Yoshitomo Hatakeyama

9 papers receiving 336 citations

Peers

Yoshitomo Hatakeyama
Comparison fields: 5 of 12
  • Condensed Matter Physics 340
  • Electrical and Electronic Engineering 291
  • Electronic, Optical and Magnetic Materials 154
  • Atomic and Molecular Physics, and Optics 72
  • Materials Chemistry 40
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Countries citing papers authored by Yoshitomo Hatakeyama

Since Specialization
Citations

This map shows the geographic impact of Yoshitomo Hatakeyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshitomo Hatakeyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshitomo Hatakeyama more than expected).

Fields of papers citing papers by Yoshitomo Hatakeyama

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshitomo Hatakeyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshitomo Hatakeyama. The network helps show where Yoshitomo Hatakeyama may publish in the future.

Co-authorship network of co-authors of Yoshitomo Hatakeyama

This figure shows the co-authorship network connecting the top 25 collaborators of Yoshitomo Hatakeyama. A scholar is included among the top collaborators of Yoshitomo Hatakeyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yoshitomo Hatakeyama. Yoshitomo Hatakeyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

9 of 9 papers shown
#WorkIndexed citations
1 5
2 1
3 15
4 100
5 13
6 12
7 79
8 112
9
フリースタンディングGaN基板上の1.0kV以上に耐えられるGaN p‐n接合ダイオード
19

About Yoshitomo Hatakeyama

Yoshitomo Hatakeyama is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 9 papers that have together received 356 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (7 papers), Silicon Carbide Semiconductor Technologies (5 papers) and Semiconductor materials and devices (4 papers). The work is most often cited by research in Condensed Matter Physics (340 citations), Electronic, Optical and Magnetic Materials (154 citations) and Electrical and Electronic Engineering (291 citations). Yoshitomo Hatakeyama has collaborated with scholars based in Japan and United States. Frequent co-authors include Kazuki Nomoto, Tohru Nakamura, Naoki Kaneda, Tomoyoshi Mishima, Toshihiro Kawano, Akihisa Terano, Kazuhiro Mochizuki, Hideki YANAOKA, Ryuta Tsuchiya and Takashi Ishigaki. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Physics of Fluids.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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