M.-J. Kao

459 total citations
32 papers, 345 citations indexed

About

M.-J. Kao is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Polymers and Plastics. According to data from OpenAlex, M.-J. Kao has authored 32 papers receiving a total of 345 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 9 papers in Polymers and Plastics. Recurrent topics in M.-J. Kao's work include Advanced Memory and Neural Computing (11 papers), Semiconductor Quantum Structures and Devices (10 papers) and Transition Metal Oxide Nanomaterials (9 papers). M.-J. Kao is often cited by papers focused on Advanced Memory and Neural Computing (11 papers), Semiconductor Quantum Structures and Devices (10 papers) and Transition Metal Oxide Nanomaterials (9 papers). M.-J. Kao collaborates with scholars based in Taiwan, United States and China. M.-J. Kao's co-authors include Ching Song Jwo, Tsing-Tshih Tsung, Ho Chang, H. M. Lin, C. H. Lo, Kuan-Hung Huang, S. Maikap, Yuh‐Yih Wu, De‐Xing Peng and W. C. Hsu and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Alloys and Compounds.

In The Last Decade

M.-J. Kao

32 papers receiving 333 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.-J. Kao Taiwan 10 189 95 90 80 70 32 345
Menelaos Tsigkourakos Belgium 11 210 1.1× 70 0.7× 44 0.5× 192 2.4× 72 1.0× 23 364
E. Aschauer Austria 11 176 0.9× 91 1.0× 52 0.6× 59 0.7× 29 0.4× 20 331
Alexander Yoffe Israel 10 113 0.6× 126 1.3× 46 0.5× 109 1.4× 48 0.7× 16 337
O. I. Il’in Russia 13 183 1.0× 188 2.0× 34 0.4× 228 2.9× 70 1.0× 55 433
Bo Ram Kang South Korea 10 190 1.0× 136 1.4× 73 0.8× 310 3.9× 51 0.7× 22 433
Rhonira Latif Malaysia 11 114 0.6× 138 1.5× 56 0.6× 68 0.8× 30 0.4× 30 286
Xugang Xiong United States 11 190 1.0× 187 2.0× 44 0.5× 160 2.0× 82 1.2× 18 367
Eui‐Jung Yun South Korea 13 317 1.7× 45 0.5× 40 0.4× 284 3.5× 67 1.0× 70 471
Dheemahi Rao India 12 132 0.7× 54 0.6× 31 0.3× 259 3.2× 39 0.6× 26 362
Jinlong Tang China 11 103 0.5× 79 0.8× 28 0.3× 174 2.2× 21 0.3× 23 334

Countries citing papers authored by M.-J. Kao

Since Specialization
Citations

This map shows the geographic impact of M.-J. Kao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.-J. Kao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.-J. Kao more than expected).

Fields of papers citing papers by M.-J. Kao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.-J. Kao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.-J. Kao. The network helps show where M.-J. Kao may publish in the future.

Co-authorship network of co-authors of M.-J. Kao

This figure shows the co-authorship network connecting the top 25 collaborators of M.-J. Kao. A scholar is included among the top collaborators of M.-J. Kao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.-J. Kao. M.-J. Kao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Prakash, Amit, S. Maikap, Chao‐Sung Lai, et al.. (2012). Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure. Japanese Journal of Applied Physics. 51(4S). 04DD06–04DD06. 9 indexed citations
2.
Prakash, Amit, S. Maikap, Chao‐Sung Lai, et al.. (2012). Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure. Japanese Journal of Applied Physics. 51(4S). 04DD06–04DD06. 13 indexed citations
3.
Prakash, Amit, et al.. (2010). Improved Bipolar Resistive Switching Memory Using W/TaO<sub>x</sub>/W Structure. Advanced materials research. 159. 333–337. 5 indexed citations
4.
Rahaman, S. Z., S. Maikap, Hsien‐Chin Chiu, et al.. (2010). Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte. Electrochemical and Solid-State Letters. 13(5). H159–H159. 56 indexed citations
5.
Rahaman, S. Z., S. Maikap, Chen-Hsi Lin, et al.. (2009). Low current and voltage resistive switching memory device using novel Cu/Ta<inf>2</inf>O<inf>5</inf>/W structure. 331. 33–34. 2 indexed citations
6.
Rahaman, S. Z., S. Maikap, Hsien‐Chin Chiu, et al.. (2009). Low Power Operation of Resistive Switching Memory Device Using Novel W/Ge0.4Se0.6/Cu/Al Structure. 21. 1–4. 5 indexed citations
7.
Chang, Ho, et al.. (2009). Tribological property of TiO2 nanolubricant on piston and cylinder surfaces. Journal of Alloys and Compounds. 495(2). 481–484. 52 indexed citations
8.
Chang, Ho, et al.. (2007). A study of process optimization using the combined submerged arc nanoparticle synthesis system for preparing TiO2 nanoparticle suspension. Journal of Alloys and Compounds. 434-435. 668–671. 3 indexed citations
10.
Yang, Shao‐Yu, et al.. (2006). Improvement of Switching Field in Magnetic Tunneling Junction Using Ru/Ta Capping Layer. IEEE Transactions on Magnetics. 42(10). 2748–2750. 1 indexed citations
11.
Kao, M.-J., Ho Chang, Tsing-Tshih Tsung, & H. M. Lin. (2006). The Friction of Vehicle Brake Tandem Master Cylinder. Journal of Physics Conference Series. 48. 663–666. 2 indexed citations
12.
Kao, M.-J., Der‐Chi Tien, Ching Song Jwo, & Tsing-Tshih Tsung. (2005). The study of hydrophilic characteristics of ethylene glycol. Journal of Physics Conference Series. 13. 442–445. 15 indexed citations
13.
Lin, Wei‐Chun, Chuan‐Mu Chen, Chen‐Jen Hung, et al.. (2005). Magnetic tunneling junction device model for circuit simulation. 78–81. 5 indexed citations
15.
Kao, M.-J., et al.. (2004). Low writing current magnetoresistive random access memory (MRAM) with side metal pillar write word line (PWWL). Journal of Magnetism and Magnetic Materials. 282. 373–379. 7 indexed citations
16.
Kao, M.-J., et al.. (1999). Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel. Materials Chemistry and Physics. 61(3). 266–269. 3 indexed citations
17.
Lo, Ikai, M.-J. Kao, Yeong‐Chan Chang, et al.. (1996). Photoinduced electron coupling in δ-doped GaAs/In0.18Ga0.82As quantum wells. Physical review. B, Condensed matter. 54(7). 4774–4779. 12 indexed citations
18.
Kao, M.-J., et al.. (1996). Study of Zinc-Delta-Doped Strained Quantum Well InGaAs/GaAs p-Channel Heterostructure Field-Effect Transistors. Japanese Journal of Applied Physics. 35(4R). 2085–2085. 4 indexed citations
19.
Kao, M.-J., et al.. (1995). Characteristics of graded-like multiple-delta-doped GaAs field effect transistors. Applied Physics Letters. 66(19). 2505–2506. 11 indexed citations
20.
Kao, M.-J., et al.. (1995). Improved mobilities and concentrations in double quantum well pseudomorphic HFETs using multi-coupled δ-doped GaAs. Solid-State Electronics. 38(6). 1171–1173. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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