and devices (26 papers), Advanced Memory and Neural Computing (25 papers) and Ferroelectric and Negative Capacitance Devices (20 papers). M.-J. Tsai is often cited by papers focused on Semiconductor materials and devices (26 papers), Advanced Memory and Neural Computing (25 papers) and Ferroelectric and Negative Capacitance Devices (20 papers). M.-J. Tsai collaborates with scholars based in Taiwan, United States and Australia. M.-J. Tsai's co-authors include P. J. Tzeng, S. Maikap, Chien-Ting Lin, Chenhsin Lien, Tong Wu, Jer‐Ren Yang, S. Z. Rahaman, Chia‐Hua Lin, Ta–Chang Tien and Zingway Pei and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

M.-J. Tsai

50 papers receiving 1.2k citations

Hit Papers

Low power and high speed bipolar switching with a thin re... 2008 2026 2014 2020 2008 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.-J. Tsai Taiwan 17 1.2k 415 206 158 127 53 1.3k
Mirko Fraschke Germany 13 864 0.7× 332 0.8× 205 1.0× 72 0.5× 110 0.9× 43 1.1k
H. Grampeix France 19 1.0k 0.9× 297 0.7× 140 0.7× 68 0.4× 83 0.7× 62 1.1k
Yao‐Jen Lee Taiwan 22 1.6k 1.4× 557 1.3× 159 0.8× 186 1.2× 127 1.0× 137 1.8k
M.‐J. Tsai Taiwan 12 962 0.8× 305 0.7× 57 0.3× 131 0.8× 116 0.9× 43 1000
Congyan Lu China 18 841 0.7× 302 0.7× 53 0.3× 162 1.0× 151 1.2× 63 927
Erh-Kun Lai Taiwan 21 1.5k 1.2× 727 1.8× 61 0.3× 292 1.8× 92 0.7× 91 1.6k
M. Aoki Japan 15 858 0.7× 275 0.7× 210 1.0× 226 1.4× 99 0.8× 43 953
D.S.H. Chan Singapore 19 1.1k 0.9× 404 1.0× 180 0.9× 171 1.1× 39 0.3× 70 1.3k
Chikako Yoshida Japan 12 648 0.5× 244 0.6× 228 1.1× 168 1.1× 99 0.8× 45 785
Songman Ju China 11 528 0.4× 371 0.9× 63 0.3× 120 0.8× 112 0.9× 16 674

Countries citing papers authored by M.-J. Tsai

Since Specialization
Citations

This map shows the geographic impact of M.-J. Tsai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.-J. Tsai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.-J. Tsai more than expected).

Fields of papers citing papers by M.-J. Tsai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.-J. Tsai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.-J. Tsai. The network helps show where M.-J. Tsai may publish in the future.

Co-authorship network of co-authors of M.-J. Tsai

This figure shows the co-authorship network connecting the top 25 collaborators of M.-J. Tsai. A scholar is included among the top collaborators of M.-J. Tsai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.-J. Tsai. M.-J. Tsai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsai, M.-J. & Leonard Kleinrock. (2025). Computer network optimization using the power metric for multiple flows: Part I. Computer Networks. 263. 111153–111153.
2.
Lien, Chenhsin, Y. S. Chen, H. Y. Lee, et al.. (2014). Overview and high density application of HfOx based RRAM. 60. 1–4. 3 indexed citations
3.
Rahaman, S. Z., et al.. (2012). Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament. Journal of Applied Physics. 111(6). 47 indexed citations
5.
Das, Atanu, S. Maikap, Chia‐Hua Lin, et al.. (2009). Ruthenium oxide metal nanocrystal capacitors with high-κ dielectric tunneling barriers for nanoscale nonvolatile memory device applications. Microelectronic Engineering. 87(10). 1821–1827. 3 indexed citations
6.
Tzeng, P. J., et al.. (2008). Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device. Applied Physics Letters. 93(25). 11 indexed citations
7.
Maikap, S., S. Z. Rahaman, Writam Banerjee, et al.. (2008). Enhanced flash memory device characteristics using ALD TiN/Al<inf>2</inf>O<inf>3</inf> nanolaminate charge storage layers. 91. 958–961. 1 indexed citations
8.
Maikap, S., et al.. (2007). Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers. Applied Physics Letters. 90(26). 54 indexed citations
9.
Maikap, S., et al.. (2007). Charge storage characteristics of atomic layer deposited RuOx nanocrystals. Applied Physics Letters. 90(25). 41 indexed citations
10.
Lee, M. H., Cui Yu, S. Maikap, et al.. (2004). Comprehensive low-frequency and RF noise characteristics in strained-Si NMOSFETs. 3.6.1–3.6.4. 18 indexed citations
11.
Li, Pei-Wen, et al.. (2004). Optical and Electronic Characteristics of Germanium Quantum Dots Formed by Selective Oxidation of SiGe/Si-on-Insulator. Japanese Journal of Applied Physics. 43(11A). 7788–7792. 15 indexed citations
12.
Pei, Zingway, et al.. (2003). Room temperature 1.3 and 1.5 μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers. Applied Surface Science. 224(1-4). 165–169. 2 indexed citations
13.
Pei, Zingway, et al.. (2003). Si1−xGex/Si multi-quantum well phototransistor for near-infrared operation. Physica E Low-dimensional Systems and Nanostructures. 16(3-4). 554–557. 5 indexed citations
15.
Tsai, M.-J., et al.. (2003). Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si. Applied Physics Letters. 83(25). 5283–5285. 46 indexed citations
16.
Tsai, M.-J., et al.. (2003). Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments. Applied Surface Science. 224(1-4). 152–155. 5 indexed citations
17.
Chang, Wen‐Hao, et al.. (2003). Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots. Applied Physics Letters. 83(14). 2958–2960. 49 indexed citations
18.
Liu, Ru‐Shi, P.P. Edwards, S.F. Hu, et al.. (1993). The chemical control of high-Tc superconductivity: Metal-superconductor-insulator transition in (Tl1−yPby)Sr2(Ca1−xYx)Cu2O7. Journal of Electronic Materials. 22(10). 1199–1203. 1 indexed citations
19.
Tsai, M.-J., S.F. Wu, Sheng-Hua Lu, & Yu‐Ting Huang. (1992). Annealing Effects on Tc in the Tl-Ca-Ba-Cu-O System. MRS Proceedings. 275. 1 indexed citations
20.
Tsai, M.-J., M. M. Tashima, & R. L. Moon. (1984). The effects of the growth temperature on AlxGal-xAs (0≤ x ≤0.37) LED materials grown by OM-VPE. Journal of Electronic Materials. 13(2). 437–446. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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