Writam Banerjee

3.6k total citations · 1 hit paper
68 papers, 3.1k citations indexed

About

Writam Banerjee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Writam Banerjee has authored 68 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 67 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 14 papers in Cellular and Molecular Neuroscience. Recurrent topics in Writam Banerjee's work include Advanced Memory and Neural Computing (57 papers), Ferroelectric and Negative Capacitance Devices (45 papers) and Semiconductor materials and devices (24 papers). Writam Banerjee is often cited by papers focused on Advanced Memory and Neural Computing (57 papers), Ferroelectric and Negative Capacitance Devices (45 papers) and Semiconductor materials and devices (24 papers). Writam Banerjee collaborates with scholars based in China, South Korea and Taiwan. Writam Banerjee's co-authors include Qi Liu, Ming Liu, Hangbing Lv, Hyunsang Hwang, Shibing Long, S. Maikap, Xiaoxin Xu, Nianduan Lu, Alireza Kashir and S. Kamba and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Writam Banerjee

68 papers receiving 3.0k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

2022 167 citations Writam Banerjee et al. Small profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Writam Banerjee China	34	2.9k	959	740	721	185	68	3.1k
Kyung Jean Yoon South Korea	28	2.5k 0.8×	1.0k 1.0×	519 0.7×	639 0.9×	190 1.0×	48	2.6k
L. Perniola France	29	2.9k 1.0×	707 0.7×	855 1.2×	407 0.6×	266 1.4×	138	3.0k
Jung Ho Yoon South Korea	30	3.3k 1.1×	1.4k 1.5×	680 0.9×	810 1.1×	320 1.7×	70	3.4k
H.-S. Philip Wong United States	7	3.1k 1.1×	1.0k 1.1×	577 0.8×	551 0.8×	248 1.3×	11	3.3k
Stefan Tappertzhofen Germany	23	2.8k 1.0×	1.3k 1.4×	504 0.7×	771 1.1×	262 1.4×	51	3.0k
Byoungil Lee United States	12	3.6k 1.2×	1.2k 1.2×	758 1.0×	709 1.0×	271 1.5×	19	3.7k
Chang Bum Lee South Korea	13	2.9k 1.0×	890 0.9×	671 0.9×	838 1.2×	137 0.7×	18	3.0k
E. Miranda Spain	35	4.6k 1.6×	1.2k 1.2×	986 1.3×	531 0.7×	291 1.6×	282	4.7k
L. Goux Belgium	32	3.2k 1.1×	651 0.7×	1.1k 1.5×	655 0.9×	94 0.5×	149	3.4k
Rohit Abraham John Singapore	31	2.7k 0.9×	791 0.8×	980 1.3×	833 1.2×	239 1.3×	44	3.1k

Countries citing papers authored by Writam Banerjee

Since Specialization

Citations

This map shows the geographic impact of Writam Banerjee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Writam Banerjee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Writam Banerjee more than expected).

Fields of papers citing papers by Writam Banerjee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Writam Banerjee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Writam Banerjee. The network helps show where Writam Banerjee may publish in the future.

Co-authorship network of co-authors of Writam Banerjee

This figure shows the co-authorship network connecting the top 25 collaborators of Writam Banerjee. A scholar is included among the top collaborators of Writam Banerjee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Writam Banerjee. Writam Banerjee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lee, Seungwoo, Writam Banerjee, Sangmin Lee, Changhyuck Sung, & Hyunsang Hwang. (2021). Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO₂ Layer. Advanced Electronic Materials. 7(2). 18 indexed citations

Banerjee, Writam, Qi Liu, & Hyunsang Hwang. (2020). Engineering of defects in resistive random access memory devices. Journal of Applied Physics. 127(5). 79 indexed citations

Maikap, S. & Writam Banerjee. (2020). In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices. Advanced Electronic Materials. 6(6). 37 indexed citations

Banerjee, Writam, I. V. Karpov, Ashish Agrawal, et al.. (2020). Highly-stable (< 3% fluctuation) Ag-based Threshold Switch with Extreme-low OFF Current of 0.1 pA, Extreme-high Selectivity of 10⁹ and High Endurance of 10⁹ Cycles. 28.4.1–28.4.4. 14 indexed citations

Nikam, Revannath Dnyandeo, et al.. (2019). Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity. Scientific Reports. 9(1). 18883–18883. 113 indexed citations

Li, Linan, Wei Wang, Ling Li, et al.. (2019). A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism. Microelectronics Journal. 86. 1–6. 1 indexed citations

Banerjee, Writam, Nianduan Lu, Yang Yang, et al.. (2018). Investigation of Retention Behavior of TiO_x/Al₂O₃ Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule. IEEE Transactions on Electron Devices. 65(3). 957–962. 7 indexed citations

Banerjee, Writam, Facai Wu, Y. Hu, et al.. (2018). Origin of negative resistance in anion migration controlled resistive memory. Applied Physics Letters. 112(13). 5 indexed citations

Zhao, Xiaolong, Sen Liu, Jiebin Niu, et al.. (2017). Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer. Small. 13(35). 157 indexed citations

10.

Banerjee, Writam, Qi Liu, Shibing Long, Hangbing Lv, & Ming Liu. (2017). Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory. Journal of Physics D Applied Physics. 50(30). 303002–303002. 34 indexed citations

11.

Banerjee, Writam, Xiaolong Zhao, Qi Liu, et al.. (2017). Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO₂/Pt RRAM. Nanoscale. 9(47). 18908–18917. 42 indexed citations

12.

Liu, Sen, Nianduan Lu, Xiaolong Zhao, et al.. (2016). Memory Devices: Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory (Adv. Mater. 48/2016). Advanced Materials. 28(48). 10809–10809. 7 indexed citations

13.

Lv, Hangbing, Xiaoxin Xu, Hongtao Liu, et al.. (2015). Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory. Scientific Reports. 5(1). 7764–7764. 123 indexed citations

14.

Lv, Hangbing, Xiaoxin Xu, Pengxiao Sun, et al.. (2015). Atomic View of Filament Growth in Electrochemical Memristive Elements. Scientific Reports. 5(1). 13311–13311. 69 indexed citations

15.

Luo, Qing, Xiaoxin Xu, Hongtao Liu, et al.. (2015). Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (∼pA) and high endurance (>1010). 10.4.1–10.4.4. 53 indexed citations

16.

Prakash, Amit, S. Maikap, Writam Banerjee, Debanjan Jana, & Chao‐Sung Lai. (2013). Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials. Nanoscale Research Letters. 8(1). 379–379. 23 indexed citations

17.

Gogurla, Narendar, Suvra Prakash Mondal, Arun Kumar Sinha, et al.. (2013). Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix. Nanotechnology. 24(34). 345202–345202. 112 indexed citations

18.

Banerjee, Writam, S. Z. Rahaman, & S. Maikap. (2012). Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrO_x/AlO_x/W Cross-Point. Japanese Journal of Applied Physics. 51(4S). 04DD10–04DD10. 13 indexed citations

19.

Banerjee, Writam, S. Z. Rahaman, Amit Prakash, & S. Maikap. (2011). High-κ Al₂O₃/WO_xBilayer Dielectrics for Low-Power Resistive Switching Memory Applications. Japanese Journal of Applied Physics. 50(10S). 10PH01–10PH01. 9 indexed citations

20.

Banerjee, Writam, et al.. (2011). Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device. MATERIALS TRANSACTIONS. 52(3). 331–335. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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