Yoshitomo Hatakeyama

402 total citations
9 papers, 356 citations indexed

About

Yoshitomo Hatakeyama is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yoshitomo Hatakeyama has authored 9 papers receiving a total of 356 indexed citations (citations by other indexed papers that have themselves been cited), including 7 papers in Condensed Matter Physics, 5 papers in Electrical and Electronic Engineering and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yoshitomo Hatakeyama's work include GaN-based semiconductor devices and materials (7 papers), Silicon Carbide Semiconductor Technologies (5 papers) and Semiconductor materials and devices (4 papers). Yoshitomo Hatakeyama is often cited by papers focused on GaN-based semiconductor devices and materials (7 papers), Silicon Carbide Semiconductor Technologies (5 papers) and Semiconductor materials and devices (4 papers). Yoshitomo Hatakeyama collaborates with scholars based in Japan and United States. Yoshitomo Hatakeyama's co-authors include Kazuki Nomoto, Naoki Kaneda, Tohru Nakamura, Tomoyoshi Mishima, Toshihiro Kawano, Akihisa Terano, Hideki YANAOKA, Kazuhiro Mochizuki, Taku Tsuchiya and Ryuta Tsuchiya and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Physics of Fluids.

In The Last Decade

Yoshitomo Hatakeyama

9 papers receiving 336 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yoshitomo Hatakeyama Japan 7 340 291 154 72 40 9 356
S. C. Foo Singapore 9 328 1.0× 301 1.0× 180 1.2× 62 0.9× 74 1.9× 11 369
Ming Tao China 10 258 0.8× 242 0.8× 141 0.9× 69 1.0× 80 2.0× 18 328
Geetak Gupta United States 11 231 0.7× 216 0.7× 100 0.6× 91 1.3× 67 1.7× 25 290
Shichuang Sun China 8 328 1.0× 248 0.9× 220 1.4× 47 0.7× 108 2.7× 18 365
R. Li United States 7 307 0.9× 265 0.9× 114 0.7× 98 1.4× 68 1.7× 12 362
Erdem Arkun United States 11 279 0.8× 284 1.0× 114 0.7× 101 1.4× 77 1.9× 27 370
Markus Cäsar Germany 10 415 1.2× 371 1.3× 143 0.9× 58 0.8× 65 1.6× 17 430
G. Curatola Italy 13 381 1.1× 552 1.9× 156 1.0× 126 1.8× 89 2.2× 35 649
Tsutomu Ina Japan 4 524 1.5× 471 1.6× 221 1.4× 65 0.9× 89 2.2× 6 554
Hideyuki Okita Japan 6 383 1.1× 328 1.1× 150 1.0× 56 0.8× 55 1.4× 9 401

Countries citing papers authored by Yoshitomo Hatakeyama

Since Specialization
Citations

This map shows the geographic impact of Yoshitomo Hatakeyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshitomo Hatakeyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshitomo Hatakeyama more than expected).

Fields of papers citing papers by Yoshitomo Hatakeyama

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshitomo Hatakeyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshitomo Hatakeyama. The network helps show where Yoshitomo Hatakeyama may publish in the future.

Co-authorship network of co-authors of Yoshitomo Hatakeyama

This figure shows the co-authorship network connecting the top 25 collaborators of Yoshitomo Hatakeyama. A scholar is included among the top collaborators of Yoshitomo Hatakeyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yoshitomo Hatakeyama. Yoshitomo Hatakeyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

9 of 9 papers shown
1.
YANAOKA, Hideki & Yoshitomo Hatakeyama. (2023). Numerical simulation for axis switching of pulsating jet issued from rectangular nozzle at low Reynolds number. Physics of Fluids. 35(12). 5 indexed citations
2.
Mochizuki, Kazuhiro, Tomoyoshi Mishima, Yoshitomo Hatakeyama, et al.. (2014). A Proposal to Apply Effective Acceptor Level for Representing Increased Ionization Ratio of Mg Acceptors in Extrinsically Photon-Recycled GaN. Materials science forum. 778-780. 1189–1192. 1 indexed citations
3.
Mochizuki, Kazuhiro, Tomoyoshi Mishima, Yoshitomo Hatakeyama, et al.. (2013). Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p–n Junction Epitaxial Layers. Japanese Journal of Applied Physics. 52(8S). 08JN22–08JN22. 15 indexed citations
4.
Hatakeyama, Yoshitomo, Kazuki Nomoto, Akihisa Terano, et al.. (2013). High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process. Japanese Journal of Applied Physics. 52(2R). 28007–28007. 100 indexed citations
5.
Mochizuki, Kazuhiro, Kazuki Nomoto, Yoshitomo Hatakeyama, et al.. (2012). Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates. IEEE Transactions on Electron Devices. 59(4). 1091–1098. 13 indexed citations
6.
Mochizuki, Kazuhiro, Kazuki Nomoto, Yoshitomo Hatakeyama, et al.. (2011). Photon-recycling GaN p-n diodes demonstrating temperature-independent, extremely low on-resistance. 26.3.1–26.3.4. 12 indexed citations
7.
Nomoto, Kazuki, et al.. (2011). Over 1.0 kV GaN p–n junction diodes on free‐standing GaN substrates. physica status solidi (a). 208(7). 1535–1537. 79 indexed citations
8.
Nomoto, Kazuki, et al.. (2011). フリースタンディングGaN基板上の1.0kV以上に耐えられるGaN p‐n接合ダイオード. 208(7). 1535–1537. 19 indexed citations
9.
Hatakeyama, Yoshitomo, Kazuki Nomoto, Naoki Kaneda, et al.. (2011). Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates. IEEE Electron Device Letters. 32(12). 1674–1676. 112 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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